公开(公告)号：US09966528B2

公开(公告)日：2018-05-08

申请号：US15177176

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Gen Feng ,  Vladimir Nikitin

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).

公开(公告)号：US09203017B2

公开(公告)日：2015-12-01

申请号：US14325049

申请日：2014-07-07

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on at least part of the top surface and between the pinned and free layers. The free layer has a free layer perimeter. The package structure(s) are ferromagnetic and encircles at least one of the free layer and the pinned layer. The package structure(s) are ferromagnetically coupled with the pinned layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁性包括钉扎层，非磁性间隔层，自由层和封装结构。 被钉扎层具有钉扎层周边和顶表面。 非磁性间隔层位于顶表面的至少一部分之间以及被钉扎层和自由层之间。 自由层具有自由层周长。 封装结构是铁磁性的并且包围自由层和钉扎层中的至少一个。 封装结构与固定层铁磁耦合。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20150035099A1

公开(公告)日：2015-02-05

申请号：US14325049

申请日：2014-07-07

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on at least part of the top surface and between the pinned and free layers. The free layer has a free layer perimeter. The package structure(s) are ferromagnetic and encircles at least one of the free layer and the pinned layer. The package structure(s) are ferromagnetically coupled with the pinned layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁性包括钉扎层，非磁性间隔层，自由层和封装结构。 被钉扎层具有钉扎层周边和顶表面。 非磁性间隔层位于顶表面的至少一部分之间以及被钉扎层和自由层之间。 自由层具有自由层周长。 封装结构是铁磁性的并且包围自由层和钉扎层中的至少一个。 封装结构与固定层铁磁耦合。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US10439133B2

公开(公告)日：2019-10-08

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US10411184B1

公开(公告)日：2019-09-10

申请号：US15968514

申请日：2018-05-01

Applicant: Samsung Electronics Co., LTD.

Inventor： Vladimir Nikitin ,  Dmytro Apalkov

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12

Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.

公开(公告)号：US20180247684A1

公开(公告)日：2018-08-30

申请号：US15965563

申请日：2018-04-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Gen Feng ,  Vladimir Nikitin

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).

公开(公告)号：US09806253B2

公开(公告)日：2017-10-31

申请号：US15066721

申请日：2016-03-10

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Dustin William Erickson ,  Vladimir Nikitin

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. At least one of the steps of providing the free layer and providing the pinned layer includes providing magnetic and sacrificial layers and performing two anneals of the sacrificial and magnetic layers. The magnetic layer includes a glass-promoting component and is amorphous as-deposited. The first anneal is at a first temperature exceeding 300 degrees Celsius and not exceeding 450 degrees Celsius. The second anneal is at a second temperature greater than the first temperature and performed after the first anneal. The sacrificial layer is removed.

公开(公告)号：US20170149387A1

公开(公告)日：2017-05-25

申请号：US15067009

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy ,  Vladimir Nikitin

IPC: H03B15/00

CPC classification number: H03B15/006 ,  G11C11/16 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

公开(公告)号：US09608039B1

公开(公告)日：2017-03-28

申请号：US15060592

申请日：2016-03-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a reference layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The magnetic junction includes a biasing structure for providing a magnetic bias in a first direction and/or the free layer has a length in the first direction and a width in a second direction. The width is less than the length. The SO active layer(s) are adjacent to the free layer and carry a current in a third direction. The third direction is at a nonzero acute angle from the first direction. The SO active layer(s) exerts a SO torque on the free layer due to the current passing through the at least one SO active layer. The free layer is switchable using the SO torque.

公开(公告)号：US20160197270A1

公开(公告)日：2016-07-07

申请号：US14981107

申请日：2015-12-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Robert Beach ,  Roman Chepulskyy ,  Dustin William Erickson ,  Vladimir Nikitin

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-formming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.

Abstract translation: 一种方法提供具有顶部和侧面的磁结。 沉积第一磁性层，非磁性间隔层和第二磁性层。 非磁性间隔层位于第一和第二磁性层之间。 自由层是磁性层之一。 参考层是另一个磁性层。 第二磁性层包括具有玻璃形成的非磁性成分的非晶磁性层。 在对非磁性成分具有亲和性的气体中进行退火。 气体包括第一和第二气体中的至少一种。 第一气体与非磁性成分形成气态化合物第二气体与非磁性成分形成固体化合物。 如果在定义了磁性结后进行退火，则可以使用第二种气体。 固体化合物至少在磁性结的两侧。