公开(公告)号：US20160190273A1

公开(公告)日：2016-06-30

申请号：US15066018

申请日：2016-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Hiroshi FUJIKI ,  Hiromichi GODO ,  Yasumasa YAMANE

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

Abstract translation: 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。

公开(公告)号：US20150318359A1

公开(公告)日：2015-11-05

申请号：US14660000

申请日：2015-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Chiho KAWANABE

IPC: H01L29/24 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01B1/08 ,  H01L27/1225

Abstract: A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the film and the position of the electron beam are relatively moved. The electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas. The sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%. The first electron diffraction patterns account for 50% or more. The first electron diffraction pattern includes observation points that are not symmetry or observation points disposed in a circular pattern. The second electron diffraction pattern includes observation points corresponding to the vertices of a hexagon.

Abstract translation: 提供了具有良好电气特性的半导体器件。 在氧化物半导体膜中，以这样的方式观察多个电子衍射图案，使得形成氧化物半导体膜的表面用半宽度为1nm的探针直径的电子束照射，同时， 膜和电子束的位置相对移动。 电子衍射图案包括在不同区域中观察到的50个或更多个电子衍射图。 第一电子衍射图的百分比和第二电子衍射图的百分比之和为100％。 第一电子衍射图案占50％以上。 第一电子衍射图案包括不对称的观察点或以圆形图案设置的观察点。 第二电子衍射图包括对应于六边形顶点的观察点。

公开(公告)号：US20250063762A1

公开(公告)日：2025-02-20

申请号：US18936334

申请日：2024-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20240130163A1

公开(公告)日：2024-04-18

申请号：US18276075

申请日：2022-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Ryota HODO

IPC: H10K59/122 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K39/34 ,  H10K59/1201

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer. The first sidewall is provided to cover at least part of a side surface of the first pixel electrode, a side surface of the first light-emitting layer, a side surface of the first intermediate layer, and a side surface of the second light-emitting layer. A second sidewall is provided to cover at least part of a side surface of the second pixel electrode and a side surface of the light-receiving layer.

公开(公告)号：US20240114755A1

公开(公告)日：2024-04-04

申请号：US18236965

申请日：2023-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nozomu SUGISAWA ,  Yasumasa YAMANE ,  Daiki NAKAMURA ,  Tsunenori SUZUKI ,  Naoto GOTO ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K59/12

CPC classification number: H10K59/8793 ,  H10K59/1201

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode. The first layer and the second layer use a material having a first spin density and a material having a second spin density higher than the first spin density, respectively, each observed with an electron spin resonance (ESR) spectrometer when the material is in a film state.

公开(公告)号：US20240065054A1

公开(公告)日：2024-02-22

申请号：US18270767

申请日：2022-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Hajime KIMURA ,  Tatsuya ONUKI

IPC: H10K59/131 ,  H10K50/17 ,  H10K71/16 ,  H10K71/60

CPC classification number: H10K59/131 ,  H10K50/171 ,  H10K71/166 ,  H10K71/60

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer; a light-emitting element and a first conductive layer over the first insulating layer; a first layer over the first conductive layer; a second conductive layer over the first layer; a second insulating layer over the light-emitting element, the second conductive layer, and the first insulating layer; and a third conductive layer over the second insulating layer. The light-emitting element includes a fourth conductive layer, a second layer over the fourth conductive layer, a third layer over the second layer, and a fifth conductive layer over the third layer. The third conductive layer includes a region in contact with the second conductive layer through a first opening formed in the second insulating layer and a region in contact with the fifth conductive layer through a second opening formed in the second insulating layer; the second layer contains a light-emitting compound; the first conductive layer and the fourth conductive layer contain the same material; the first layer and the third layer contain the same material; and the second conductive layer and the fifth conductive layer contain the same material.

公开(公告)号：US20240057453A1

公开(公告)日：2024-02-15

申请号：US18260818

申请日：2022-01-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Yasumasa YAMANE

IPC: H10K59/80 ,  H10K59/12

CPC classification number: H10K59/874 ,  H10K59/873 ,  H10K59/1201

Abstract: A highly reliable display device is provided. The display device including a light-emitting element and an insulating layer placed to cover the light-emitting element and the light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer and the insulating layer includes a first layer, a second layer over the first layer, and a third layer over the second layer and the first layer has a function of capturing or fixing at least one of water and oxygen, the second layer has a function of inhibiting diffusion of at least one of water and oxygen, and the third layer has a higher concentration of carbon than at least one of the first layer and the second layer.

公开(公告)号：US20240057428A1

公开(公告)日：2024-02-15

申请号：US18270757

申请日：2022-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Hajime KIMURA ,  Tatsuya ONUKI

IPC: H10K59/35 ,  H10K71/60 ,  H10K71/16 ,  H10K50/19

CPC classification number: H10K59/353 ,  H10K71/60 ,  H10K71/166 ,  H10K50/19

Abstract: A high-resolution or high-definition display device is provided. The display device is manufactured by forming a first pixel electrode and a second pixel electrode; forming a first layer over the first pixel electrode and the second pixel electrode; forming a first sacrificial layer over the first layer; processing the first layer and the first sacrificial layer to expose at least part of the second pixel electrode; forming a second layer over the first pixel electrode and the second pixel electrode; forming a second sacrificial layer over the second layer; processing the second layer and the second sacrificial layer to expose at least part of the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; forming a third layer over the first pixel electrode and the second pixel electrode; forming a counter electrode over the third layer; and processing the third layer and the counter electrode to remove at least part of each of the third layer and the counter electrode included in a region between the first pixel electrode and the second pixel electrode in a top view.

公开(公告)号：US20220375938A1

公开(公告)日：2022-11-24

申请号：US17772423

申请日：2020-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Yasumasa YAMANE ,  Shuhei NAGATSUKA ,  Takashi HAMADA ,  Hiroki KOMAGATA

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

公开(公告)号：US20220173246A1

公开(公告)日：2022-06-02

申请号：US17437439

申请日：2020-03-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi YANAGISAWA ,  Yasumasa YAMANE

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/108 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an insulator including an excess-oxygen region, a metal oxide over the insulator, a first oxide semiconductor over the metal oxide, a first conductor in contact with the first oxide semiconductor, a second conductor in contact with the first oxide semiconductor, and a second oxide semiconductor in contact with the first oxide semiconductor and the insulator. The metal oxide contains an element having lower Gibbs energy of formation in an Ellingham diagram than a metal element contained in the first oxide semiconductor, and a region where the first oxide semiconductor and the second oxide semiconductor are in contact with each other is positioned between the first conductor and the second conductor.