公开(公告)号：US20230403881A1

公开(公告)日：2023-12-14

申请号：US18033846

申请日：2021-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shingo EGUCHI ,  Satoshi SEO ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/38 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/38 ,  H10K59/1201

Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a first light-emitting device, a second light-emitting device, and a partition, the first light-emitting device includes a first electrode, a second electrode, and a first layer, and the first layer includes a region interposed between the second electrode and the first electrode. The first layer contains a first material having a hole-transport property and a first substance having an acceptor property, and has a predetermined electrical resistivity. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer, and the second layer includes a region interposed between the fourth electrode and the third electrode. The second layer contains the first material having the hole-transport property and the first substance having the acceptor property, and the second layer includes a first gap between the second layer and the first layer. The first gap includes a region overlapping with the partition, and the first gap prevents electrical continuity between the first layer and the second layer.

公开(公告)号：US20220328692A1

公开(公告)日：2022-10-13

申请号：US17835184

申请日：2022-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Suzunosuke HIRAISHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L29/66

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.

公开(公告)号：US20220246731A1

公开(公告)日：2022-08-04

申请号：US17725643

申请日：2022-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49 ,  H01L29/06 ,  H01L29/10

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20220127713A1

公开(公告)日：2022-04-28

申请号：US17431275

申请日：2020-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: C23C14/34 ,  C23C14/08 ,  H01L21/66

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20210202745A1

公开(公告)日：2021-07-01

申请号：US17180968

申请日：2021-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H05B33/14 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10

Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US20210072605A1

公开(公告)日：2021-03-11

申请号：US17082094

申请日：2020-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20210028313A1

公开(公告)日：2021-01-28

申请号：US16982182

申请日：2019-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/15 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer containing a metal oxide, a first insulating layer, a second insulating layer, a third insulating layer containing a nitride, and a first conductive layer. The first insulating layer includes a projecting first region that overlaps with the semiconductor layer and a second region that does not overlap with the semiconductor layer and is thinner than the first region. The second insulating layer is provided to cover a top surface of the second region, a side surface of the first region, and the semiconductor layer. The first conductive layer is provided over the second insulating layer and a bottom surface of the first conductive layer over the second region includes a portion positioned below a bottom surface of the semiconductor layer.

公开(公告)号：US20210020666A1

公开(公告)日：2021-01-21

申请号：US17030560

申请日：2020-09-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA

IPC: H01L27/12 ,  G02F1/1362 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/786

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US20200013893A1

公开(公告)日：2020-01-09

申请号：US16571769

申请日：2019-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US20190326538A1

公开(公告)日：2019-10-24

申请号：US16458575

申请日：2019-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC: H01L51/50 ,  H01L51/00 ,  H01L27/32 ,  H01L27/12

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.