摘要:
To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要:
When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which a range of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element.
摘要:
As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要:
A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.
摘要:
It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
摘要:
It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
摘要:
It is an object of the present invention to provide a light-emitting element and a light-emitting device, in which a plurality of electroluminescent layers are stacked with a charge generation layer interposed therebetween between a pair of electrodes that are opposed to each other, and for which the charge generation layer can be formed on the electroluminescent layer by sputtering without damaging the electroluminescent layer. A material that is not easily etched is used for, of the electroluminescent layer, the closest layer to the charge generation layer formed by sputtering on the electroluminescent layer. Specifically, a benzoxazole derivative or a pyridine derivative is used.
摘要:
To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要:
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要:
An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).