公开(公告)号：US20230078095A1

公开(公告)日：2023-03-16

申请号：US17695062

申请日：2022-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Youngdo Kim ,  Byeongsang Kim ,  Yunhwan Kim ,  Jungmo Yang ,  Sejin Oh ,  Sungho Jang

IPC: H01J37/32

Abstract: A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.

公开(公告)号：US20230010881A1

公开(公告)日：2023-01-12

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang KIM ,  Dougyong SUNG ,  Sungjin KIM ,  Yunhwan KIM ,  Inseok SEO ,  Seungbo SHIM ,  Naohiko OKUNISHI ,  Minyoung HUR

IPC: G01R27/16 ,  H01L21/683 ,  H01L21/67 ,  C23C16/52 ,  H01L21/66 ,  C23C16/455

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

公开(公告)号：US20210183618A1

公开(公告)日：2021-06-17

申请号：US17186965

申请日：2021-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho LEE ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

公开(公告)号：US20210104381A1

公开(公告)日：2021-04-08

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin JEON ,  Dougyong SUNG ,  Jongwoo SUN ,  Minkyu SUNG ,  Kimoon JUNG ,  Seongha JEONG ,  Ungyo JUNG ,  Jewoo HAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

公开(公告)号：US20180114700A1

公开(公告)日：2018-04-26

申请号：US15490945

申请日：2017-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hun WOO ,  Dougyong SUNG ,  Sejin OH

IPC: H01L21/311 ,  H01L21/683

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of atomic layer etching and fabricating a semiconductor device using the same, the atomic layer etching including providing a layer including atomic layers each having first and second atoms, the second atoms being different from the first atoms; and sequentially removing each of the atomic layers, wherein removing each of the atomic layers includes: providing a first etching gas that reacts with the first atoms such that the first etching gas is adsorbed on the first atoms; purging the first etching gas not adsorbed on the first atoms; removing the first atoms on which the first etching gas is adsorbed; providing a second etching gas that reacts with the second atoms such that the second etching gas is adsorbed on the second atoms; purging the second etching gas not adsorbed on the second atoms; and removing the second atoms on which the second etching gas is adsorbed.

公开(公告)号：US20180114675A1

公开(公告)日：2018-04-26

申请号：US15723837

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho Lee ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/67069

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.