公开(公告)号：US11233092B2

公开(公告)日：2022-01-25

申请号：US17069610

申请日：2020-10-13

Applicant: SONY CORPORATION

Inventor： Tetsuji Yamaguchi ,  Atsushi Toda ,  Itaru Oshiyama

IPC: H01L27/30 ,  H01L27/146 ,  H04N9/07 ,  H01L31/10 ,  G02B5/20 ,  H04N5/369 ,  H01L27/28 ,  H04N5/33 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/378

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

公开(公告)号：US10128291B2

公开(公告)日：2018-11-13

申请号：US15610345

申请日：2017-05-31

Applicant: SONY CORPORATION

Inventor： Takeshi Yanagita ,  Itaru Oshiyama ,  Takayuki Enomoto ,  Harumi Ikeda ,  Shinichiro Izawa ,  Atsuhiko Yamamoto ,  Kazunobu Ota

IPC: H01L31/062 ,  H01L27/146

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US10096638B2

公开(公告)日：2018-10-09

申请号：US15610345

申请日：2017-05-31

Applicant: SONY CORPORATION

Inventor： Takeshi Yanagita ,  Itaru Oshiyama ,  Takayuki Enomoto ,  Harumi Ikeda ,  Shinichiro Izawa ,  Atsuhiko Yamamoto ,  Kazunobu Ota

IPC: H01L31/062 ,  H01L27/146

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US09490373B2

公开(公告)日：2016-11-08

申请号：US13749393

申请日：2013-01-24

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Itaru Oshiyama ,  Yuki Miyanami ,  Takeshi Takeda

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L27/146 ,  H04N5/359 ,  H04N5/3745

CPC classification number: H01L31/0216 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/0224 ,  H04N5/3591 ,  H04N5/37452

Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

Abstract translation: 提供了一种固态成像装置，其包括其中多个单位像素布置在半导体衬底上的像素阵列部分，所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分， 累积光电荷的电荷累积部分，其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。

公开(公告)号：US20150214264A1

公开(公告)日：2015-07-30

申请号：US14570784

申请日：2014-12-15

Applicant: Sony Corporation

Inventor： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US08928103B2

公开(公告)日：2015-01-06

申请号：US13888926

申请日：2013-05-07

Applicant: Sony Corporation

Inventor： Yoshiyuki Ohba ,  Susumu Hiyama ,  Itaru Oshiyama

IPC: H01L31/0232 ,  H01L21/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/02

CPC classification number: H01L31/02164 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14685 ,  H01L31/02016 ,  H01L31/0232

Abstract: A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.

Abstract translation: 一种固态成像元件，包括具有执行入射光的光电转换的光接收部分的半导体衬底; 形成在所述半导体衬底的表面上的氧化物层; 遮光层，其通过粘合层形成在比氧化物层更上层的上层上; 以及设置在氧化物层和粘合层之间并由表现出比形成氧化物层的材料的氧化焓小的材料形成的氧供应层。

公开(公告)号：US20130200479A1

公开(公告)日：2013-08-08

申请号：US13749393

申请日：2013-01-24

Applicant: SONY CORPORATION

Inventor： Yorito Sakano ,  Itaru Oshiyama ,  Yuki Miyanami ,  Takeshi Takeda

IPC: H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/0216 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/0224 ,  H04N5/3591 ,  H04N5/37452

Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

Abstract translation: 提供了一种固态成像装置，其包括其中多个单位像素布置在半导体衬底上的像素阵列部分，所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分， 累积光电荷的电荷累积部分，其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。