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    Light emitting nanowires for macroelectronics
    25.
    发明申请
    Light emitting nanowires for macroelectronics 审中-公开
    大电子发光纳米线

    公开(公告)号：US20060273328A1

    公开(公告)日：2006-12-07

    申请号：US11440227

    申请日：2006-05-24

    申请人： Chunming Niu ,  Stephen Empedocles ,  David Zaziski

    发明人： Chunming Niu ,  Stephen Empedocles ,  David Zaziski

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/24 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.

    摘要翻译： 公开了使用密集定向的纳米线制造宏观电子发光器件的系统和方法。 在一个实施例中，合成核心纳米线，并在纳米线周围制造绝缘壳。 然后将纳米线核 - 壳结构沉积在基底上以产生致密定向的纳米线薄膜。 一旦产生致密取向的纳米线薄膜，就通过在纳米线薄膜上分层金属来制造金属 - 绝缘体纳米线结构。 然后在金属 - 绝缘体纳米线结构上形成欧姆接触用于操作。 将电信号施加到欧姆接触引起来自金属 - 绝缘体纳米线结构的光发射。 还公开了具有致密取向的纳米线薄膜的发光器件。 在一个实施例中，发光器件例如是LED。 纳米线可以包括例如GaN，InP，CdS纳米线或这些和其它纳米线的组合。 可以基于纳米线的类型，纳米线类型和纳米线的物理特性的组合来产生不同颜色的光。

    Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
    29.
    发明授权
    Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites 有权
    纳米激光大面积宏观电子衬底纳入纳米线和纳米线复合材料的应用

    公开(公告)号：US07051945B2

    公开(公告)日：2006-05-30

    申请号：US10674071

    申请日：2003-09-30

    申请人： Stephen Empedocles ,  David P. Stumbo ,  Chunming Niu ,  Xianfeng Duan

    发明人： Stephen Empedocles ,  David P. Stumbo ,  Chunming Niu ,  Xianfeng Duan

    IPC分类号： G06K19/06

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/02 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/18 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

    摘要： Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

    摘要翻译： 描述了纳入纳米线的宏电子衬底材料。 这些用于为各种不同的应用提供底层电子元件（例如，晶体管等）。 公开了制造宏电子衬底材料的方法。 一个应用是在小型轻型传感器中传输RF信号的接收。 这样的传感器可以配置在分布式传感器网络中，以提供安全监控。 此外，描述了用于射频识别（RFID）标签的方法和装置。 RFID标签包括天线和波束导向阵列。 光束转向阵列包括多个可调谐元件。 还描述了用于通过纳米线实现的声消除装置和可调移相器的方法和装置。

    Artificial dielectrics using nanostructures
    30.
    发明申请
    Artificial dielectrics using nanostructures 失效
    使用纳米结构的人造电介质

    公开(公告)号：US20070296032A1

    公开(公告)日：2007-12-27

    申请号：US11203432

    申请日：2005-08-15

    申请人： David Stumbo ,  Stephen Empedocles ,  Francisco Leon ,  J. Parce

    发明人： David Stumbo ,  Stephen Empedocles ,  Francisco Leon ,  J. Parce

    IPC分类号： H01L27/12

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L29/0673 ,  H01L29/4908 ,  H01L51/0537 ,  Y10S977/743 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/813 ,  Y10S977/936

    摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials

    摘要翻译： 公开了使用纳米结构的人造电介质，例如纳米线。 在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。 此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料