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公开(公告)号：US20100102368A1
公开(公告)日：2010-04-29
申请号：US12525357
申请日：2008-02-01
申请人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
发明人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14632 , H01L27/14665 , H01L27/14687 , H01L31/0322
摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).
摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24） 光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。
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公开(公告)号：US20090301558A1
公开(公告)日：2009-12-10
申请号：US12084294
申请日：2006-10-31
CPC分类号： H01L31/0749 , H01L27/14643 , H01L27/14683 , H01L31/022466 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer.
摘要翻译： 光电转换器包括下电极层，用作光吸收层的黄铜矿结构的化合物半导体薄膜和依次层压在基板上的透光电极层。 化合物半导体薄膜的端部位于透光电极层的端部的外侧。
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公开(公告)号：US08299510B2
公开(公告)日：2012-10-30
申请号：US12525357
申请日：2008-02-01
申请人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
发明人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L31/18 , H01L27/14632 , H01L27/14665 , H01L27/14687 , H01L31/0322
摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.
摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层 半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。
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4.发明申请公开(公告)号：US20090217969A1
公开(公告)日：2009-09-03
申请号：US12084281
申请日：2006-10-31
IPC分类号： H01L31/00 , H01L31/0272
CPC分类号： H01L31/0322 , H01L27/14609 , H01L27/14692 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.
摘要翻译： 公开了一种用于制造光电转换器的方法，其中，通过光刻将每个图案化下层电极层，具有用作光吸收层的黄铜矿结构的化合物半导体薄膜和层叠以形成层的透光电极层， 从而最小化对化合物半导体薄膜的晶体的损害。
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5.发明申请公开(公告)号：US20110024859A1
公开(公告)日：2011-02-03
申请号：US12937013
申请日：2009-03-30
IPC分类号： H01L31/0232 , H01L27/146 , H01L31/18
CPC分类号： H01L27/14645 , H01L31/0322
摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.
摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。
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6.发明授权Photoelectric conversion device, fabrication method for the same, and solid state imaging device 失效光电转换装置及其制造方法以及固态成像装置公开(公告)号：US08592933B2
公开(公告)日：2013-11-26
申请号：US12937013
申请日：2009-03-30
IPC分类号： H01L31/00
CPC分类号： H01L27/14645 , H01L31/0322
摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.
摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。
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公开(公告)号：US20100295145A1
公开(公告)日：2010-11-25
申请号：US12781850
申请日：2010-05-18
申请人： Kenichi Miyazaki , Osamu Matsushima
发明人： Kenichi Miyazaki , Osamu Matsushima
IPC分类号： H01L31/105 , H01L31/18 , H01L31/0264
CPC分类号： H01L31/0322 , H01L31/0336 , H01L31/105 , H01L31/109 , Y02E10/541
摘要： A light-absorbing layer is composed of a compound-semiconductor film of charcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of charcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.
摘要翻译： 光吸收层由正铁矿结构的化合物半导体膜构成，表面层设置在光吸收层上，表面层具有比化合物半导体膜更高的带隙能量，上电极层为 配置在表面层上，下电极层设置在与上电极层相对的光吸收层的背面，上电极层和下电极层之间施加反向偏压，以检测电 在化合物半导体膜中通过光电转换产生的电荷由于光电转换而产生的电荷乘以冲击电离，而电荷的冲击电离的乘积是通过向高锰酸盐半导体施加高强度电场而引起的 结构，允许改善的暗电流特性，以及即使在低光的检测中也提高了效率 内生强度，S / N比提高。
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公开(公告)号：US06402011B1
公开(公告)日：2002-06-11
申请号：US09633293
申请日：2000-08-04
申请人： Masahiro Taniguchi , Kazumi Ishimoto , Koichi Nagai , Osamu Yamazaki , Tatsuaki Kitagawa , Osamu Matsushima , Kazuhiro Uji , Seizo Nemoto
发明人： Masahiro Taniguchi , Kazumi Ishimoto , Koichi Nagai , Osamu Yamazaki , Tatsuaki Kitagawa , Osamu Matsushima , Kazuhiro Uji , Seizo Nemoto
IPC分类号： B23K3102
CPC分类号： B23K3/085 , B23K1/008 , B23K2101/42 , H05K3/3415 , H05K3/3447 , H05K3/3494 , H05K2203/087 , H05K2203/304
摘要： For reflow soldering, radiant heating is applied to one surface of a printed circuit board on which electronic components are placed and onto which cream solder is supplied and at the same time hot air is blown locally and roughly perpendicular to to-be-connected points on said one surface of the printed circuit board. This reflow method permits secure soldering even if the hot air is set at a temperature not exceeding the heat resistance of the electronic components, which is possilbe because of its combination with the radiant heat. Moreover, this reflow method can permit soldering in such a manner that only the to-be-connected points are heated selectively, because the hot air is blown locally and roughly perpendicular to the points to be connected. Thus, this reflow method prevents heat damage to other sections than the to-be-connected points and ensures that the solder at the to-be-connected points is melted.
摘要翻译： 对于回流焊接，辐射加热被施加到印刷电路板的放置电子部件的一个表面上，并且在其上供应奶油焊膏，并且同时热空气局部地被吹送并大致垂直于待连接点 所述印刷电路板的一个表面。 这种回流方法即使热空气被设定在不超过电子部件的耐热性的温度下，由于与辐射热的组合，所以能够进行安全的焊接。 此外，这种回流方法可以以这样的方式允许焊接，即只有待连接点被选择性地加热，因为热空气局部地吹动并且大致垂直于要连接的点。 因此，这种回流方法可防止对待连接点的其他部分的热损伤，并确保待连接点处的焊料熔化。
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公开(公告)号：US5649219A
公开(公告)日：1997-07-15
申请号：US708884
申请日：1996-09-04
申请人： Osamu Matsushima
发明人： Osamu Matsushima
IPC分类号： G06F15/78 , G06F11/26 , G06F11/273 , G06F11/00
CPC分类号： G06F11/261 , G06F11/2733
摘要： In a microcomputer with built-in SOG region system debugging is made possible using a gate array provided outside the microcomputer by supplying signals transferred between a CPU and the gate array to external terminals used for transferring signals between the interior of the microcomputer and a peripheral device outside the microcomputer. In order to supply necessary signals to the gate array connected to the external terminals, a selection circuit which outputs signals between CPU and the SOG region to the external terminals by means of a mode switching signal is provided. By the provision of the selection circuit, it becomes possible to output the signals between the CPU and the SOG region to the external terminals by switching, and to transmit the signals of CPU to the gate array provided outside the microcomputer. Accordingly, it becomes possible to debug the system using the gate array provided outside the microcomputer.
摘要翻译： 在具有内置SOG区域的微型计算机中，通过将在CPU和门阵列之间传送的信号提供给外部终端，用于在微计算机的内部和外围设备之间传送信号，使用在微计算机外部提供的门阵列可以进行调试 在微机外 为了向连接到外部端子的门阵列提供必要的信号，提供了通过模式切换信号将CPU和SOG区域之间的信号输出到外部端子的选择电路。 通过提供选择电路，可以通过切换将CPU和SOG区域之间的信号输出到外部端子，并将CPU的信号发送到设置在微型计算机外部的门阵列。 因此，可以使用设置在微计算机外部的门阵列来调试系统。
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公开(公告)号：US5208781A
公开(公告)日：1993-05-04
申请号：US704157
申请日：1991-05-22
申请人： Osamu Matsushima
发明人： Osamu Matsushima
CPC分类号： G06F1/3215 , G06F1/3275 , Y02B60/1225 , Y02B60/1228
摘要： A memory device includes a memory, an address latch, a built-in incrementer, and an address decoder. The address decoder has a mapping register which assigns the memory to a predetermined address. The address decoder further includes a standby signal producer which detects whether or not the address latch addresses an address specified by the mapping register and which sets the memory device to a standby state of a low power consumption when such is not detected. The memory device can be set to a standby state even when the memory device is connected to a microcomputer with a protocol by which an address of the memory is not outputted each time. This arrangement enables to save power consumption of the computer, to decrease the load of a power supply circuit in a microcomputer applied apparatus and to make the apparatus compact.
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