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    Integrated circuit, method for manufacturing same, and radio communication device using same
    25.
    发明授权
    Integrated circuit, method for manufacturing same, and radio communication device using same 有权

    公开(公告)号：US11616453B2

    公开(公告)日：2023-03-28

    申请号：US16652579

    申请日：2018-10-25

    Applicant: TORAY INDUSTRIES, INC.

    Inventor： Hiroji Shimizu ,  Seiichiro Murase

    IPC: H02M7/48 ,  C01B32/158 ,  G06K19/02 ,  G06K19/07 ,  H01L27/088 ,  H01L27/10 ,  H01L29/786

    Abstract: An integrated circuit includes a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory. The memory array includes a first semiconductor memory element having a first semiconductor layer. The rectifying circuit includes a second semiconductor rectifying element having a second semiconductor layer. The logic circuit includes a third semiconductor logic element having a third semiconductor layer. The second semiconductor layer is a functional layer exhibiting a rectifying action and the third semiconductor layer is a channel layer of a logic element. All the first, second and third semiconductor layers, the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.

    Wireless communication device
    27.
    发明授权
    Wireless communication device 有权

    公开(公告)号：US11431094B2

    公开(公告)日：2022-08-30

    申请号：US16978490

    申请日：2019-03-04

    Applicant: TORAY INDUSTRIES, INC.

    Inventor： Yoshihiro Kariya ,  Kenta Noguchi ,  Hiroji Shimizu ,  Seiichiro Murase ,  Hisashi Nishikawa

    IPC: H01Q1/24 ,  H01Q7/00 ,  H01Q1/22 ,  H04B1/59 ,  H04B5/00 ,  H04B5/02

    Abstract: A wireless communication device includes: an antenna for transmitting and receiving a radio wave, a rectifying circuit that is connected to the antenna and rectifies the radio wave received by the antenna to generate voltage, an internal circuit that operates by the voltage generated by the rectifying circuit, and a switch circuit that is disposed contactlessly with respect to the antenna and operates on the basis of an output signal of the internal circuit, wherein the switch circuit includes a coupling wiring and a switch element, and the operation of the switch element varies the impedance of the antenna so that communication can be carried out.

    FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE
    29.
    发明申请
    FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE 有权

    公开(公告)号：US20220131097A1

    公开(公告)日：2022-04-28

    申请号：US17428665

    申请日：2020-02-13

    Applicant: Toray Industries, Inc.

    Inventor： Shota Kawai ,  Hiroji Shimizu ,  Seiichiro Murase

    IPC: H01L51/10 ,  H01L51/05 ,  H01L51/00

    Abstract: A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

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