公开(公告)号：US10339693B2

公开(公告)日：2019-07-02

申请号：US16250176

申请日：2019-01-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kunio Hosoya

IPC: G06T15/00 ,  G06F1/16 ,  G06T13/20 ,  G06F3/01 ,  H04M1/02

Abstract: An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic, portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.

公开(公告)号：US09496375B2

公开(公告)日：2016-11-15

申请号：US14831972

申请日：2015-08-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Atsuo Isobe ,  Kunio Hosoya

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/441 ,  H01L29/51 ,  H01L29/417 ,  H01L29/786 ,  H01L27/12 ,  H01L21/383 ,  H01L21/425 ,  H01L21/4757 ,  H01L29/24 ,  H01L29/49 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115

CPC classification number: H01L29/66969 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/517 ,  H01L29/7869

Abstract: To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

公开(公告)号：US09235071B2

公开(公告)日：2016-01-12

申请号：US14323316

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kunio Hosoya

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/1343

CPC classification number: G02F1/133305 ,  G02F1/133308 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/13456

Abstract: It is an object of the present invention to provide a display device where expansion of a frame portion over a substrate, which results from formation of a lead wiring over an active matrix substrate, is minimally suppressed to realize a narrow frame. According to one feature of a display device of the present invention, a chamfer portion is formed at least at an end portion of an active matrix substrate having a pixel portion of a pair of substrates disposed to be opposed to each other, and wirings (a source line, a gate line, a storage capacitor line, a leading out wiring, and the like) over the active matrix substrate are electrically connected by a common wiring formed in the chamfer portion.

公开(公告)号：US08927127B2

公开(公告)日：2015-01-06

申请号：US13689938

申请日：2012-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kunio Hosoya ,  Kunio Kimura

IPC: H01M4/00 ,  H01M10/052 ,  H01M10/0587 ,  H01M4/38 ,  H01M2/02

CPC classification number: H01M10/0431 ,  H01M4/38 ,  H01M4/386 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0587 ,  H01M2002/0205 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02T10/7011

Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.

Abstract translation: 正方形锂二次电池包括卷绕体，其中正极片和负极片彼此重叠的第一隔板彼此重叠的集合片，其中第二隔板放置在集合片内。 正电极片和负极片中的至少一个的一个或两个表面上的活性物质混合层包括具有多个开口的区域和不具有开口的区域。 至少集合片的弯曲部分被具有多个开口的区域覆盖。

公开(公告)号：US20130203214A1

公开(公告)日：2013-08-08

申请号：US13755862

申请日：2013-01-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Atsuo Isobe ,  Kunio Hosoya

IPC: H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/517 ,  H01L29/7869

Abstract: To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.