公开(公告)号：US20230115743A1

公开(公告)日：2023-04-13

申请号：US17834987

申请日：2022-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Hyunho PARK ,  Minchan GWAK ,  Seon-Bae KIM ,  Jinyoung PARK

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.

公开(公告)号：US20230047343A1

公开(公告)日：2023-02-16

申请号：US17734473

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Minchan GWAK ,  Seonbae KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L23/535 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes active regions extending in a first direction on a substrate; a gate electrode intersecting the active regions on the substrate, extending in a second direction, and including a contact region protruding upwardly; and an interconnection line on the gate electrode and connected to the contact region, wherein the contact region includes a lower region having a first width in the second direction and an upper region located on the lower region and having a second width smaller than the first width in the second direction, and wherein at least one side surface of the contact region in the second direction has a point at which an inclination or a curvature is changed between the lower region and the upper region.

公开(公告)号：US20190320050A1

公开(公告)日：2019-10-17

申请号：US16387059

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho LIM ,  Seungjae BAE ,  Yonghwa KIM ,  Jinyoung PARK ,  Bokyung SIM ,  Byounguk YOON

IPC: H04M1/03 ,  H04R1/02 ,  H04R1/32

Abstract: A conduit structure of an electronic device and an electronic device are provided. The conduit structure includes an inner structure including a front surface and a rear surface, wherein the front surface includes a first region configured to receive a display and a second region, which is a remaining area of the front surface of the inner structure; a receiver hole configured to penetrate the second region and to connect a receiver receiving space and an external space of the inner structure; a first through-hole configured to penetrate the first region and to connect the receiver receiving space and the front surface of the inner structure; a second through-hole, which is spaced apart from the first through-hole, configured to penetrate the first region and to connect the rear surface of the inner structure; and a flow path configured to connect the first through-hole and the second through-hole at the front surface of the inner structure.

公开(公告)号：US20180300063A1

公开(公告)日：2018-10-18

申请号：US16018790

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungik KANG ,  Jinyoung PARK ,  Heesub SHIN ,  Seungwook LEE

IPC: G06F3/06 ,  G06F12/02

Abstract: Disclosed are a memory compression method of an electronic device and an apparatus thereof. The method for compressing memory in an electronic device may include: detecting a request for executing the first application; determining whether or not the memory compression is required for the execution of the first application; when the memory compression is required, compressing the memory corresponding to an application in progress in the background of the electronic device; and executing the first application.

公开(公告)号：US20160058389A1

公开(公告)日：2016-03-03

申请号：US14665482

申请日：2015-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moonsook LEE ,  Jinyoung PARK ,  Seongho CHO ,  Woochang LEE ,  Juneyoung LEE

IPC: A61B5/00 ,  A61B5/0205 ,  A61B5/11 ,  A61B5/0488 ,  A61B5/145 ,  A61B5/0402

CPC classification number: A61B5/7221 ,  A61B5/01 ,  A61B5/02055 ,  A61B5/021 ,  A61B5/0402 ,  A61B5/0488 ,  A61B5/1102 ,  A61B5/14532 ,  A61B5/14546 ,  A61B5/4872 ,  A61B5/4875 ,  A61B5/681 ,  A61B5/7246 ,  A61B2560/0252 ,  A61B2560/0257

Abstract: A biosignal processing apparatus and a biosignal processing method are provided. The biosignal processing method includes: detecting a biosignal of a subject; detecting status information; and determining a correlation between the biosignal and the status information.

Abstract translation: 提供生物信号处理装置和生物信号处理方法。 生物信号处理方法包括：检测受试者的生物信号; 检测状态信息; 以及确定生物信号和状态信息之间的相关性。

公开(公告)号：US20140194089A1

公开(公告)日：2014-07-10

申请号：US14152527

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung PARK ,  Yongho YOU

IPC: H04M15/00 ,  H04W4/26

CPC classification number: H04M15/61 ,  H04L12/141 ,  H04L12/1417 ,  H04L12/1435 ,  H04M1/72519 ,  H04M1/72522 ,  H04M15/852 ,  H04M2250/22 ,  H04W4/18

Abstract: A method and apparatus for displaying icons according to data communication service usage states are provided. The method includes collecting information on the remaining service amount for at least one service having a service usage limit; and displaying a color adjusted icon based on the remaining service amount.

Abstract translation: 提供了一种根据数据通信服务使用状态显示图标的方法和装置。 所述方法包括收集关于具有服务使用限制的至少一个服务的剩余服务量的信息; 并且基于剩余的服务量显示颜色调整图标。

公开(公告)号：US20240363536A1

公开(公告)日：2024-10-31

申请号：US18634187

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung PARK ,  Heonjong SHIN ,  Jaehyun KANG ,  Youngsoo SONG

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including a first active region including first active patterns spaced apart by a first interval, a second active region including second active patterns spaced apart by a second interval, first and second source/drain regions on the first and second active regions, first and second contact structures connected to the first and second source/drain regions, first and second conductive through-structures connected to the first and second contact structures, a power delivery structure in contact with bottom surfaces of the first and second conductive through-structures, a frontside interconnection structure, and a backside interconnection structure. The first conductive through-structure may be connected to the first source/drain region through the first contact structure. The second conductive through-structure may be connected to the second source/drain region through the frontside interconnection structure. The second interval may be different than the first interval.

公开(公告)号：US20220406888A1

公开(公告)日：2022-12-22

申请号：US17574074

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seonbae KIM ,  Sungmin KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above the substrate and contacting an upper surface of the active pattern; channels spaced apart from each other along a direction perpendicular to the upper surface of the substrate, each of the channels including a material provided in the active pattern; and a gate structure contacting an upper surface of the insulation pattern, an upper surface of the channels, a lower surface of the channels, and sidewalls of the channels opposite to each other. A first distance between an upper surface of the active pattern and a lowermost one of the channels is greater than a second distance between an upper surface of one of the channels and a lower surface of an adjacent channel.

公开(公告)号：US20210273681A1

公开(公告)日：2021-09-02

申请号：US17322397

申请日：2021-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yangwoon ROH ,  Sanguk PARK ,  Jinyoung PARK ,  Myunggyun YOON ,  Heonsoon JANG ,  Seyeong CHEON ,  Hyunpil KIM ,  Hwanjin KIM

IPC: H04B5/00 ,  H04B5/04 ,  H04W76/14 ,  H04W4/80

Abstract: An electronic device includes a communication interface operable to perform contactless communication with an external device; and a processor operable to control to determine a communication type to be performed with the external device; when the communication type is a first type of continuous communication, configure data in a long packet structure; when the communication type is a second type of discontinuous communication, configure data in a short packet structure; and perform data communication in the continuous communication or in the discontinuous communication with the external device on the basis of the determined communication type.

公开(公告)号：US20210076995A1

公开(公告)日：2021-03-18

申请号：US17102587

申请日：2020-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonmyeong CHOI ,  Jinyoung PARK

IPC: A61B5/145 ,  A61B5/1495 ,  A61B5/1455 ,  G01N33/483 ,  A61B5/00 ,  G16H50/20

Abstract: A method for predicting a concentration of an in vivo analyte includes obtaining a plurality of in vivo spectra of the in vivo analyte, determining a learning section for a concentration predicting algorithm for the analyte based on an unchanged section, during which the concentration of the analyte is not substantially changed, and a plurality of the in vivo spectra, and predicting the concentration of the in vivo analyte by using the concentration predicting algorithm based on a learned result of the learning section and an intrinsic spectrum of the in vivo analyte.