公开(公告)号：US20250048676A1

公开(公告)日：2025-02-06

申请号：US18713288

申请日：2022-11-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Satoru SAITO ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI ,  Masahiro WAKUDA ,  Toshiki HAMADA

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element. In a cross-sectional view in a channel length direction, a distance from the first conductor to the first insulator is greater than or equal to a thickness of the first insulator and less than or equal to a distance from the third conductor to the metal oxide.

公开(公告)号：US20250040250A1

公开(公告)日：2025-01-30

申请号：US18790447

申请日：2024-07-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20250031422A1

公开(公告)日：2025-01-23

申请号：US18785690

申请日：2024-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H10B12/00

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20250023362A1

公开(公告)日：2025-01-16

申请号：US18711808

申请日：2022-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Tetsuya KAKEHATA ,  Yosuke TSUKAMOTO ,  Shigeru ONOYA ,  Noboru INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  B60R25/045 ,  B62J43/13 ,  B62J43/16 ,  H04L9/40 ,  H04W12/06

Abstract: An electric vehicle and a system that easily recognize theft of a secondary battery of an electric vehicle typified by an electrically assisted bicycle and prevent the theft are provided. To prevent the theft of a secondary battery that can be detached from an electric vehicle typified by an electrically assisted bicycle or an electric motorcycle, mutual authentication between an electric vehicle body unit and a secondary battery unit is performed. The secondary battery unit at least includes a first memory portion storing first identification information, an authentication portion, and a wireless communication portion.

公开(公告)号：US20250015614A1

公开(公告)日：2025-01-09

申请号：US18894219

申请日：2024-09-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei TAKAHASHI ,  Yuki OKAMOTO ,  Minato ITO ,  Takahiko ISHIZU ,  Hiroki INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  H01M10/42 ,  H01M10/44 ,  H03K3/0231 ,  H03K17/082

Abstract: A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.

公开(公告)号：US20250014530A1

公开(公告)日：2025-01-09

申请号：US18888227

申请日：2024-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA

IPC: G09G3/36 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/027 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/67 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

公开(公告)号：US20250010809A1

公开(公告)日：2025-01-09

申请号：US18894169

申请日：2024-09-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA

IPC: B60R21/0134 ,  B60R21/00 ,  B60R21/01 ,  B60R21/013 ,  G06V20/56

Abstract: An occupant protection device which can protect an occupant without delay is provided. An image taken by an imaging device is analyzed to judge whether there is an object approaching the subject car. In the case where a collision between the object and the subject car is judged to be inevitable, an airbag device is activated before the collision, whereby the occupant can be protected without delay. By using selenium for a light-receiving element of the imaging device, an accurate image can be obtained even under low illuminance. Imaging in a global shutter system leads to an accurate image with little distortion. This enables more accurate image analysis.

公开(公告)号：US20250008721A1

公开(公告)日：2025-01-02

申请号：US18706096

申请日：2022-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hitoshi KUNITAKE ,  Rihito WADA ,  Kiyoshi KATO ,  Tatsuya ONUKI

IPC: H10B12/00

Abstract: A small semiconductor device is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer includes a p-channel first transistor containing silicon in a channel formation region. The second layer includes an n-channel second transistor containing a metal oxide in a channel formation region. The first transistor and the second transistor form a CMOS circuit. A channel length of the first transistor is longer than a channel length of the second transistor.

公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240429319A1

公开(公告)日：2024-12-26

申请号：US18817534

申请日：2024-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.