公开(公告)号：US09406783B2

公开(公告)日：2016-08-02

申请号：US14788737

申请日：2015-06-30

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US20160211376A1

公开(公告)日：2016-07-21

申请号：US15084312

申请日：2016-03-29

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/16 ,  H01L29/06 ,  H01L29/161

CPC classification number: H01L27/10879 ,  H01L21/2251 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4236 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7855 ,  H01L29/78603 ,  H01L29/78654

Abstract: Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.

公开(公告)号：US09385051B2

公开(公告)日：2016-07-05

申请号：US14822959

申请日：2015-08-11

Applicant: STMicroelectronics, Inc.

Inventor： Ronald K. Sampson ,  Nicolas Loubet

IPC: H01L21/84 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L29/10

CPC classification number: H01L27/1211 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/26513 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.

Abstract translation: 将半导体材料图案化以限定与底层基板绝缘的细长翅片。 多晶硅半导体材料沉积在细长翅片之上并在细长翅片之间，并且被图案化以限定延伸到在晶体管沟槽处垂直交叉在细长翅片上的细长门。 侧壁间隔件形成在细长门的侧壁上。 位于细长门之间的细长翅片的部分与下面的绝缘体一起被去除以暴露下面的基底。 然后在细长门之间的位置从下面的衬底外延生长一个或多个半导体材料层。 一个或多个半导体材料层可以包括未掺杂的外延层和上覆的掺杂外延层。 外延材料限定晶体管的源极或漏极。

公开(公告)号：US09245953B2

公开(公告)日：2016-01-26

申请号：US14597457

申请日：2015-01-15

Applicant: STMICROELECTRONICS, INC.

Inventor： Nicolas Loubet ,  Pierre Morin

IPC: H01L21/8238 ,  H01L29/15 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

公开(公告)号：US20150270398A1

公开(公告)日：2015-09-24

申请号：US14223373

申请日：2014-03-24

Applicant: STMicroelectronics, Inc. ,  Globalfoundries Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/308 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/7848 ,  H01L21/28194 ,  H01L21/3085 ,  H01L29/0847 ,  H01L29/515 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7849 ,  H01L29/785

Abstract: One method disclosed includes, among other things, forming a fin structure comprised of a semiconductor material, a first epi semiconductor material and a second epi semiconductor material, forming a sacrificial gate structure above the fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, performing at least one etching process to remove the portions of the fin structure positioned laterally outside of the sidewall spacer so as to thereby define a fin cavity in the source/drain regions of the device and to expose edges of the fin structure positioned under the sidewall spacer, and performing an epitaxial deposition process to form an epi etch stop layer on the exposed edges of the fin structure positioned under the sidewall spacer and within the fin cavity.

Abstract translation: 所公开的一种方法包括形成由半导体材料，第一外延半导体材料和第二外延半导体材料构成的鳍状结构，在鳍状结构之上形成牺牲栅极结构，形成邻近牺牲栅极结构的侧壁间隔物 执行至少一个蚀刻工艺以去除位于侧壁间隔件外侧的翅片结构的部分，从而在该装置的源极/漏极区域中限定翅片空腔并且暴露位于该侧壁间隔之下的翅片结构的边缘 并且执行外延沉积工艺以在位于侧壁间隔件下方和翅片腔内的翅片结构的暴露边缘上形成外延蚀刻停止层。

公开(公告)号：US20150255605A1

公开(公告)日：2015-09-10

申请号：US14201555

申请日：2014-03-07

Applicant: International Business Machines Corporation ,  STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Ali Khakifirooz ,  Pierre Morin ,  Sanjay C. Mehta

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods and structures for increasing strain in fully insulated finFETs are described. The finFET structures may be formed on an insulating layer and include source, channel, and drain regions that are insulated all around. During fabrication, the source and drain regions may be formed as suspended structures. A strain-inducing material may be formed around the source and drain regions on four contiguous sides so as to impart strain to the channel region of the finFET.

Abstract translation: 描述了在全绝缘finFET中增加应变的方法和结构。 finFET结构可以形成在绝缘层上，并且包括绝缘的源极，沟道和漏极区域。 在制造期间，源区和漏区可以形成为悬挂结构。 应变诱导材料可以在四个相邻侧面上的源极和漏极区域周围形成，以便对finFET的沟道区域施加应力。

公开(公告)号：US09099570B2

公开(公告)日：2015-08-04

申请号：US14097556

申请日：2013-12-05

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Prasanna Khare

IPC: H01L27/092 ,  H01L21/84 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234

CPC classification number: H01L21/845 ,  H01L21/76205 ,  H01L21/76283 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/66795

Abstract: On a substrate formed of a first semiconductor material, a first overlying layer formed of a second semiconductor material is deposited. A second overlying layer formed of a third semiconductor material is deposited over the first overlying layer. The first and second overlying layers are patterned to define fins, wherein each fin includes a first region formed of the third material over a second region formed of the second material. An oxide material fills the space between the fins. A thermal oxidation is then performed to convert the second region to a material insulating the first region formed of the third material from the substrate. As an optional step, the second region formed of the second material is horizontally thinned before the oxide material is deposited and the thermal oxidation is performed. Once the fins are formed and insulated from the substrate, conventional FinFET fabrication is performed.

Abstract translation: 在由第一半导体材料形成的衬底上沉积由第二半导体材料形成的第一覆盖层。 由第三半导体材料形成的第二覆盖层沉积在第一覆盖层上。 图案化第一和第二覆盖层以限定翅片，其中每个翅片包括在由第二材料形成的第二区域上由第三材料形成的第一区域。 氧化物填充翅片之间的空间。 然后进行热氧化以将第二区域转换为将由第三材料形成的第一区域与衬底绝缘的材料。 作为可选步骤，在沉积氧化物材料并进行热氧化之前，由第二材料形成的第二区域被水平地薄化。 一旦翅片形成并与衬底绝缘，就进行常规的FinFET制造。

公开(公告)号：US20150126003A1

公开(公告)日：2015-05-07

申请号：US14596625

申请日：2015-01-14

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Qing Liu

IPC: H01L21/8238 ,  H01L21/84

CPC classification number: H01L21/823807 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/823821 ,  H01L21/845

Abstract: A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium semiconductor material is made on the bottom portion to produce a silicon-germanium region. The silicon region is patterned to define a first fin structure of a FinFET of a first (for example, n-channel) conductivity type. The silicon-germanium region is also patterned to define a second fin structure of a FinFET of a second (for example, p-channel) conductivity type.

Abstract translation: 由硅半导体材料形成的SOI衬底层包括相邻的第一和第二区域。 去除第二区域中的硅衬底层的一部分，使得第二区域保持由硅半导体材料制成的底部。 硅 - 锗半导体材料的外延生长在底部制成以产生硅 - 锗区。 图案化硅区域以限定第一（例如，n沟道）导电类型的FinFET的第一鳍结构。 硅 - 锗区域也被图案化以限定第二（例如p沟道）导电类型的FinFET的第二鳍结构。

公开(公告)号：US20150102412A1

公开(公告)日：2015-04-16

申请号：US14050576

申请日：2013-10-10

Applicant: STMicroelectronics, Inc.

Inventor： PIERRE MORIN ,  Qing Liu ,  Nicolas Loubet

IPC: H01L27/092 ,  H01L27/12 ,  H01L21/8238

CPC classification number: H01L27/1203 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/161

Abstract: A method for making a semiconductor device may include forming, on a first semiconductor layer of a semiconductor-on-insulator (SOI) wafer, a second semiconductor layer comprising a second semiconductor material different than a first semiconductor material of the first semiconductor layer. The method may further include performing a thermal treatment in a non-oxidizing atmosphere to diffuse the second semiconductor material into the first semiconductor layer, and removing the second semiconductor layer.

Abstract translation: 制造半导体器件的方法可以包括在绝缘体上半导体（SOI）晶片的第一半导体层上形成第二半导体层，该第二半导体层包括与第一半导体层的第一半导体材料不同的第二半导体材料。 该方法还可以包括在非氧化性气氛中进行热处理，以将第二半导体材料扩散到第一半导体层中，以及去除第二半导体层。

公开(公告)号：US20150093861A1

公开(公告)日：2015-04-02

申请号：US14042884

申请日：2013-10-01

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Qing Liu ,  Prasanna Khare

IPC: H01L21/84

CPC classification number: H01L21/84

Abstract: An SOI substrate includes first and second active regions separated by STI structures and including gate stacks. A spacer layer conformally deposited over the first and second regions including the gate stacks is directionally etched to define sidewall spacers along the sides of the gate stacks. An oxide layer and nitride layer are then deposited. Using a mask, the nitride layer over the first active region is removed, and the mask and oxide layer are removed to expose the SOI substrate in the first active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the first active region and a protective nitride layer is deposited. The masking, nitride layer removal, and oxide layer removal steps are then repeated to expose the SOI in the second active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the second active region.

Abstract translation: SOI衬底包括由STI结构分离并且包括栅叠层的第一和第二有源区。 在包括栅极堆叠的第一和第二区域上共形沉积的间隔层被定向蚀刻以沿着栅极堆叠的侧面限定侧壁间隔物。 然后沉积氧化物层和氮化物层。 使用掩模，去除第一有源区上的氮化物层，去除掩模和氧化物层以暴露第一有源区中的SOI衬底。 然后在第一有源区中与栅叠层相邻地外延生长凸起的源极 - 漏极结构，并且沉积保护性氮化物层。 然后重复掩模，氮化物层去除和氧化物层去除步骤以暴露第二有源区域中的SOI。 然后在第二活性区域中与栅叠层相邻地外延生长凸起的源极 - 漏极结构。