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公开(公告)号:US11201065B2
公开(公告)日:2021-12-14
申请号:US16791152
申请日:2020-02-14
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer , Byron Harry Gibbs
IPC: H01L21/56 , H01L21/687
Abstract: A method of manufacturing a semiconductor package includes covering a semiconductor die and a plurality of conductive terminals coupled to the semiconductor die in a mold compound, positioning the mold compound between a first pair of electrodes and a second pair of electrodes, and moving a movable electrode of the first pair and a movable electrode of the second pair into a first clamping position. In the first clamping position, each of the first pair of electrodes and the second pair of electrodes electrically couples to a unique subset of the plurality of conductive terminals. The method also includes applying, by the first pair of electrodes, a first voltage to the semiconductor die within the mold compound; and applying, by the second pair of electrodes, a second voltage to the semiconductor die within the mold compound. The second voltage is less than the first voltage.
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公开(公告)号:US10770378B1
公开(公告)日:2020-09-08
申请号:US16401828
申请日:2019-05-02
Applicant: Texas Instruments Incorporated
Inventor: Enis Tuncer
IPC: H01L23/495
Abstract: A microelectronic device includes a first conductor and a second conductor, separated by a lateral spacing. The first conductor has a low field contour facing the second conductor. The low field contour has offsets from a tangent line to the first conductor on the low field contour. Each of the offsets increases a separation of the high voltage conductor from the low voltage conductor. A first offset, located from an end of the high voltage conductor, at a first lateral distance of 25 percent of the minimum separation, is 19 percent to 28 percent of the minimum separation. A second offset, located at a second lateral distance of 50 percent of the minimum separation, is 9 percent to 14 percent of the minimum separation. A third offset, located at a third lateral distance of 75 percent of the minimum separation, is 4 percent to 6 percent of the minimum separation.
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公开(公告)号:US20190214964A1
公开(公告)日:2019-07-11
申请号:US16356890
申请日:2019-03-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer , Abram Castro
IPC: H03H9/10
CPC classification number: H03H9/1042 , H03H9/1007
Abstract: An assembly including an electrical connection substrate formed of material having a Young's modulus of less than about 10 MPa, an acoustic device die having opposite end portions mounted on and electrically connected to the electrical connection substrate and a mold compound layer encapsulating the acoustic device die and interfacing with the substrate.
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公开(公告)号:US20190019776A1
公开(公告)日:2019-01-17
申请号:US15646976
申请日:2017-07-11
Applicant: Texas Instruments Incorporated
Inventor: Enis Tuncer , Minhong Mi , Swaminathan Sankaran , Rajen M. Murugan , Vikas Gupta
IPC: H01L25/065 , H01L23/31 , H01L49/02 , H01L23/495 , H01L23/00
Abstract: Described examples include a packaged device including a first object and a second object spaced from each other by a gap, each object having a first surface and an opposite second surface, the first surfaces of the first object and the second object including first terminals. A structure includes at least two conductors embedded in a dielectric casing consolidating a configuration and organization of the at least two conductors, the at least two conductors having end portions un-embedded by the dielectric casing. An end portion of at least one of the at least two conductors is electrically connected to a first terminal of the first object, and an opposite end portion of the at least one of the at least two conductors is electrically connected to a respective first terminal of the second object, the at least two conductors electrically connecting the first object and the second object.
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公开(公告)号:US20160322557A1
公开(公告)日:2016-11-03
申请号:US14698616
申请日:2015-04-28
Applicant: Texas Instruments Incorporated
Inventor: Enis Tuncer , Abram Castro
CPC classification number: H03H9/1042 , H03H9/1007
Abstract: An assembly including an electrical connection substrate formed of material having a Young's modulus of less than about 10 MPa, an acoustic device die having opposite end portions mounted on and electrically connected to the electrical connection substrate and a mold compound layer encapsulating the acoustic device die and interfacing with the substrate.
Abstract translation: 一种组件,包括由杨氏模量小于约10MPa的材料形成的电连接衬底,具有安装在电连接衬底上并与其电连接的相对端部的声学器件模具和封装声学器件裸片的模制化合物层 与基底接触。
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公开(公告)号:US12191252B2
公开(公告)日:2025-01-07
申请号:US17546383
申请日:2021-12-09
Applicant: Texas Instruments Incorporated
Inventor: Enis Tuncer
IPC: H01L23/525 , H01L21/56 , H01L23/00 , H01L23/31
Abstract: An electronic device has a fuse circuit including a semiconductor die and first and second bond wires, the semiconductor die having a bond pad and a fuse, the fuse having first and second portions, the bond pad coupled to the first portion of the fuse, and the second portion of the fuse coupled to a protected circuit, the first bond wire having a first end coupled to the bond pad and a second end coupled to a conductive terminal, and the second bond wire having a first end coupled to the second end of the first bond wire and a second end coupled to the conductive terminal.
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公开(公告)号:US20240266306A1
公开(公告)日:2024-08-08
申请号:US18610050
申请日:2024-03-19
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer
IPC: H01L23/62 , H01L21/56 , H01L23/00 , H01L23/24 , H01L23/29 , H01L23/31 , H01L23/495 , H01L23/532 , H02H7/00
CPC classification number: H01L23/62 , H01L21/56 , H01L23/24 , H01L23/3135 , H01L24/32 , H01L24/48 , H01L24/73 , H02H7/008 , H01L23/293 , H01L23/296 , H01L23/49513 , H01L23/53295 , H01L2224/32245 , H01L2224/48245 , H01L2224/73265
Abstract: A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.
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公开(公告)号:US11935844B2
公开(公告)日:2024-03-19
申请号:US17138903
申请日:2020-12-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer
IPC: H01L23/62 , H01L21/56 , H01L23/00 , H01L23/24 , H01L23/31 , H02H7/00 , H01L23/29 , H01L23/495 , H01L23/532
CPC classification number: H01L23/62 , H01L21/56 , H01L23/24 , H01L23/3135 , H01L24/32 , H01L24/48 , H01L24/73 , H02H7/008 , H01L23/293 , H01L23/296 , H01L23/49513 , H01L23/53295 , H01L2224/32245 , H01L2224/48245 , H01L2224/73265
Abstract: A semiconductor package and a method for forming a semiconductor package are disclosed. The semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.
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公开(公告)号:US11881445B2
公开(公告)日:2024-01-23
申请号:US17307915
申请日:2021-05-04
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer
IPC: H01L23/495 , H01L23/00 , H01L23/31 , H01L21/48 , H01L25/00 , H01L25/065
CPC classification number: H01L23/49575 , H01L21/4821 , H01L23/3121 , H01L23/49503 , H01L23/49541 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/50 , H01L21/4828 , H01L21/4842 , H01L24/32 , H01L24/73 , H01L2224/32245 , H01L2224/48137 , H01L2224/48245 , H01L2224/49175 , H01L2224/73265
Abstract: An apparatus includes a first die attach pad and a second die attach pad. A first die is attached to the first die attach pad and a second die is attached to the second die attach pad. The first die attach pad and the second die attach pad are separated by a gap. A first edge of the first die attach pad adjacent to the gap is thinner than a second edge of the first die attach pad. The first edge of the first die attach pad is opposite the second edge of the first die attach pad. A first edge of the second die attach pad adjacent to the gap is thinner than a second edge of the second die attach pad. The first edge of the second die attach pad is opposite the second edge of the second die attach pad.
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公开(公告)号:US11879790B2
公开(公告)日:2024-01-23
申请号:US17513259
申请日:2021-10-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Enis Tuncer
IPC: H01L23/00 , G01K7/01 , H01L23/28 , H01L23/48 , H01L23/485
CPC classification number: G01K7/01 , H01L23/28 , H01L23/48 , H01L23/485 , H01L24/46 , H01L2224/48091 , H01L2224/73265
Abstract: An electronic device includes a substrate, a dielectric spacer, a semiconductor die, and a package structure. The substrate has a dielectric layer, a die pad, first and second leads, a conductive via, and a conductive trace, the dielectric layer has an opening extending into a side, the die pad is coupled to the first lead, the second lead is coupled to the conductive via, and the conductive trace is coupled to the via. The dielectric spacer is mounted above the die pad in the opening, and the semiconductor die is mounted above the dielectric spacer, the semiconductor die includes a temperature sensor, and an electrical connection couples the semiconductor die to the conductive trace. The package structure extends on the side of the dielectric layer, on the semiconductor die, and on the conductive trace, the package structure extending around the dielectric spacer and to the die pad in the opening.
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