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    Display Apparatus, Display Module, and Electronic Device
    22.
    发明申请
    Display Apparatus, Display Module, and Electronic Device 有权

    公开(公告)号：US20250008781A1

    公开(公告)日：2025-01-02

    申请号：US18707755

    申请日：2022-10-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yuichi YANAGISAWA

    IPC: H10K59/122

    Abstract: A high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first sidewall insulating layer, a second sidewall insulating layer, an insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting device includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer and the second EL layer emit white light. The first sidewall insulating layer is in contact with the side surface of the first pixel electrode. The second sidewall insulating layer is in contact with the side surface of the second pixel electrode. The insulating layer covers the side surface and part of the top surface of the first EL layer and the side surface and part of the top surface of the second EL layer. The first coloring layer overlaps with the first light-emitting device. The second coloring layer overlaps with the second light-emitting device. The first coloring layer and the second coloring layer have functions of transmitting light of different colors.

    Display Apparatus
    23.
    发明申请
    Display Apparatus 有权

    公开(公告)号：US20240414997A1

    公开(公告)日：2024-12-12

    申请号：US18702195

    申请日：2022-10-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuichi YANAGISAWA ,  Daiki NAKAMURA ,  Hiromi SAWAI

    IPC: H10K59/88 ,  H10K50/19 ,  H10K59/131 ,  H10K59/80

    Abstract: A display apparatus with high display quality is provided. The display apparatus includes a pixel portion and a dummy pixel portion placed outside the pixel portion and not contributing to display; the pixel portion includes a plurality of light-emitting devices; each of the light-emitting devices includes a pixel electrode, a first layer that includes a light-emitting layer, and a common electrode; the first layers of adjacent pixels of a plurality of pixels are separated by a first insulating layer containing an inorganic material and a second insulating layer containing an organic material; the side surface of the first layer includes a region in contact with the first insulating layer; the second insulating layer is over and in contact with the first insulating layer and is placed below the common electrode; the dummy pixel portion includes a plurality of dummy light-emitting devices; each of the dummy light-emitting devices includes a conductive layer and a second layer; the side surface of the second layer includes a region in contact with the first insulating layer; the second insulating layer is over and in contact with the first insulating layer; the conductive layer contains the same material as the pixel electrode; and the second layer contains the same material as the light-emitting layer.

    DISPLAY APPARATUS
    24.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20240397770A1

    公开(公告)日：2024-11-28

    申请号：US18693614

    申请日：2022-09-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Daiki NAKAMURA ,  Yuichi YANAGISAWA

    IPC: H10K59/131 ,  H10K50/11 ,  H10K59/124 ,  H10K59/35

    Abstract: A high-definition display apparatus is provided. A display apparatus with low power consumption is provided. A display apparatus with high luminance is provided. A display apparatus with a high aperture ratio is provided. The display apparatus includes a first wiring, a second wiring, a third wiring, and a pixel electrode. The first wiring extends in a first direction and is supplied with a source signal. The second wiring extends in a second direction intersecting with the first direction and is supplied with a gate signal. A constant potential is applied to the third wiring. In addition, the first wiring and the pixel electrode are provided to overlap with each other with the third wiring therebetween. An insulating layer includes a portion in contact with part of a top surface of the pixel electrode and a portion in contact with a side surface of the pixel electrode. An EL layer includes a first portion in contact with another part of the top surface of the pixel electrode and a second portion positioned over the insulating layer. The second portion includes a region whose thickness is half or less of thickness of the first portion.

    METHOD OF FABRICATING DISPLAY DEVICE
    25.
    发明公开
    METHOD OF FABRICATING DISPLAY DEVICE 审中-公开

    公开(公告)号：US20240324279A1

    公开(公告)日：2024-09-26

    申请号：US18260969

    申请日：2021-12-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Yuichi YANAGISAWA ,  Naoto GOTO ,  Shun MASHIRO

    IPC: H10K59/12 ,  H10K59/122 ,  H10K71/20

    CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K71/233

    Abstract: A method of fabricating a display device with high resolution is provided. A display device having both high display quality and high resolution is provided. The method of fabricating a display device includes steps of forming a first EL film and a first sacrificial film over a first pixel electrode and a second pixel electrode; etching the first sacrificial film to form a first sacrificial layer; etching the first EL film to form a first EL layer and to expose the second pixel electrode; forming a second EL film and a second sacrificial film; etching the second sacrificial film to form a second sacrificial layer; etching the second EL film to form a second EL layer; forming an insulating film covering the first sacrificial layer, the first EL layer, the second sacrificial layer, and the second EL layer; and etching the insulating film to form an insulating layer including a region in contact with a side surface of the first EL layer and a region in contact with a side surface of the second EL layer.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
    27.
    发明公开
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE 审中-公开

    公开(公告)号：US20240057451A1

    公开(公告)日：2024-02-15

    申请号：US18259135

    申请日：2021-12-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Shiro NISHIZAKI ,  Hiromi SAWAI

    IPC: H10K59/80 ,  H10K59/124 ,  H10K59/12

    CPC classification number: H10K59/873 ,  H10K59/124 ,  H10K59/1201

    Abstract: A high-resolution display device and a manufacturing method thereof are provided. The display device includes a first insulating layer, a first light-emitting element and a second light-emitting element over the first insulating layer, a third insulating layer located to be over and cover the first light-emitting element, and a fifth insulating layer located to be over and cover the second light-emitting element. The first light-emitting element and the second light-emitting element emit light of different colors. A first groove and a second groove are provided in a region that is in the first insulating layer and between the first light-emitting element and the second light-emitting element. Part of the third insulating layer is embedded in the first groove, and part of the fifth insulating layer is embedded in the second groove.

    A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    29.
    发明申请
    A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220157992A1

    公开(公告)日：2022-05-19

    申请号：US17432123

    申请日：2020-02-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuichi YANAGISAWA ,  Hisao IKEDA ,  Tsutomu MURAKAWA

    IPC: H01L29/786 ,  H01L29/417

    Abstract: A semiconductor device with high productivity is provided. The semiconductor device includes a first and a second transistor and a first and a second capacitor. The first and the second transistor include gate electrodes and back gate electrodes. The second transistor is provided in a layer above the first transistor, and the second capacitor is provided in a layer above the first capacitor. One electrode of the first capacitor is electrically connected to one of a source electrode and a drain electrode of the first transistor and electrically connected to one of a source electrode and a drain electrode of the second transistor. The other electrode of the first capacitor is formed in the same layer as the back gate electrode of the second transistor.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    30.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220020883A1

    公开(公告)日：2022-01-20

    申请号：US17428825

    申请日：2020-02-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Satoru OKAMOTO

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second insulator provided between the first insulator and the first oxide, a second oxide in contact with the first insulator and in contact with a side surface of the first oxide, and a third insulator over the first insulator, the second oxide, and the first oxide. The third insulator includes a region in contact with a top surface of the first oxide. The second insulator and the third insulator include a material which is less likely to pass oxygen than the second oxide.

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