公开(公告)号：US20220359783A1

公开(公告)日：2022-11-10

申请号：US17624065

申请日：2020-06-03

Applicant: Samsung Display Co., LTD.

Inventor： Dong Uk KIM ,  Se Young KIM ,  Hyung Rae CHA

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/38

Abstract: A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

公开(公告)号：US20220199863A1

公开(公告)日：2022-06-23

申请号：US17513302

申请日：2021-10-28

Applicant: Samsung Display Co., LTD.

Inventor： Se Hun KIM ,  Chang Hee LEE ,  Yun Hyuk KO ,  Jun Bo SIM ,  Jae Kook HA ,  Dong Uk KIM ,  In Pyo KIM ,  Je Won YOO ,  Hyun Min CHO ,  Chan Woo JOO ,  Na Mi HONG

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/00 ,  H01L33/24

Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor layer on a substrate, the first semiconductor layer including a semiconductor of a first type; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer, the second semiconductor layer including a semiconductor of a second type different from the first type; performing an etching process of removing at least a portion of each of the first semiconductor layer, the active layer, and the second semiconductor layer in a direction toward the first semiconductor layer from the second semiconductor layer; and forming a first insulating layer to surround an outer surface of the active layer. The first insulating layer is formed by a wet process.

公开(公告)号：US20220190025A1

公开(公告)日：2022-06-16

申请号：US17401713

申请日：2021-08-13

Applicant: Samsung Display Co., LTD.

Inventor： Chul Jong YOO ,  Dong Uk KIM ,  Se Young KIM ,  So Young LEE ,  Hyung Rae CHA

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44

Abstract: A light emitting diode includes a first end and a second end facing each other, a current blocking layer, a first semiconductor layer, an active layer, a second semiconductor layer, and an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end. The current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from the second end to the first end.

公开(公告)号：US20220013693A1

公开(公告)日：2022-01-13

申请号：US17290682

申请日：2019-05-27

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min CHO ,  Jung Hong MIN ,  Dae Hyun KIM ,  Dong Uk KIM ,  Jae Hoon JUNG

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/00 ,  H01L33/24

Abstract: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of:
preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.

公开(公告)号：US20210305222A1

公开(公告)日：2021-09-30

申请号：US17258992

申请日：2018-12-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Hyun Deok IM ,  Hyun Min CHO ,  Jong Hyuk KANG ,  Dong Uk KIM ,  Bek Hyun LIM ,  Jae Ik LIM

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/24 ,  H01L33/40 ,  H01L33/62

Abstract: A light emitting device may include a first electrode disposed on a substrate, and a second electrode spaced apart from the first electrode, the first electrode and the second electrode being disposed on a same layer; an insulating pattern disposed between the first electrode and the second electrode, and overlapping a portion of the first electrode and a portion of the second electrode; and at least one light emitting element disposed on the insulating pattern, and including a first end and a second end in a longitudinal direction of the at least one light emitting element; a first bank disposed on the first electrode, and a second bank disposed on the second electrode; a first reflective electrode disposed on the first bank and electrically connected with the first electrode; and a second reflective electrode disposed on the second bank and electrically connected with the second electrode.

公开(公告)号：US20210265419A1

公开(公告)日：2021-08-26

申请号：US17316339

申请日：2021-05-10

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Uk KIM ,  Hyun Min CHO ,  Keun Kyu SONG ,  Dae Hyun KIM ,  Jung Hong MIN ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/60

Abstract: A display device includes a first pixel and a second pixel; a light emitting layer; a color conversion layer on the light emitting layer; and a color filter layer on the color conversion layer, the light emitting layer including one or more light emitting elements in the first pixel and the second pixel, the color conversion layer including a first color conversion layer in the first pixel and a second color conversion layer in the second pixel. The color filter layer includes a first color filter layer in the first pixel and a second color filter layer in the second pixel, the light emitting elements capable of emitting a first light having a first wavelength, each of the first color conversion layer and the second color conversion layer including first color conversion particles and second color conversion particles.

公开(公告)号：US20160062178A1

公开(公告)日：2016-03-03

申请号：US14717431

申请日：2015-05-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Uk KIM ,  Min Ki NAM ,  Hae Il PARK ,  Jun Han LEE

IPC: G02F1/1335 ,  G02B5/02 ,  G02B1/00

CPC classification number: G02B5/0242 ,  B82Y20/00 ,  G02B1/005 ,  G02F1/133602 ,  G02F1/133603 ,  G02F2001/133614 ,  G02F2202/32 ,  Y10S977/774

Abstract: A display device may include a substrate and a plurality of color conversion units on the substrate. Each of the plurality of color conversion units may include a photonic crystal layer having at least two layers having different refractive indices alternately stacked, and a wavelength shifter dispersed in at least one of the at least two layers.

Abstract translation: 显示装置可以在基板上包括基板和多个颜色转换单元。 多个颜色转换单元中的每一个可以包括具有交替堆叠的具有不同折射率的至少两层的光子晶体层，以及分散在至少两层中的至少一个层中的波长移位器。

公开(公告)号：US20240038738A1

公开(公告)日：2024-02-01

申请号：US18483444

申请日：2023-10-09

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Min CHO ,  Dae Hyun KIM ,  Dong Uk KIM ,  Jung Hong MIN ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L25/075 ,  H01L33/00 ,  H01L27/12 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0093 ,  H01L27/1214 ,  H01L33/22 ,  H01L33/62 ,  H01L2933/0066

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.

公开(公告)号：US20240032380A1

公开(公告)日：2024-01-25

申请号：US18120077

申请日：2023-03-10

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Ho KIM ,  Dong Uk KIM ,  Hoon Gi LEE

IPC: H10K59/60 ,  H10K59/122 ,  H10K59/80

CPC classification number: H10K59/60 ,  H10K59/122 ,  H10K59/87

Abstract: A display device includes a substrate, a first planarization layer disposed on a surface of the substrate, a second planarization layer disposed on a surface of the first planarization layer, a light-emitting element including a pixel electrode disposed on the surface of the second planarization layer, an emissive layer disposed on a surface of the pixel electrode, and a common electrode disposed on a surface of the emissive layer, a connection electrode disposed on the surface of the first planarization layer and electrically connecting the surface of the first planarization layer with an opposite surface of the first planarization layer through a first contact hole, and a light-absorbing layer disposed on the surface of the first planarization layer and covered by the second planarization layer.

公开(公告)号：US20230018385A1

公开(公告)日：2023-01-19

申请号：US17675052

申请日：2022-02-18

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Rae CHA ,  Dong Uk KIM ,  Dong Kyun SEO ,  Young Chul SIM

IPC: H01L33/32 ,  H01L33/38

Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.