公开(公告)号：US11822164B2

公开(公告)日：2023-11-21

申请号：US17009468

申请日：2020-09-01

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2202/06 ,  G02F2202/104 ,  G02F2202/105 ,  G02F2203/50

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

公开(公告)号：US10741740B2

公开(公告)日：2020-08-11

申请号：US16047505

申请日：2018-07-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Emmanuel Dubois ,  Jean-Francois Robillard ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L35/32 ,  H01L27/16

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

公开(公告)号：US20190265519A1

公开(公告)日：2019-08-29

申请号：US16254798

申请日：2019-01-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Frédéric Boeuf

IPC: G02F1/025

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

公开(公告)号：US10075102B2

公开(公告)日：2018-09-11

申请号：US15139151

申请日：2016-04-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arthur Arnaud ,  Jihane Boughaleb ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L41/113 ,  H02N2/18 ,  H02N3/00 ,  F03G7/06

CPC classification number: H02N2/18 ,  F03G7/06 ,  H01L41/1134 ,  H02N3/00

Abstract: A system for converting thermal energy into electrical power includes a temperature-sensitive element held in a frame by its two ends between a heat source and a cold source producing a thermal gradient. A piezoelectric element is positioned between the frame and at least one end of the temperature-sensitive element. The temperature-sensitive element is configured to deform cyclically between two states under the action of the thermal gradient. With each cyclic deformation, a stress is applied to the piezoelectric element via the one end.

公开(公告)号：US20170248543A1

公开(公告)日：2017-08-31

申请号：US15251009

申请日：2016-08-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Gaspard Hiblot

IPC: G01N27/414 ,  H01L27/12 ,  H01L29/788 ,  H01L27/06 ,  H01L29/423

CPC classification number: H01L27/0722 ,  G01N27/414 ,  G01N27/4145 ,  G01N33/49 ,  G01R19/16519 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/1207 ,  H01L29/42356

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.

公开(公告)号：US20150255705A1

公开(公告)日：2015-09-10

申请号：US14634454

申请日：2015-02-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Emilie Trioux ,  Pascal Ancey ,  Stephane Monfray ,  Thomas Skotnicki ,  Skandar Basrour ,  Paul Muralt

IPC: H01L41/27 ,  C23C4/10 ,  C23C4/12 ,  H01L41/08 ,  F03G7/06

CPC classification number: H01L41/27 ,  B32B15/01 ,  C22F1/00 ,  C23C4/10 ,  C23C4/134 ,  C23C10/12 ,  F03G7/06 ,  H01L41/0805 ,  H01L41/0815 ,  H01L41/33 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49124

Abstract: A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Abstract translation: 制造具有不同曲率的双稳态条带的方法，每条条带包括多个材料层，其中至少一个特定层部分通过等离子体喷涂方法在对每个条带不同的条件下进行沉积。

公开(公告)号：US20210041727A1

公开(公告)日：2021-02-11

申请号：US17083525

申请日：2020-10-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Frédéric Boeuf

IPC: G02F1/025 ,  H01L29/66

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

公开(公告)号：US10823986B2

公开(公告)日：2020-11-03

申请号：US16254798

申请日：2019-01-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Frédéric Boeuf

IPC: G02F1/035 ,  G02F1/025 ,  H01L29/66

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

公开(公告)号：US10684251B2

公开(公告)日：2020-06-16

申请号：US15631078

申请日：2017-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Getenet Tesega Ayele ,  Stephane Monfray

IPC: G01N27/414

Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.

公开(公告)号：US10074649B2

公开(公告)日：2018-09-11

申请号：US15251009

申请日：2016-08-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Gaspard Hiblot

IPC: H01L27/07 ,  G01N27/414 ,  H01L27/06 ,  H01L29/423 ,  G01R19/165 ,  G01N33/49

CPC classification number: H01L27/0722 ,  G01N27/414 ,  G01N27/4145 ,  G01N33/49 ,  G01R19/16519 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/1207 ,  H01L29/42356

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.