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公开(公告)号：US20200091393A1
公开(公告)日：2020-03-19
申请号：US16691495
申请日：2019-11-21
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Su Bin BAE , Yu Gwang JEONG , Shin Il CHOI , Joon Geol LEE , Sang Gab KIM
IPC: H01L33/62 , H01L33/00 , H01L21/306
Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
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公开(公告)号：US20200058727A1
公开(公告)日：2020-02-20
申请号：US16521394
申请日：2019-07-24
Inventor： Sang Gab KIM , Hyun Min CHO , Tae Sung KIM , Yu-Gwang JEONG , Su Bin BAE , Jin Seock KIM , Sang Gyun KIM , Hyo Min KO , Kil Won CHO , Han Sol LEE
IPC: H01L27/32
Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US20140175424A1
公开(公告)日：2014-06-26
申请号：US13915342
申请日：2013-06-11
Applicant: Samsung Display Co., Ltd.
Inventor： Shin Il CHOI , Sang Gab KIM , Hyang-Shik KONG , Su Bin BAE , Yu-Gwang JEONG
IPC: H01L33/00
CPC classification number: H01L21/77 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/7869
Abstract: A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer.
Abstract translation: 薄膜晶体管阵列面板包括：衬底，位于衬底上并包括栅电极的栅极线，位于衬底上并包括氧化物半导体的半导体层，位于衬底上的数据线层，包括数据线 穿过栅极线，连接到数据线的源电极和面对源电极的漏电极和覆盖数据线层的覆盖层，其中封盖层的端部向内凹入，与顶端 数据线层。
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公开(公告)号：US20240016012A1
公开(公告)日：2024-01-11
申请号：US18321621
申请日：2023-05-22
Applicant: Samsung Display Co., LTD.
Inventor： DAWOON JUNG , Yu-Gwang JEONG , Su Bin BAE , Tae Wook KANG
IPC: H10K59/131 , H10K59/12 , H10K59/124
CPC classification number: H10K59/131 , H10K59/1201 , H10K59/124
Abstract: A display device includes: a substrate; a semiconductor on the substrate; a first gate insulating layer on the semiconductor; a gate electrode on the first gate insulating layer, and overlapping with the semiconductor; a signal line spaced from the gate electrode; a sacrificial layer on the signal line, and including an amorphous silicon material; an interlayer insulating layer on the gate electrode and the sacrificial layer; a source electrode on the interlayer insulating layer, and connected to a first region of the semiconductor; a drain electrode on the interlayer insulating layer, and connected to a second region of the semiconductor; and a connecting member on the interlayer insulating layer, and connected to the signal line.
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25.发明申请公开(公告)号：US20220229322A1
公开(公告)日：2022-07-21
申请号：US17713715
申请日：2022-04-05
Applicant: Samsung Display Co., LTD.
Inventor： Seon-Il KIM , Sung Won CHO , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG , Dae Won CHOI
IPC: G02F1/1368 , G02F1/1362 , H01L51/56 , H01L51/52 , H01L27/32
Abstract: A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.
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Patent Agency Ranking
公开(公告)号：US20210399177A1
公开(公告)日：2021-12-23
申请号：US17188783
申请日：2021-03-01
Applicant: Samsung Display Co., Ltd.
Inventor： Su Bin BAE , Yun Jong YEO , Jung Yun JO
Abstract: A display device includes a substrate; a first circuit part and a second circuit part on the substrate and spaced from each other in a first direction; and an emission part between the first circuit part and the second circuit part, the emission part being located between the first circuit part and the second circuit part in a direction parallel to the substrate, wherein the first circuit part includes a first electrode extending to the emission part, wherein the second circuit part includes a second electrode extending to the emission part, and wherein the emission part includes a light emitting element located between the first electrode and the second electrode.
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公开(公告)号：US20210384287A1
公开(公告)日：2021-12-09
申请号：US17445471
申请日：2021-08-19
Inventor： Sang Gab KIM , Hyun Min CHO , Tae Sung KIM , Yu-Gwang JEONG , Su Bin BAE , Jin Seock KIM , Sang Gyun KIM , Hyo Min KO , Kil Won CHO , Hansol LEE
IPC: H01L27/32
Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US20190172819A1
公开(公告)日：2019-06-06
申请号：US16027960
申请日：2018-07-05
Applicant: Samsung Display Co., Ltd.
Inventor： Su Bin BAE , Yu Gwang JEONG , Shin Il CHOI , Joon Geol LEE , Sang Gab KIM
Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
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公开(公告)号：US20170317104A1
公开(公告)日：2017-11-02
申请号：US15380596
申请日：2016-12-15
Applicant: Samsung Display Co., Ltd.
Inventor： Yu-Gwang JEONG , Hyun Min CHO , Su Bin BAE , Shin II CHOI , Sang Gab KIM
IPC: H01L27/12 , H01L21/311 , H01L27/32 , G02F1/1368
CPC classification number: H01L27/124 , G02F1/1368 , G02F2201/123 , H01L21/31116 , H01L21/31144 , H01L27/1218 , H01L27/1288 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/41733
Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.
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公开(公告)号：US20140183535A1
公开(公告)日：2014-07-03
申请号：US13875722
申请日：2013-05-02
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Shin Il CHOI , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG
IPC: H01L27/12
CPC classification number: H01L27/124 , H01L27/1248 , H01L27/322 , H01L27/3248
Abstract: A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate, a gate line disposed on the substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the semiconductor and including a source electrode, a drain electrode disposed on the semiconductor and opposite to the source electrode, a color filter disposed on the gate insulating layer, the data line and the drain electrode, an overcoat disposed on the color filter and including an inorganic material, a contact hole defined in the color filter and the overcoat, where the contact hole exposes the drain electrode, and a pixel electrode disposed on the overcoat and connected through the contact hole to the drain electrode, in which a plane shape of the contact hole in the overcoat and a plane shape of the contact hole in the color filter are substantially the same as each other.
Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：衬底，设置在衬底上并包括栅电极的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体 ，设置在半导体上的数据线，包括源电极，设置在半导体上并与源电极相对的漏电极，布置在栅绝缘层上的滤色器，数据线和漏电极， 所述滤色器包括无机材料，所述滤色器中限定的接触孔和所述外涂层，其中所述接触孔暴露于所述漏电极，以及设置在所述外涂层上并通过所述接触孔连接到所述漏电极的像素电极， 外涂层中的接触孔的平面形状和滤色器中的接触孔的平面形状基本上与每个 r。
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