LDMOS POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    21.
    发明申请
    LDMOS POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    LDMOS功率半导体器件及其制造方法

    公开(公告)号:US20140197487A1

    公开(公告)日:2014-07-17

    申请号:US14151527

    申请日:2014-01-09

    Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

    Abstract translation: 一种电子半导体器件,包括:半导体本体,具有彼此相对的第一侧和第二侧,并且包括面向所述第二侧的第一结构区域和在所述第一结构区域上延伸并面向所述第一侧面的第二结构区域; 身体区域,其在所述第一侧面处在所述第二结构区域中延伸; 源区域,其在身体区域内延伸; 面向半导体主体的第一侧的LDD区; 和栅电极。 所述器件包括:沟槽电介质区域,其延伸穿过所述第二结构区域与所述沟槽电介质区域紧邻的第一沟槽导电区域; 以及与所述主体区域和所述源极区域电接触的第二沟槽导电区域。 半导体本体的第二侧的电触点经由第一结构区域与漏区电接触。

    Miniaturized optical particle detector

    公开(公告)号:US11768148B2

    公开(公告)日:2023-09-26

    申请号:US17367160

    申请日:2021-07-02

    CPC classification number: G01N15/1436 G01N2015/0046 G01N2015/1493

    Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.

    NDIR detector device for detecting gases having an infrared absorption spectrum

    公开(公告)号:US11079321B2

    公开(公告)日:2021-08-03

    申请号:US16584808

    申请日:2019-09-26

    Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.

    Miniaturized optical particle detector

    公开(公告)号:US11073467B2

    公开(公告)日:2021-07-27

    申请号:US16586627

    申请日:2019-09-27

    Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.

    Integrated circuits with backside metalization and production method thereof

    公开(公告)号:US10796918B2

    公开(公告)日:2020-10-06

    申请号:US15640203

    申请日:2017-06-30

    Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

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