公开(公告)号：US6058723A

公开(公告)日：2000-05-09

申请号：US257716

申请日：1999-02-25

申请人： Atsushi Kusunoki ,  Shigeru Niki ,  Takuya Kishimoto

发明人： Atsushi Kusunoki ,  Shigeru Niki ,  Takuya Kishimoto

IPC分类号： F25D11/02 ,  F25D17/06 ,  F25D21/00 ,  F25D21/08 ,  F25D29/00

CPC分类号： F25D29/00 ,  F25D17/065 ,  F25D21/002 ,  F25B2600/2511 ,  F25B2700/2117 ,  F25D11/022 ,  F25D2317/0682 ,  F25D2317/0684 ,  F25D2400/04 ,  F25D2700/12 ,  F25D2700/122

摘要： There is provided a refrigerator capable of suppressing intra-compartment temperature from rising during a defrosting operation by means of a defrosting heater and capable of preventing temperature of foods from rising after the defrosting operation. The inventive refrigerator sets temperature for ending a freezing mode during a pre-cooling operation at pre-cooling freezing mode ending temperature which is lower than temperature during a normal operation by a predetermined temperature and conducts an alternate cooling operation until when the pre-cooling operation ends based on the pre-cooling freezing mode ending temperature.

摘要翻译： 提供了一种能够通过除霜加热器在除霜操作期间抑制室内温度升高并且能够防止食物在除霜操作之后上升的冰箱。 本发明的冰箱将在预冷冻操作期间结束冷冻模式的温度设定为在正常操作期间比预定温度低的温度的预冷冻冷冻模式结束温度，并且进行替代冷却操作，直到预冷操作 基于预冷冻模式结束温度结束。

公开(公告)号：US08921691B2

公开(公告)日：2014-12-30

申请号：US12922996

申请日：2009-03-19

申请人： Shogo Ishizuka ,  Shigeru Niki ,  Nobuaki Kido ,  Hiroyuki Honmoto

发明人： Shogo Ishizuka ,  Shigeru Niki ,  Nobuaki Kido ,  Hiroyuki Honmoto

IPC分类号： H01L31/0336 ,  H01L31/0392

CPC分类号： H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.

摘要翻译： 提供了一种太阳能电池，其中下电极层，具有包含第Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的光电转换层和上电极层依次形成在 衬底，其中所述太阳能电池在所述衬底和所述下电极层之间设置有硅酸盐层。

公开(公告)号：US08592933B2

公开(公告)日：2013-11-26

申请号：US12937013

申请日：2009-03-30

申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

IPC分类号： H01L31/00

CPC分类号： H01L27/14645 ,  H01L31/0322

摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

公开(公告)号：US20100102368A1

公开(公告)日：2010-04-29

申请号：US12525357

申请日：2008-02-01

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).

摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24） 光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。

公开(公告)号：US20090301558A1

公开(公告)日：2009-12-10

申请号：US12084294

申请日：2006-10-31

申请人： Masaki Takaoka ,  Osamu Matsushima ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

发明人： Masaki Takaoka ,  Osamu Matsushima ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0749 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/022466 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer.

摘要翻译： 光电转换器包括下电极层，用作光吸收层的黄铜矿结构的化合物半导体薄膜和依次层压在基板上的透光电极层。 化合物半导体薄膜的端部位于透光电极层的端部的外侧。

公开(公告)号：US20070125119A1

公开(公告)日：2007-06-07

申请号：US10569645

申请日：2004-08-25

申请人： Yoshiro Naemura ,  Shigeru Niki ,  Kunio Nii ,  Yasushi Takagi ,  Ryousuke Yamamoto ,  Kosaku Adachi ,  Koji Mishima

发明人： Yoshiro Naemura ,  Shigeru Niki ,  Kunio Nii ,  Yasushi Takagi ,  Ryousuke Yamamoto ,  Kosaku Adachi ,  Koji Mishima

IPC分类号： F25D11/00 ,  F25B39/04

CPC分类号： F25D23/006 ,  F25D21/14 ,  F25D23/003 ,  F25D29/005 ,  F25D2400/04 ,  F25D2500/02

摘要： A refrigerator stated is characterized in that it includes a machine room (14) formed on a lower part of a rear of a main body of the refrigerator; a refrigerant compressor (12) installed offset to one side in the machine room (14) in a width direction; and a cooler (9) for receiving a refrigerant from the refrigerant compressor (12) and cooling an inside of a storage chamber; wherein the cooler (9) is arranged inside the refrigerator via a heat insulating wall (3a) of the main body above the refrigerant compressor (12) arranged on one side of the machine room (14) and at a position on an opposite side of the refrigerant compressor (12) in a width direction; and control and power source boards (21) of the refrigerator are arranged in another wide space of the refrigerant compressor (12) in the machine room (14) in a width direction. As described above, a refrigerator is provided which, by changing the position relationship and structure of the cooler (9), the refrigerant compressor (12), and the control and power source boards (21), can reduce the thermal loss of the cooler (9), improve the heat insulation efficiency, and increase the heat radiation efficiency of the machine room (14) and a condenser (13), and thereby can obtain a power conservation effect.

摘要翻译： 一种冰箱，其特征在于，它包括形成在冰箱主体后部的下部的机房（14） 制冷剂压缩机（12），其在宽度方向上偏置到机房（14）的一侧; 以及用于从制冷剂压缩机（12）接收制冷剂并冷却储藏室内部的冷却器（9） 其中，所述冷却器（9）经由设置在所述机器室（14）的一侧的所述制冷剂压缩机（12）的上方的所述主体的隔热壁（3a）配置在所述冰箱内部，并且位于相对侧的位置 的制冷剂压缩机（12）的宽度方向; 冰箱的控制电源板（21）在宽度方向上配置在机房（14）的制冷剂压缩机12的另一宽的空间中。 如上所述，通过改变冷却器（9）的位置关系和结构，制冷剂压缩机（12）以及控制和电源板（21），可以降低冷却器的热损失， （9），提高隔热效率，提高机房（14）和冷凝器（13）的散热效率，从而可以获得节能效果。

公开(公告)号：US20120199203A1

公开(公告)日：2012-08-09

申请号：US13449895

申请日：2012-04-18

申请人： Manabu Nishizawa ,  Yuichi Kuroki ,  Tatsuo Nagashima ,  Yasushi Kawamoto ,  Shigeru Niki ,  Shogo Ishizuka

发明人： Manabu Nishizawa ,  Yuichi Kuroki ,  Tatsuo Nagashima ,  Yasushi Kawamoto ,  Shigeru Niki ,  Shogo Ishizuka

IPC分类号： H01L31/032 ,  C03C3/087 ,  C03C3/093 ,  C03C3/085 ,  H01L31/02 ,  C03C3/091

CPC分类号： C03C3/093 ,  C03C3/085 ,  C03C3/087 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

摘要： Provided are a glass sheet for a CIGS solar cell which satisfies both of high power generation efficiency and high glass transition temperature, and a CIGS solar cell having high power generation efficiency. A glass sheet for a Cu—In—Ga—Se solar cell containing, in terms of mol % on the basis of the following oxides, 60 to 75% of SiO2, 3 to 10% of Al2O3, 0 to 3% of B2O3, 5 to 18% of MgO, 0 to 5% of CaO, 4 to 18.5% of Na2O, 0 to 17% of K2O, and 0% or more and less than 10% of SrO+BaO+ZrO2, wherein K2O/(Na2O+K2O) is 0 to 0.5, and the glass sheet has a glass transition temperature (Tg) of more than 550° C.

摘要翻译： 本发明提供一种能够满足高发电效率和高玻璃化转变温度的CIGS太阳能电池用玻璃板和具有高发电效率的CIGS太阳能电池。 一种用于Cu-In-Ga-Se太阳能电池的玻璃板，其以以下氧化物为基准的摩尔％含有60〜75％的SiO 2，3〜10％的Al 2 O 3，0〜3％的B 2 O 3， 5〜18％的MgO，0〜5％的CaO，4〜18.5％的Na2O，0〜17％的K2O，0％以上且小于10％的SrO + BaO + ZrO2，其中K2O /（Na2O + K 2 O）为0〜0.5，玻璃化转变温度（Tg）为550℃以上。

公开(公告)号：US20110024859A1

公开(公告)日：2011-02-03

申请号：US12937013

申请日：2009-03-30

申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14645 ,  H01L31/0322

摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

公开(公告)号：US06185948B1

公开(公告)日：2001-02-13

申请号：US09410038

申请日：1999-10-01

申请人： Shigeru Niki ,  Atsushi Kusunoki ,  Takuya Kishimoto

发明人： Shigeru Niki ,  Atsushi Kusunoki ,  Takuya Kishimoto

IPC分类号： F25B500

CPC分类号： F25D17/065 ,  F25B5/04 ,  F25B2600/021 ,  F25B2600/0251 ,  F25B2600/112 ,  F25B2600/2511 ,  F25D2317/0682 ,  F25D2400/04 ,  Y02B30/741 ,  Y02B30/743

摘要： A refrigerator-freezer includes a first evaporator cooling an atmosphere in a refrigerating compartment, a second evaporator cooling an atmosphere in a freezing compartment and a controller controlling a switching valve in a refrigerating cycle so that a cooling operation is switched between a first operation mode in which refrigerant compressed by a compressor is supplied at least to the first evaporator and a second operation mode in which the refrigerant compressed by the compressor is supplied at least to the second evaporator. The controller stops the compressor when a temperature in either one of the refrigerating and freezing compartments for which the cooling operation is unexecuted is below a predetermined upper limit temperature in a case where a temperature in the other compartment for which the cooling operation is in progress drops to a predetermined lower limit temperature.

摘要翻译： 一个冰箱 - 冷冻机包括冷却冷藏室中的气氛的第一蒸发器，冷冻室中的气氛的第二蒸发器和控制冷冻循环中的切换阀的控制器，以便在第一操作模式 由压缩机压缩的制冷剂至少被供给到第一蒸发器，以及第二操作模式，其中由压缩机压缩的制冷剂至少供应到第二蒸发器。 在冷却运转正在进行的其他隔室中的温度下降的情况下，控制器停止压缩机，其中在冷却运转未执行的冷藏运转的冷冻室和冷冻室中的任一个中的温度低于预定的上限温度 达到预定的下限温度。