公开(公告)号：US20130270549A1

公开(公告)日：2013-10-17

申请号：US13833389

申请日：2013-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/47573 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

Abstract translation: 在包括氧化物半导体的半导体器件中，氧空位的量减少。 此外，提高了包括氧化物半导体的半导体器件的电特性。 半导体器件包括晶体管，其包括在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的氧化物半导体膜，其间设置有栅极绝缘膜，以及与氧化物接触的一对电极 半导体膜; 并且在所述晶体管上方，覆盖所述栅极绝缘膜，所述氧化物半导体膜和所述一对电极的第一绝缘膜; 以及覆盖所述第一绝缘膜的第二绝缘膜。 第一绝缘膜的蚀刻速率低于或等于10nm / min，并且当在25℃下用0.5重量％的氢氟酸进行蚀刻时，蚀刻速率低于第二绝缘膜的蚀刻速率。

公开(公告)号：US20130082254A1

公开(公告)日：2013-04-04

申请号：US13626346

申请日：2012-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshinari SASAKI

IPC: H01L29/20

CPC classification number: H01L29/20 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/7869

Abstract: A highly reliable structure is provided when high-speed driving of a semiconductor device is achieved by improving on-state characteristics of the transistor. The on-state characteristics of the transistor are improved as follows: an end portion of a source electrode and an end portion of a drain electrode overlap with end portions of a gate electrode, and the gate electrode surely overlaps with a region serving as a channel formation region of an oxide semiconductor layer. Further, embedded conductive layers are formed in an insulating layer so that large contact areas are obtained between the embedded conductive layers and the source and drain electrodes; thus, the contact resistance of the transistor can be reduced. Prevention of coverage failure with a gate insulating layer enables the oxide semiconductor layer to be thin; thus, the transistor is miniaturized.

Abstract translation: 通过改善晶体管的导通状态特性来实现半导体器件的高速驱动时，提供高度可靠的结构。 晶体管的导通状态改善如下：源电极的端部和漏电极的端部与栅电极的端部重叠，并且栅极电极确定地与用作沟道的区域重叠 氧化物半导体层的形成区域。 此外，嵌入的导电层形成在绝缘层中，使得在嵌入的导电层和源极和漏极之间获得大的接触面积; 因此，可以降低晶体管的接触电阻。 利用栅极绝缘层防止覆盖失效，使氧化物半导体层变薄; 因此，晶体管小型化。

公开(公告)号：US20250062121A1

公开(公告)日：2025-02-20

申请号：US18934417

申请日：2024-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US20240178323A1

公开(公告)日：2024-05-30

申请号：US18433864

申请日：2024-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Toshinari SASAKI ,  Shuhei YOKOYAMA ,  Takashi HAMOCHI

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/24 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US20230238387A1

公开(公告)日：2023-07-27

申请号：US18129975

申请日：2023-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1218 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/78633 ,  H01L29/78654

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20230006064A1

公开(公告)日：2023-01-05

申请号：US17900955

申请日：2022-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Toshinari SASAKI ,  Shuhei YOKOYAMA ,  Takashi HAMOCHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US20220393035A1

公开(公告)日：2022-12-08

申请号：US17886643

申请日：2022-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

公开(公告)号：US20220285562A1

公开(公告)日：2022-09-08

申请号：US17750487

申请日：2022-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20210366709A1

公开(公告)日：2021-11-25

申请号：US17388403

申请日：2021-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US20210225889A1

公开(公告)日：2021-07-22

申请号：US17223276

申请日：2021-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G09G3/20 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.