公开(公告)号：US20160027652A1

公开(公告)日：2016-01-28

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin JEON ,  Kyung-Sun KIM ,  DOUGYONG SUNG ,  Tae-Hwa KIM ,  Heungsik PARK ,  Jung Min KIM

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

公开(公告)号：US20220351947A1

公开(公告)日：2022-11-03

申请号：US17548775

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihyun YOON ,  Sang Ki NAM ,  Kwonsang SEO ,  Sungho JANG ,  Jungmin KO ,  Nam Kyun KIM ,  Tae-Hyun KIM ,  Seunghan BAEK ,  Seungbin AHN ,  Jungmo YANG ,  Changheon LEE ,  Kangmin JEON

IPC: H01J37/32

Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

公开(公告)号：US20210104381A1

公开(公告)日：2021-04-08

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin JEON ,  Dougyong SUNG ,  Jongwoo SUN ,  Minkyu SUNG ,  Kimoon JUNG ,  Seongha JEONG ,  Ungyo JUNG ,  Jewoo HAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.