SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
    21.
    发明申请
    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体封装及其制造方法

    公开(公告)号:US20140327155A1

    公开(公告)日:2014-11-06

    申请号:US14134589

    申请日:2013-12-19

    Abstract: A semiconductor package comprises a lower package comprising a lower substrate, a lower semiconductor chip mounted on a surface of the lower substrate, connection terminals between the lower substrate and the lower semiconductor chip, and a protection film covering the lower semiconductor chip. An upper package is spaced apart from the lower package on an upper surface of the lower substrate, the upper package comprising an upper substrate and an upper semiconductor chip. Connections are present between the lower substrate and the upper substrate to horizontally surround the lower semiconductor chip. A molding film is on the upper surface of the lower substrate to fill spaces between the connection terminals and the connections. An uppermost surface of the protection film is positioned at substantially a same vertical level as an uppermost surface of the molding film and is spaced apart from the upper package.

    Abstract translation: 半导体封装包括下封装,其包括下基板,安装在下基板的表面上的下半导体芯片,下基板和下半导体芯片之间的连接端子以及覆盖下半导体芯片的保护膜。 上封装在下基板的上表面上与下封装隔开,上封装包括上基板和上半导体芯片。 连接存在于下基板和上基板之间以水平地围绕下半导体芯片。 成型膜位于下基板的上表面上,以填充连接端子和连接件之间的空间。 保护膜的最上表面位于与成型膜的最上表面大致相同的垂直高度,并且与上包装件间隔开。

    NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
    22.
    发明申请
    NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US20140273495A1

    公开(公告)日:2014-09-18

    申请号:US14293346

    申请日:2014-06-02

    Abstract: A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.

    Abstract translation: 非易失性存储器件包括衬底,衬底上的控制栅极电极和控制栅电极与衬底之间的电荷存储区域。 控制栅极掩模图案位于控制栅电极上,控制栅极电极包括控制基极栅极和控制基极栅极上的控制金属栅极。 控制金属栅极的宽度小于控制栅极掩模图案的宽度。 位于控制栅掩模图案和控制基栅之间的控制金属栅极的侧壁处具有抗氧化间隔物。

    METHOD FOR SETTING OPTIONS AND USER DEVICE ADAPTED THERETO
    23.
    发明申请
    METHOD FOR SETTING OPTIONS AND USER DEVICE ADAPTED THERETO 有权
    用于设置选项和用户设备的方法

    公开(公告)号:US20130205131A1

    公开(公告)日:2013-08-08

    申请号:US13760506

    申请日:2013-02-06

    Abstract: A method and device for a user to intuitively and simply alter the setting of options of an application that is being executed in a user device by detecting interactions via a sensor module during execution of a specific mode, identifying an option corresponding to a detected interaction, altering an option setting value of the identified option according to a detected interaction, and displaying the altered option setting value and storing the option of the specific mode with the altered option setting value.

    Abstract translation: 一种用户的方法和设备,用于通过在特定模式的执行期间检测经由传感器模块的交互来识别与检测到的交互相对应的选项,直观地且简单地改变正在用户设备中执行的应用的选项的设置, 根据检测到的交互来改变所识别的选项的选项设置值,并且显示改变的选项设置值并且存储具有改变的选项设置值的特定模式的选项。

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