公开(公告)号：US20110024859A1

公开(公告)日：2011-02-03

申请号：US12937013

申请日：2009-03-30

申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14645 ,  H01L31/0322

摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

公开(公告)号：US08592933B2

公开(公告)日：2013-11-26

申请号：US12937013

申请日：2009-03-30

申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

IPC分类号： H01L31/00

CPC分类号： H01L27/14645 ,  H01L31/0322

摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

公开(公告)号：US20100102368A1

公开(公告)日：2010-04-29

申请号：US12525357

申请日：2008-02-01

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).

摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24） 光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。

公开(公告)号：US08299510B2

公开(公告)日：2012-10-30

申请号：US12525357

申请日：2008-02-01

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层 半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

公开(公告)号：US20090301558A1

公开(公告)日：2009-12-10

申请号：US12084294

申请日：2006-10-31

申请人： Masaki Takaoka ,  Osamu Matsushima ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

发明人： Masaki Takaoka ,  Osamu Matsushima ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0749 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/022466 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer.

摘要翻译： 光电转换器包括下电极层，用作光吸收层的黄铜矿结构的化合物半导体薄膜和依次层压在基板上的透光电极层。 化合物半导体薄膜的端部位于透光电极层的端部的外侧。

公开(公告)号：US20090217969A1

公开(公告)日：2009-09-03

申请号：US12084281

申请日：2006-10-31

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

IPC分类号： H01L31/00 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  H01L27/14609 ,  H01L27/14692 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.

摘要翻译： 公开了一种用于制造光电转换器的方法，其中，通过光刻将每个图案化下层电极层，具有用作光吸收层的黄铜矿结构的化合物半导体薄膜和层叠以形成层的透光电极层， 从而最小化对化合物半导体薄膜的晶体的损害。

公开(公告)号：US20100295145A1

公开(公告)日：2010-11-25

申请号：US12781850

申请日：2010-05-18

申请人： Kenichi Miyazaki ,  Osamu Matsushima

发明人： Kenichi Miyazaki ,  Osamu Matsushima

IPC分类号： H01L31/105 ,  H01L31/18 ,  H01L31/0264

CPC分类号： H01L31/0322 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/541

摘要： A light-absorbing layer is composed of a compound-semiconductor film of charcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of charcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

摘要翻译： 光吸收层由正铁矿结构的化合物半导体膜构成，表面层设置在光吸收层上，表面层具有比化合物半导体膜更高的带隙能量，上电极层为 配置在表面层上，下电极层设置在与上电极层相对的光吸收层的背面，上电极层和下电极层之间施加反向偏压，以检测电 在化合物半导体膜中通过光电转换产生的电荷由于光电转换而产生的电荷乘以冲击电离，而电荷的冲击电离的乘积是通过向高锰酸盐半导体施加高强度电场而引起的 结构，允许改善的暗电流特性，以及即使在低光的检测中也提高了效率 内生强度，S / N比提高。

公开(公告)号：US08378444B2

公开(公告)日：2013-02-19

申请号：US12781850

申请日：2010-05-18

申请人： Kenichi Miyazaki ,  Osamu Matsushima

发明人： Kenichi Miyazaki ,  Osamu Matsushima

IPC分类号： H01L29/76

CPC分类号： H01L31/0322 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/541

摘要： A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

摘要翻译： 光吸收层由黄铜矿结构的化合物半导体膜构成，表面层设置在光吸收层上，表面层具有比化合物半导体膜更高的带隙能量，上电极层为 配置在表面层上，下电极层设置在与上电极层相对的光吸收层的背面，上电极层和下电极层之间施加反向偏压，以检测电 在化合物半导体膜中，通过光电转换产生的电荷产生的电荷乘以冲击电离，而通过对黄铜矿的半导体施加高强度电场而引起电荷的冲击电离的乘积 结构，允许改善的暗电流特性，以及即使在低光的检测中也提高了效率 内生强度，S / N比提高。

公开(公告)号：US20100276738A1

公开(公告)日：2010-11-04

申请号：US12808757

申请日：2008-12-08

申请人： Osamu Matsushima ,  Kenichi Miyazaki

发明人： Osamu Matsushima ,  Kenichi Miyazaki

IPC分类号： H01L31/0232 ,  H01L31/0216

CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same.There are steps of having circuitry (30) formed on a substrate (10), forming a lower electrode layer (25) on the circuitry (30), patterning the lower electrode layer (25) to separate pixel-wise into a set of segments, forming a compound-semiconductor thin film of charcopyrite structure (24) over a whole area of element regions, applying a resist layer (27) on the compound-semiconductor thin film (24) to pixel-wise pattern in accordance with the lower electrode layer (25) as a base separated into the set of segments, applying an ion doping over a whole area of element regions, forming element separating regions (34) in the compound-semiconductor thin film (24), removing the resist layer (27) for exposure of surfaces of a set of compound-semiconductor thin films (24) pixel-wise separated by the element separating regions (34), and forming a transparent electrode layer (26) in a planarizing manner over a whole area of element regions.

摘要翻译： 提供具有减小的暗电流的平坦化结构的固态成像装置，其允许在从可见波长到近红外波长的宽波长带上的高灵敏度及其制造方法。 具有形成在基板（10）上的电路（30）的步骤，在电路（30）上形成下电极层（25），图案化下电极层（25），将其逐像分割成一组段 在元件区域的整个区域上形成氧化铬结构（24）的化合物半导体薄膜，将化合物半导体薄膜（24）上的抗蚀剂层（27）根据下部电极施加到像素图案 层（25）作为分隔成该组段的基底，在元件区域的整个区域上施加离子掺杂，在化合物半导体薄膜（24）中形成元件分离区域（34），去除抗蚀剂层（27） ），用于曝光由元件分离区域（34）以像素方式隔开的一组化合物半导体薄膜（24）的表面，并且在元件区域的整个区域上以平坦化方式形成透明电极层（26） 。

公开(公告)号：US08362527B2

公开(公告)日：2013-01-29

申请号：US12808757

申请日：2008-12-08

申请人： Osamu Matsushima ,  Kenichi Miyazaki

发明人： Osamu Matsushima ,  Kenichi Miyazaki

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same.There are steps of having circuitry (30) formed on a substrate (10), forming a lower electrode layer (25) on the circuitry (30), patterning the lower electrode layer (25) to separate pixel-wise into a set of segments, forming a compound-semiconductor thin film of chalcopyrite structure (24) over a whole area of element regions, applying a resist layer (27) on the compound-semiconductor thin film (24) to pixel-wise pattern in accordance with the lower electrode layer (25) as a base separated into the set of segments, applying an ion doping over a whole area of element regions, forming element separating regions (34) in the compound-semiconductor thin film (24), removing the resist layer (27) for exposure of surfaces of a set of compound-semiconductor thin films (24) pixel-wise separated by the element separating regions (34), and forming a transparent electrode layer (26) in a planarizing manner over a whole area of element regions.

摘要翻译： 提供具有减小的暗电流的平坦化结构的固态成像装置，其允许在从可见波长到近红外波长的宽波长带上的高灵敏度及其制造方法。 具有形成在基板（10）上的电路（30）的步骤，在电路（30）上形成下电极层（25），图案化下电极层（25），将其逐像分割成一组段 在元件区域的整个区域上形成黄铜矿结构（24）的化合物半导体薄膜，将化合物半导体薄膜（24）上的抗蚀剂层（27）根据下部电极施加到像素图案 层（25）作为分隔成该组段的基底，在元件区域的整个区域上施加离子掺杂，在化合物半导体薄膜（24）中形成元件分离区域（34），去除抗蚀剂层（27） ），用于曝光由元件分离区域（34）以像素方式隔开的一组化合物半导体薄膜（24）的表面，并且在元件区域的整个区域上以平坦化方式形成透明电极层（26） 。