Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device
    21.
    发明申请
    Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device 有权
    掩模图案检查方法,曝光条件验证方法和半导体器件的制造方法

    公开(公告)号:US20070009811A1

    公开(公告)日:2007-01-11

    申请号:US11480382

    申请日:2006-07-05

    IPC分类号: G03C5/00 G06K9/00 G03F1/00

    CPC分类号: G03F1/84

    摘要: A mask pattern inspection method includes: transferring a mask pattern onto a conductor substrate or a semiconductor substrate; preparing a sample including a substrate surface pattern in an electrically conductive state to the substrate, the substrate surface pattern being constituted of a convex pattern or a concave pattern each having a shape in accordance with the transferred mask pattern, or a surface layer obtained by filling the concave pattern with a material; irradiating the sample with an electron beam to detect at least one of a secondary electron, a reflected electron and a backscattered electron generated from the surface of the sample, thereby acquiring an image of the sample surface; and inspecting the mask pattern on the basis of the image.

    摘要翻译: 掩模图案检查方法包括:将掩模图案转印到导体基板或半导体基板上; 将具有导电状态的基板表面图案的样品制备到基板,所述基板表面图案由根据所转印的掩模图案的形状的凸形图案或凹形图案构成,或者通过填充获得的表面层 具有材料的凹形图案; 用电子束照射样品以检测从样品表面产生的二次电子,反射电子和背散射电子中的至少一个,从而获取样品表面的图像; 并基于图像检查掩模图案。

    Defect inspection apparatus, program, and manufacturing method of semiconductor device
    24.
    发明申请
    Defect inspection apparatus, program, and manufacturing method of semiconductor device 有权
    半导体器件的缺陷检查装置,程序和制造方法

    公开(公告)号:US20050230618A1

    公开(公告)日:2005-10-20

    申请号:US11086212

    申请日:2005-03-23

    摘要: A defect inspection apparatus includes a charged particle beam source which emits a charged particle beam to illuminate the charged particle beam onto a sample as a primary beam; an image pickup which includes an imaging element having a light receiving face receiving at least one of a secondary charged particle, a reflective charged particle, and a back-scattered charged particle generated from the sample by the illumination of the primary beam and which outputs a signal indicating a state of the surface of the sample; a mapping projection system which maps/projects at least one of the secondary charged particle, the reflective charged particle, and the back-scattered charged particle as a secondary beam and which makes the beam to form an image on the light receiving face of the imaging element; a controller which adjusts a beam diameter of the primary beam in such a manner as to apply the beam to the sample with a size smaller than that of an imaging region as a target of review to scan the imaging region and which allows the image pickup to pick up a plurality of frame images; an image processor which processes the plurality of obtained frame images to prepare a review image; and a defect judgment unit which judges a defect of the sample based on the review image.

    摘要翻译: 缺陷检查装置包括:带电粒子束源,其发射带电粒子束,以将带电粒子束照射到样品上作为主光束; 一种图像拾取器,其包括具有光接收面的成像元件,所述光接收面接收通过所述一次光束的照射从所述样品产生的二次带电粒子,反射带电粒子和反向散射带电粒子中的至少一个,并且输出 指示样品表面状态的信号; 映射投影系统,其将二次带电粒子,反射带电粒子和反向散射带电粒子中的至少一个作为次级光束进行映射/投影,并且使得该光束在成像的光接收面上形成图像 元件; 控制器,其以这样的方式调节主光束的光束直径,使得将光束以比成像区域的尺寸小的像素的尺寸施加到作为检查对象的扫描成像区域,并且允许图像拾取 拾取多个帧图像; 处理所述多个获得的帧图像以准备检查图像的图像处理器; 以及缺陷判定单元,其基于检查图像判断样本的缺陷。

    Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device
    25.
    发明授权
    Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device 有权
    掩模图案检查方法,曝光条件验证方法和半导体器件的制造方法

    公开(公告)号:US07674570B2

    公开(公告)日:2010-03-09

    申请号:US11480382

    申请日:2006-07-05

    IPC分类号: G03F7/20

    CPC分类号: G03F1/84

    摘要: A mask pattern inspection method includes: transferring a mask pattern onto a conductor substrate or a semiconductor substrate; preparing a sample including a substrate surface pattern in an electrically conductive state to the substrate, the substrate surface pattern being constituted of a convex pattern or a concave pattern each having a shape in accordance with the transferred mask pattern, or a surface layer obtained by filling the concave pattern with a material; irradiating the sample with an electron beam to detect at least one of a secondary electron, a reflected electron and a backscattered electron generated from the surface of the sample, thereby acquiring an image of the sample surface; and inspecting the mask pattern on the basis of the image.

    摘要翻译: 掩模图案检查方法包括:将掩模图案转印到导体基板或半导体基板上; 将具有导电状态的基板表面图案的样品制备到基板,所述基板表面图案由根据所转印的掩模图案的形状的凸形图案或凹形图案构成,或者通过填充获得的表面层 具有材料的凹形图案; 用电子束照射样品以检测从样品表面产生的二次电子,反射电子和背散射电子中的至少一个,从而获取样品表面的图像; 并基于图像检查掩模图案。

    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method
    26.
    发明授权
    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method 失效
    基板检查装置,基板检查方法及半导体装置的制造方法

    公开(公告)号:US07608821B2

    公开(公告)日:2009-10-27

    申请号:US11698132

    申请日:2007-01-26

    IPC分类号: H01J37/26 G01N23/04

    摘要: A substrate inspection apparatus includes: an electron gun which generates an electron beam to irradiate the electron beam to a substrate; an electron detection unit which detects at least one of a secondary electron, a reflection electron and a back scattering electron generated from a surface of the substrate by the irradiation of the electron beam to output signals constituting an image showing a state of the substrate surface; and a surface potential uniformizing unit which generates ions, and irradiates the ions to the substrate before the irradiation of the electron beam to uniformize a surface potential of the substrate.

    摘要翻译: 基板检查装置包括:电子枪,其产生电子束以将电子束照射到基板; 电子检测单元,其通过电子束的照射检测从基板的表面产生的二次电子,反射电子和背散射电子中的至少一个,以输出构成表示基板表面的状态的图像的信号; 以及产生离子的表面电位均匀化单元,并且在照射电子束之前将离子照射到衬底上以使衬底的表面电位均匀化。

    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
    27.
    发明授权
    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device 有权
    基板检查装置,基板检查方法及制造半导体装置的方法

    公开(公告)号:US07462829B2

    公开(公告)日:2008-12-09

    申请号:US11723566

    申请日:2007-03-21

    IPC分类号: H01J37/244

    CPC分类号: H01J37/28 H01J2237/2817

    摘要: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

    摘要翻译: 基板检查装置包括:电子束照射装置,其发射电子束并使电子束照射待检查的基板作为主光束; 电子束检测器,其检测从已经被电子束照射的衬底产生的二次电子,反射电子和反向散射电子中的至少一个,并输出形成一维或二维的信号, 基板的表面的三维图像; 映射投影光学系统,其将二次电子,反射电子和背散射电子中的至少一个成像在电子束检测器上作为次级光束; 以及电磁波照射装置,其产生电磁波,并使电磁波照射到产生二次光束的基板的表面上的位置。

    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device

    公开(公告)号:US20070187600A1

    公开(公告)日:2007-08-16

    申请号:US11723566

    申请日:2007-03-21

    IPC分类号: G21K7/00

    CPC分类号: H01J37/28 H01J2237/2817

    摘要: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
    30.
    发明授权
    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device 有权
    基板检查装置,基板检查方法及制造半导体装置的方法

    公开(公告)号:US07211796B2

    公开(公告)日:2007-05-01

    申请号:US10853678

    申请日:2004-05-26

    IPC分类号: H01J37/244

    CPC分类号: H01J37/28 H01J2237/2817

    摘要: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

    摘要翻译: 基板检查装置包括:电子束照射装置,其发射电子束并使电子束照射待检查的基板作为主光束; 电子束检测器,其检测从已经被电子束照射的衬底产生的二次电子,反射电子和反向散射电子中的至少一个,并输出形成一维或二维的信号, 基板的表面的三维图像; 映射投影光学系统,其将二次电子,反射电子和背散射电子中的至少一个成像在电子束检测器上作为次级光束; 以及电磁波照射装置,其产生电磁波,并使电磁波照射到产生二次光束的基板的表面上的位置。