Abstract:
An imaging device with an arithmetic function in which the circuit size is reduced is provided. The imaging device includes a plurality of pixel blocks. Each of the pixel blocks includes N (N is an integer greater than or equal to 1) first circuits, N second circuits, and a third circuit. Each of the first circuits includes a photoelectric conversion device, and the photoelectric conversion device has a function of converting incident light into an electrical signal and has a function of outputting a first signal that is obtained by binarizing the electrical signal to the second circuit. Each of the second circuits has a function of outputting a second signal that is obtained by multiplying the first signal by a weight coefficient to a third circuit. When the N second signals are output to a wiring electrically connected to the third circuit, addition is performed. The first circuit includes a transistor, and an OS transistor is preferably used as the transistor.
Abstract:
A long-life light-emitting element is provided by reducing a specific kind of impurity in the light-emitting element, particularly an impurity originating in an iridium complex. The light-emitting element includes an iridium complex. The iridium complex includes an iridium metal and a ligand coordinated to the iridium metal. In analysis of the light-emitting element by liquid chromatography mass spectrometry using a chromatograph of a photodiode array detector, the proportion of the peak area of a ligand not coordinated to the iridium metal to the peak area of the iridium complex is greater than or equal to 0% and less than or equal to 10%.
Abstract:
A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element. In a cross-sectional view in a channel length direction, a distance from the first conductor to the first insulator is greater than or equal to a thickness of the first insulator and less than or equal to a distance from the third conductor to the metal oxide.
Abstract:
A light-emitting element emitting phosphorescence and having high emission efficiency, in which a property of injecting holes to a light-emitting layer is increased, is provided. The light-emitting layer of the light-emitting element includes a first organic compound represented by the following general formula (G1) and a second organic compound which is a phosphorescent compound. The difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is lower than or equal to 0.3 eV.
Abstract:
A semiconductor device storing data as a multilevel potential is provided. The semiconductor device includes a memory cell, first and second reference cells, first and second sense amplifiers, and first to third circuits. The first circuit has a function of outputting, to a first wiring and a third wiring, a first potential corresponding to a first signal output from the memory cell. The second circuit has a function of outputting, to a second wiring, a first reference potential corresponding to a second signal output from the first reference cell. The third circuit has a function of outputting, to the fourth wiring, a second reference potential corresponding to a third signal output from the second reference cell when a second switch is in an off state. The first sense amplifier refers to the first potential and the first reference potential and changes potentials of the first wiring and the second wiring. The second sense amplifier refers to the first potential and the second reference potential and changes potentials of the third wiring and the fourth wiring.
Abstract:
To provide a novel light-emitting element or a highly reliable light-emitting element. To provide a light-emitting device, a display device, an electronic device, and a lighting device each of which can be manufactured at a low cost. To provide a light-emitting element including an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a light-emitting layer and an electron injection transport layer between the light-emitting layer and the cathode, and the amount of a halogen detected from a material forming the electron injection transport layer is less than or equal to 30 ppm.
Abstract:
An image processing method for increasing the stereoscopic effect of an image is provided. Difference mask data including an object area and a background area is created from image data, and the center coordinate of the object area is calculated. Then, a gradation pattern is selected in accordance with the average brightness value of the object area and applied to the background area, whereby a gradation mask data is created. After that, the image data of the background area is converted into image data based on the gradation mask data, so that the stereoscopic effect of the image is increased.