公开(公告)号：US20060151010A1

公开(公告)日：2006-07-13

申请号：US11188759

申请日：2005-07-26

申请人： Si Jeon ,  Tae Lee ,  Young Park

发明人： Si Jeon ,  Tae Lee ,  Young Park

IPC分类号： B08B3/04 ,  B08B3/00

CPC分类号： A47L15/4204 ,  A47L15/4225

摘要： A drive unit for dish washing machines includes solid waste chambers with bottom surfaces that are stepped. One of the solid waste chambers has an inlet/outlet port. The solid waste chambers are inclined downward toward the inlet/outlet port. Consequently, filtering capacity is increased, and discharge of solid waste is facilitated.

公开(公告)号：US20060130878A1

公开(公告)日：2006-06-22

申请号：US11297377

申请日：2005-12-09

申请人： Tae Lee ,  Sang Yoon ,  Byung Choi ,  Yang Chung

发明人： Tae Lee ,  Sang Yoon ,  Byung Choi ,  Yang Chung

IPC分类号： B08B7/04 ,  B08B3/00 ,  B08B3/04

CPC分类号： A47L15/4204 ,  A47L15/0049 ,  A47L15/4225 ,  A47L2401/10 ,  A47L2401/14 ,  A47L2401/34 ,  A47L2501/01 ,  A47L2501/02 ,  A47L2501/06 ,  A47L2501/26 ,  A47L2501/30

摘要： A dish washer includes a sump communicated with a tub to accommodate water, a water supply pump for pumping the water in the sump, a filtering device for receiving a part of the water pumped through an auxiliary passageway to filter the pumped water and to supply the filtered water to the sump again, and a bypass for bypassing the water to be supplied to the filtering device to the tub or the sump when the filtering device is blocked by sewage. The bypass includes a first sensor detecting water passing therethrough and the filtering device being blocked and transmitting the detected result to a controller, and a second sensor detecting and informing the water pollution level to the controller when the filtering device is blocked. A controlling method thereof determines an algorithm of a cycle for washing or rinsing dishes using information acquired from the first and the second sensors.

摘要翻译： 洗碗机包括与水槽连通以容纳水的贮槽，用于抽吸贮槽中的水的供水泵，用于接收通过辅助通道泵送的一部分水以过滤抽水的过滤装置， 过滤水再次进入水槽，旁路旁路，用于在过滤装置被污水堵塞时绕过要供给到过滤装置的水到桶或贮槽。 旁路包括检测通过其中的水的第一传感器，并且过滤装置被阻挡并将检测结果传送到控制器;以及第二传感器，当过滤装置被阻挡时，检测并通知控制器的水污染等级。 其控制方法使用从第一和第二传感器获取的信息确定用于洗涤或漂洗餐具的循环的算法。

公开(公告)号：US20060040491A1

公开(公告)日：2006-02-23

申请号：US10923123

申请日：2004-08-21

申请人： Yeow Lim ,  Alex See ,  Tae Lee ,  David Vigar ,  Liang Hsia ,  Kin Pey

发明人： Yeow Lim ,  Alex See ,  Tae Lee ,  David Vigar ,  Liang Hsia ,  Kin Pey

IPC分类号： H01L21/4763

CPC分类号： H01L23/528 ,  H01L21/0276 ,  H01L21/288 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for slots in wide lines to reduce stress. An example embodiment method and structure for is an interconnect structure comprising: interconnect comprising a wide line. The wide line has a first slot. The first slot is spaced a first distance from a via plug so that the first slot relieves stress on the wide line and the via plug. The via plug can contact the wide line from above or below. Another example embodiment is a dual damascene interconnect structure comprising: an dual damascene shaped interconnect comprising a via plug, a first slot and a wide line. The wide line has the first slot. The first slot is spaced a first distance from the via plug so that the first slot relieves stress on the wide line and the via plug.

摘要翻译： 用于宽线槽以减少压力的方法和结构。 一种示例性实施例的方法和结构是一种互连结构，包括：包括宽线的互连。 宽线有第一个插槽。 第一槽与通孔塞隔开第一距离，使得第一槽减轻宽线和通孔塞上的应力。 通孔插头可以从上方或下方接触宽线。 另一个示例性实施例是双镶嵌互连结构，包括：双镶嵌形互连件，其包括通孔塞，第一槽和宽线。 宽线有第一个插槽。 第一槽与通孔塞隔开第一距离，使得第一槽减轻宽线和通孔塞上的应力。

公开(公告)号：US20060006380A1

公开(公告)日：2006-01-12

申请号：US11156489

申请日：2005-06-21

申请人： Jung Shin ,  Tae Lee ,  Bon Koo ,  Bang Lee ,  Sang Lee

发明人： Jung Shin ,  Tae Lee ,  Bon Koo ,  Bang Lee ,  Sang Lee

IPC分类号： H01L29/08

CPC分类号： H01L21/31133 ,  H01L21/0274 ,  H01L51/052

摘要： A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

摘要翻译： 一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。 还公开了使用该组合物形成有机绝缘膜的图案的方法。 由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

公开(公告)号：US20060003573A1

公开(公告)日：2006-01-05

申请号：US11174805

申请日：2005-07-05

申请人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Boon Tan ,  Alan Cuthbertson ,  Chin Neo

发明人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Boon Tan ,  Alan Cuthbertson ,  Chin Neo

IPC分类号： H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/76829 ,  H01L21/76834

摘要： An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.

摘要翻译： 对准的双镶嵌开口结构，包括以下。 具有形成在其上的金属结构的结构。 金属结构上的图案层叠层; 所述层堆叠按升序包括：图案化的底部蚀刻停止层; 图案化的下介电材料层; 图案化的中间蚀刻停止层; 和图案化的中间介电材料层; 下部和中间介电层由相同的材料组成。 在图案化的底部蚀刻停止层和图案化的下部介电材料层中的上部沟槽开口; 以及图案化的中间蚀刻停止层和图案化的中间介电材料层中的下通孔开口。 下通道开口与上沟槽开口连通。 其中上沟槽开口和下通孔开口包括对准的双镶嵌开口。

公开(公告)号：US20050237022A1

公开(公告)日：2005-10-27

申请号：US11113171

申请日：2005-04-25

申请人： Dong Kim ,  Byoung Min ,  Byung Choi ,  Tae Lee

发明人： Dong Kim ,  Byoung Min ,  Byung Choi ,  Tae Lee

IPC分类号： H02P25/04 ,  H02P27/06 ,  H02P5/06

CPC分类号： H02P25/04

摘要： A variable speed motor includes first and second main windings wound on a stator, and a relay for performing a switching operation between serial/parallel connections of the first and second main windings to control motor speed. The variable speed motor further includes a tap winding connected in series to the main windings, or an additional capacitor, such that it can greatly extend the range of a variable speed without using a drive unit capable of changing the motor speed at an external location, resulting in reduced production costs of the motor, reduced electromagnetic vibration noise, and reduced power consumption.

摘要翻译： 变速电动机包括缠绕在定子上的第一和第二主绕组以及用于在第一和第二主绕组的串联/并联连接之间执行开关操作以控制电动机速度的继电器。 变速电动机还包括与主绕组串联连接的抽头绕组或附加电容器，使得其可以在不使用能够改变外部位置处的电动机速度的驱动单元的情况下大大地扩展可变速度的范围， 导致电机的生产成本降低，电磁振动噪声降低，功耗降低。

公开(公告)号：US20050167824A1

公开(公告)日：2005-08-04

申请号：US10768796

申请日：2004-01-30

申请人： Fan Zhang ,  Kho Chok ,  Tae Lee ,  Xiaomei Bu ,  Meng Luo ,  Chian Sin ,  Yee Foong ,  Luona Goh ,  Liang Hsia ,  Huey Chong

发明人： Fan Zhang ,  Kho Chok ,  Tae Lee ,  Xiaomei Bu ,  Meng Luo ,  Chian Sin ,  Yee Foong ,  Luona Goh ,  Liang Hsia ,  Huey Chong

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/04 ,  H01L23/31 ,  H01L23/58 ,  H01L27/04

CPC分类号： H01L23/585 ,  H01L23/3192 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.

摘要翻译： 制造集成电路的方法提供了具有半导体器件的衬底，并且包括在衬底和半导体器件上形成金属间电介质层。 金属线形成在半导体器件的上方并与之接触，并且在金属间电介质层之上形成钝化层。 形成与金属线连接的接合焊盘。 通过钝化层和金属间电介质层形成具有侧壁钝化层的保护护套，并且位于金属线和集成电路的外边缘之间。

公开(公告)号：US20050142988A1

公开(公告)日：2005-06-30

申请号：US10879030

申请日：2004-06-30

申请人： Chang Kim ,  Chi Kim ,  Tae Lee ,  Hi Kang

发明人： Chang Kim ,  Chi Kim ,  Tae Lee ,  Hi Kang

IPC分类号： H01L21/304 ,  B24B37/04 ,  B24B49/00 ,  B24B1/00

CPC分类号： B24B37/042

摘要： A CMP process using a slurry containing an abrasive of low concentration is disclosed. More specifically, a planarization process is performed using the slurry containing an abrasive of low concentration of less than 0.1 wt % unlike the conventional CMP slurry, thereby improving uniformity of a CMP process in a manufacture process of a semiconductor device to secure yield and reliability of the device. Particularly, since the disclosed slurry has the more excellent effect of achieving the planarization degree than that of the conventional slurry, the thickness of deposited films before the CMP process can be reduced, and the CMP amount can also be minimized.

摘要翻译： 公开了使用含有低浓度磨料的浆料的CMP方法。 更具体地，使用含有少于0.1重量％的低浓度的研磨剂的浆料进行平坦化处理，这与传统的CMP浆料不同，从而提高半导体器件的制造过程中的CMP工艺的均匀性，以确保半导体器件的成品率和可靠性 装置。 特别地，由于所公开的浆料具有比常规浆料获得更好的平坦化度的优异效果，所以可以减少在CMP工艺之前的沉积膜的厚度，并且还可以使CMP量最小化。

公开(公告)号：US20050127495A1

公开(公告)日：2005-06-16

申请号：US10734423

申请日：2003-12-12

申请人： Fan Zhang ,  Bei Zhang ,  Wuping Liu ,  Kho Chok ,  Liang Hsia ,  Tae Lee ,  Juan Tan ,  Xian Wang

发明人： Fan Zhang ,  Bei Zhang ,  Wuping Liu ,  Kho Chok ,  Liang Hsia ,  Tae Lee ,  Juan Tan ,  Xian Wang

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/04 ,  H01L21/4763

CPC分类号： H01L23/562 ,  H01L23/3178 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The “oxide ring” of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.

摘要翻译： 根据本发明的目的，以“氧化物环”的形式提供了一种用于实施本发明的新设计和方法。 传统的模具设置有保护环或密封环，其围绕并隔离单个半导体管芯的有源表面积。 本发明的“氧化物环”围绕保护环或密封环，并以这种方式形成在管芯的锯切路径和单个化的半导体管芯的有源表面区域之间的机械应力释放缓冲器。

公开(公告)号：US20050111999A1

公开(公告)日：2005-05-26

申请号：US10805672

申请日：2004-03-19

申请人： Tae Lee

发明人： Tae Lee

IPC分类号： F04B39/00 ,  F04B17/04 ,  F04B35/04 ,  F04B17/00

CPC分类号： F04B35/045

摘要： The present invention relates to a linear compressor. In the linear compressor, a holder 31b is combined with a cylinder 22 in an interlocking fashion by forming a first threaded part 31c on an inner surface of the holder 31b, the outer side of which on an inner core 31a is mounted, and a second threaded part 22b on an outer surface of the cylinder 22 to correspond to the first threaded part 31c. That is, screws are not required when the cylinder 22 and the holder 31b are combined with each other, thus preventing the cylinder 22 from being deformed by a fastening torque of the screws.

摘要翻译： 线性压缩机技术领域本发明涉及一种线性压缩机。 在线性压缩机中，保持器31b通过在保持器31b的内表面上形成第一螺纹部31c而以互锁方式与气缸22组合，其外侧安装在内芯31a上 ，以及在气缸22的外表面上的第二螺纹部分22b，以对应于第一螺纹部分31c。 也就是说，当气缸22和保持器31b彼此组合时，不需要螺钉，从而防止气缸22被螺钉的紧固扭矩变形。