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    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
    10.
    发明授权
    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region 有权
    制造半导体器件的方法包括在第一半导体区域上分别形成含有杂质元素的第二半导体膜

    公开(公告)号：US07648861B2

    公开(公告)日：2010-01-19

    申请号：US11193513

    申请日：2005-08-01

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

    摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

    摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热 非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域 形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。