公开(公告)号：US20160079474A1

公开(公告)日：2016-03-17

申请号：US14952641

申请日：2015-11-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duck II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0091

Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.

Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

公开(公告)号：US09281446B2

公开(公告)日：2016-03-08

申请号：US14385113

申请日：2013-02-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duk Il Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ji Hye Kim

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/24 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.

Abstract translation: 公开了一种发光二极管及其制造方法。 发光二极管包括具有多个通孔的GaN衬底; GaN基半导体堆叠结构，其放置在基板上并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及经由所述通孔与所述第一导电型半导体层电连接的第一电极。 发光二极管可以减少晶体缺陷并防止发光面积的减少。

公开(公告)号：US20150270441A1

公开(公告)日：2015-09-24

申请号：US14732455

申请日：2015-06-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Sum Geun Lee ,  Kyung Wan Kim ,  Yeo Jin Yoon ,  Duk Il Suh ,  Ji Hye Kim

IPC: H01L33/20 ,  H01L33/16 ,  H01L33/32 ,  H01L27/15 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/20 ,  H01L27/153 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.

Abstract translation: 提供具有凹凸图案的基板，包括该基板的发光二极管（LED）以及制造该LED的方法。 LED包括基板和设置在基板的上表面中并具有由凸部限定的凸起和凹部的凹凸图案。 存在具有依次设置在基板上的第一导电半导体层或有源层，第二导电半导体层的单元发光器件。