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21.发明授权公开(公告)号：US07282730B2
公开(公告)日：2007-10-16
申请号：US11037850
申请日：2005-01-18
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , H01L27/2427 , H01L45/00 , H01L45/06 , H01L45/1253 , H01L45/1293 , H01L45/141
摘要： A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.
摘要翻译： 含碳层可以形成在一对含硫族化物的含相变层的层之间。 当下部硫族化物层允许电流通过时，可以在其中形成细丝。 然后，细丝将含碳层的电加热定位，将相对局部化的区域转化为较低的导电性区域。 该区域然后导致加热和电流流过上相变材料层的定位。 在一些实施例中，可能需要较少的相变材料来改变相位以形成相变存储器，从而减少所得到的相变存储器的电流要求。
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公开(公告)号：US6075719A
公开(公告)日：2000-06-13
申请号：US337778
申请日：1999-06-22
申请人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
发明人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0064
摘要： A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
摘要翻译： 一种将电可编程相变存储元件编程为低电阻状态的方法。 施加足以将器件从低电阻状态转换为高电阻状态的能量的第一脉冲，并且在第一脉冲之后施加足以将器件从高电阻状态转换为低电阻状态的第二能量脉冲。 在另一种编程方法中，比较当前和期望的器件状态，并且只有当需要改变器件的状态时才施加编程脉冲。
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23.发明授权公开(公告)号：US07978508B2
公开(公告)日：2011-07-12
申请号：US12356236
申请日：2009-01-20
申请人： Wolodymyr Czubatyj
发明人： Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0035 , G11C7/04 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0083 , G11C2013/0092
摘要： A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
摘要翻译： 编程相变材料的方法。 该方法包括向相变材料提供变换脉冲，其中变换脉冲包括编程波形和调节波形。 编程波形提供足够的能量来改变相变材料的结构状态。 在一个实施例中，编程波形改变相变材料内的晶体和非晶相区域的体积分数。 调节波形提供足够的能量以将相变材料加热到高于环境温度但低于相变材料的结晶温度的温度。 该方法将相变材料编程为呈现减小的电阻时间变化的状态。
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公开(公告)号：US07902536B2
公开(公告)日：2011-03-08
申请号：US11495927
申请日：2006-07-28
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译： 径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。 所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定 第一个区域。 此外，公开了一种制造存储器件的方法。 这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。 第一开口提供第一电极的大致平面的第一接触。 该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。
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25.发明授权Electrically rewritable non-volatile memory element and method of manufacturing the same 有权电可重写非易失性存储元件及其制造方法公开(公告)号：US07692272B2
公开(公告)日：2010-04-06
申请号：US11334504
申请日：2006-01-19
IPC分类号： H01L31/0264
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.
摘要翻译： 非易失性存储元件包括底部电极12; 顶部电极15; 以及包含相变材料的记录层13和可以阻挡设置在底部电极12和顶部电极15之间的记录层13的相变的阻挡层14.阻挡层14由具有电阻的材料构成， 比构成记录层13的材料高。阻挡层14抑制向顶部电极15的热辐射，并且在施加写入电流时极大地限制相变区域。 结果是高的加热效率。 顶部电极15本身可以用于构成位线，或者可以提供单独的位线。
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公开(公告)号：US20090225588A1
公开(公告)日：2009-09-10
申请号：US12044407
申请日：2008-03-07
CPC分类号： H01L45/122 , H01L45/06 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
摘要翻译： 相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极 交换材料 当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。
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公开(公告)号：US20080273372A1
公开(公告)日：2008-11-06
申请号：US12178148
申请日：2008-07-23
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
摘要翻译： 一种编程多层硫族化物电子器件的方法。 该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。 该方法包括在两个终端之间提供电信号，其中电信号改变远离一个终端的层的电特性。 在一个实施例中，远离终端的层是硫族化物材料，并且电特性是电阻。 在另一个实施例中，与终端接触的层的电特性也被改变。 电特性的改变可能是由硫族化物材料从一种结构状态转变为另一种结构状态引起的。
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公开(公告)号：US20080224120A1
公开(公告)日：2008-09-18
申请号：US12152330
申请日：2008-05-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L45/00
CPC分类号： H01L45/126 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/141
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译： 可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。 共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。
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29.发明申请Multi-layered chalcogenide and related devices having enhanced operational characteristics 审中-公开具有增强的操作特性的多层硫族化物和相关装置公开(公告)号：US20080042119A1
公开(公告)日：2008-02-21
申请号：US11821246
申请日：2007-06-22
申请人： Regino Sandoval , Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
发明人： Regino Sandoval , Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
IPC分类号： H01L47/00
CPC分类号： H01L45/1246 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A multi-layer chalcogenide, memory or switching device. The device includes an active region disposed between a first terminal and a second terminal. The active region includes a first layer and a second layer, where one of the layers is a heterogeneous layer that includes an operational component and a promoter component. The other layer may be a homogeneous or heterogeneous layer. In exemplary embodiments, the operational component is a chalcogenide or phase change material and the promoter component is an insulating or dielectric material. Inclusion of the promoter component provides beneficial performance characteristics such as a reduction in reset current or minimization of formation requirements.
摘要翻译： 多层硫族化物，记忆体或开关装置。 该装置包括设置在第一端子和第二端子之间的有源区域。 有源区包括第一层和第二层，其中一层是包含可操作组分和促进剂组分的异质层。 另一层可以是均质或非均质层。 在示例性实施方案中，操作组分是硫族化物或相变材料，并且促进剂组分是绝缘或介电材料。 包含启动子组分提供了有益的性能特征，例如复位电流的降低或形成要求的最小化。
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公开(公告)号：US20080023685A1
公开(公告)日：2008-01-31
申请号：US11743459
申请日：2007-05-02
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/143 , H01L45/144
摘要： A memory device includes a phase-change material and a first electrode in electrical communication with the phase-change material. Also included is a second electrode in electrical communication with the phase-change material and a dielectric layer. The dielectric layer is disposed between the first electrode and the second electrode. The dielectric layer has an opening therethrough. The phase-change material is disposed on both sides of the dielectric layer and within the opening. Electrical communication within the device is by means of virtual contacts.
摘要翻译： 存储器件包括相变材料和与相变材料电连通的第一电极。 还包括与相变材料和介电层电连通的第二电极。 介电层设置在第一电极和第二电极之间。 电介质层具有通过其的开口。 相变材料设置在电介质层的两侧和开口内。 设备内的电气通信是通过虚拟接触。
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