摘要:
A semiconductor device for image sensing and printing comprises an integrated circuit composed of a single semiconductor substrate on which are integrated a linear array of phototransistors, driving circuits and control circuits. The control circuits are operable in a read mode for processing output signals from the phototransistors to enable transmission thereof to an external device and are operable in a print mode for processing inputted image data signals to produce printing signals which are applied to the driving circuits for use in driving an external printing device.
摘要:
A photo-electro conversion sensor of the image sensor is covered with a single layer passivation film or a multi-layer passivation film composed of plural layers having the substantially same refractive indexes, and the thickness of the passivation film is arranged some ten times as much as the wavelength of incident light so as to eliminate interference.
摘要:
To eliminate a residual image due to residual charge in an image sensor circuit and provide an effective bright-time output, the image sensor is provided with a reset switch connected to a photodiode. After the potential of the photodiode is held through a first amplifier in two holding circuits as an image signal and an initial signal, the initial signal and the image signal are sequentially output through a second amplifier. By resetting the photodiode to a desired potential to produce an initial signal, a residual image can be eliminated.
摘要:
A light receiving element is provided with a phototransistor and a light receiving MOS diode proximate thereto and having a gate electrode covering a portion of the base region of the phototransistor. The gate electrode permits transmission of a portion of received light. The light receiving MOS diode forms an inversion layer in a substrate adjacent the base of a phototransistor during the time photo charges are stored, and generated photo charges are stored in the inversion region and the base region of the phototransistor. During the storage state, the potential of the inversion region and the base region of the phototransistor is limited, so that the intensity of an electric field applied to an insulating film between the electrode and the semiconductor substrate is 0.7 MV/cm or less. Alternatively, the potential of the electrode in a waiting state is fixed or made floating, so that an electric field is not applied, and recombination at the surface of the semiconductor substrate is made stable.
摘要:
The image sensor is comprised of an array of operative bipolar transistors. Another array of optically shielded dummy bipolar transistors are formed adjacently to the operative bipolar transistors. Reset switches are connected to base regions of the operative and dummy bipolar transistors so as to reduce variation in dark image output, to ensure linearity of output signal, and to eliminate image storage.
摘要:
A photo-detecting element is covered with a passivation film having an uneven surface to avoid multi-reflection for the monochromatic incident light. The uneven film transmits the same intensity of incident light even if the mean thickness of uneven film is not constant over the entire surface of a semiconductor substrate.
摘要:
A linear image sensor comprises linear image sensor ICs each having light receiving elements arranged according to a preselected resolution level for outputting output signals in accordance with an amount of light received. Switch elements interconnect output terminals of adjacent two or more of the light receiving elements for switching between the preselected resolution level of the light receiving elements to at least one other resolution level constituting a fraction of the preselected resolution level. First amplifier circuits are is connected to output terminals of the light receiving elements. Sample and hold circuits temporarily hold outputs of the first amplifier circuits. Second amplifier circuits are connected to output terminals of the sample and hold circuits. Reading switch elements read outputs of the second amplifier circuits. Scanning circuits control the reading switch elements.
摘要:
The invention provides a photoelectric converter capable of reducing a random noise. The photoelectric converter includes: a photoelectric conversion unit having an output terminal connected to input terminals of a reset unit and an amplification unit; a hold unit for holding a reference signal generated through resetting of the output terminal of the photoelectric conversion unit; and a signal read unit for reading out to a common signal line the reference signal and an optical signal obtained after storage of electric charges generated on the basis of light made incident to a photoelectric conversion area of the photoelectric conversion unit.
摘要:
The present disclosure relates to a color image reading device that successively switches three color light sources to irradiate the color original copy and successively reads information on the original using a monochrome image sensor, and which is featured by simple construction and less reading time period. A plurality of image sensor ICs are linearly mounted. A start pulse output terminal of an anterior stage image sensor IC is connected to a start pulse input terminal of a posterior stage image sensor IC, thereby forming an image sensor block. A plurality of those image sensor blocks are provided such that start pulse input terminals of initial stage image sensor ICs in all blocks are connected together. By inputting start pulses to the terminals connected together, image signal outputs are read out simultaneously.
摘要:
A voltage at an output terminal of a photodiode is reset to a fixed voltage and an output signal of the photodiode and a dummy signal matching a dark output signal is output by a dummy photodiode comprising an identical component as that of the photodiode. The voltage difference between an input side and an output side of an amplifier is made to match the difference between a reset voltage of the photodiode and a reset voltage of a common signal line and a reset voltage of an output terminal to optimize the size of a MOS transistor forming the amplifier. The offset voltage is set to a constant which does not depend on the size of the MOS transistor. The amplifier is formed with CMOS devices and is selectively operated only during an output operation to suppress the current consumption.