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公开(公告)号:US20230260568A1
公开(公告)日:2023-08-17
申请号:US18303309
申请日:2023-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinseok KIM , Yulhwa KIM , Jae-Joon KIM , Hyungjun KIM
IPC: G11C11/412 , G06N3/08 , G11C11/418 , G11C11/419
CPC classification number: G11C11/412 , G06N3/08 , G11C11/418 , G11C11/419
Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
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公开(公告)号:US20220310940A1
公开(公告)日:2022-09-29
申请号:US17690280
申请日:2022-03-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyuyoung HWANG , Byungjoon KANG , Seungyeon KWAK , Hyungjun KIM , Yong Joo LEE , Jeoungin YI , Byoungki CHOI
Abstract: Provided are an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device. M(L1)n1(L2)n2 Formula 1 M, L1, L2, n1, and n2 in Formula 1 are the same as described in the present specification.
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公开(公告)号:US20220085144A1
公开(公告)日:2022-03-17
申请号:US17209762
申请日:2021-03-23
Inventor: Changsoo LEE , Sangwoon LEE , Chan KWAK , Hyungjun KIM , Euncheol DO
IPC: H01L49/02 , H01L27/108
Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z In Formula 1, A, B, x, y, and z are disclosed in the specification.
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公开(公告)号:US20200184315A1
公开(公告)日:2020-06-11
申请号:US16561378
申请日:2019-09-05
Inventor: Sungho KIM , Yulhwa KIM , Hyungjun KIM , Jae-Joon KIM , Jinseok KIM
Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.
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公开(公告)号:US20250075111A1
公开(公告)日:2025-03-06
申请号:US18597179
申请日:2024-03-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungjun KIM
IPC: C09J133/08 , H01L21/683
Abstract: An adhesive composition comprising a binder resin and a photoinitiator. The binder resin includes a linear or a partially crosslinked copolymer having a plurality of repeating units derived from different acrylate monomers. The copolymer includes a repeating unit having a photoreactive functional group at a side chain and a repeating unit having a siloxane-based functional group at a side chain. The repeating unit has a siloxane-based functional group in a range of about 2% to about 5% of a total weight of the copolymer.
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公开(公告)号:US20230178584A1
公开(公告)日:2023-06-08
申请号:US17841035
申请日:2022-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun KIM , Yong-Hee CHO , Yongsung KIM , Boeun PARK , Jeongil BANG , Jooho LEE
IPC: H01L49/02 , H01L27/108 , H01L31/0216 , C23C16/455 , C23C14/08 , C23C16/06 , C23C14/34 , C23C28/00
CPC classification number: H01L28/56 , H01L27/10808 , H01L31/02167 , C23C16/45527 , C23C14/088 , C23C16/06 , C23C14/3414 , C23C28/32 , C23C28/3455
Abstract: Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.
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公开(公告)号:US20230131035A1
公开(公告)日:2023-04-27
申请号:US18085939
申请日:2022-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungju RYU , Hyungjun KIM , Jae-Joon KIM
Abstract: Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number of digits of the addition result depending on a shift value to generate a shifted addition result, and an accumulator generating output feature data based on the shifted addition result.
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公开(公告)号:US20230089993A1
公开(公告)日:2023-03-23
申请号:US17526857
申请日:2021-11-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seungyeon KWAK , Hyungjun KIM , Myungsun SIM , Kum Hee LEE , Sunghun LEE , Jeoungin YI , Byoungki Choi , Kyuyoung Hwang
IPC: H01L51/50
Abstract: Provided are a light-emitting device and an electronic apparatus including the same, the light-emitting device including: a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode. The emission layer includes i) a first emission layer and ii) a second emission layer located between the first emission layer and the second electrode, the first emission layer is in direct contact with the second emission layer, the first emission layer includes a dopant, a first hole-transporting compound, and a first compound, the second emission layer includes a dopant, a second hole-transporting compound, and a second compound, the dopant included in the first emission layer and the dopant included in the second emission layer are identical to each other, the first compound and the second compound are different from each other, and an absolute value of the difference between a HOMO energy level of the second hole-transporting compound and a HOMO energy level of the second compound is about 0.3 eV or less.
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公开(公告)号:US20220102654A1
公开(公告)日:2022-03-31
申请号:US17229659
申请日:2021-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeoungin YI , Byungjoon KANG , Sangdong KIM , Hyungjun KIM , Yong Joo LEE , Byoungki CHOI , Youngki HONG , Kyuyoung HWANG
Abstract: Provided are an organometallic compound, an organic light-emitting device including the organometallic compound, and an electronic apparatus including the organic light-emitting device, in which the organometallic compound may be represented by Formula 1-1: wherein Formula 1-1 may be understood by referring to the description of Formula 1-1 provided herein.
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公开(公告)号:US20210292645A1
公开(公告)日:2021-09-23
申请号:US17108310
申请日:2020-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jongwon CHUNG , Hyungjun KIM , Byunghwa SEO , YongChul KIM
Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.
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