Abstract:
Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.
Abstract:
In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.
Abstract:
An apparatus for inspecting wafer carriers is disclosed. In one example, the apparatus includes: a housing; a load port; a robot arm inside the housing; and a processor. The load port is configured to load a wafer carrier into the housing. The robot arm is configured to move a first camera connected to the robot arm. The first camera is configured to capture a plurality of images of the wafer carrier. The processor is configured to process the plurality of images to inspect the wafer carrier.
Abstract:
Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.
Abstract:
An apparatus for handling wafer carriers in a semiconductor fabrication facility (FAB) is disclosed. In one example, the apparatus includes: a table configured to receive a wafer carrier having a first door and operable to hold a plurality of wafers; an opening mechanism configured to open the first door of the wafer carrier; and a door storage space configured to store the first door. The apparatus may be either located on a floor of the FAB or physically coupled to a ceiling of the FAB.
Abstract:
A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein the first platform has a first load lock and a first plurality of chambers, and the second platform has a second load lock and a second plurality of chambers, and the vacuum tunnel connects the first and the second load locks.
Abstract:
A wafer transfer method includes the following steps. An initial position of a first wafer in a wafer cassette is detected. A picking entry position in the wafer cassette is determined based on the initial position of the first wafer, in which the picking entry position is spaced apart from the initial position of the first wafer. A wafer transfer blade is moved to the picking entry position.
Abstract:
Embodiments of a plasma density distribution control method and a plasma processing apparatus are provided. The plasma processing apparatus includes an electrostatic chuck positioned in a processing chamber thereof The electrostatic chuck includes a number of power electrodes for controlling the plasma in the processing chamber, and the power electrodes are separated from and movable relative to each other. Since the distances between the plasma and each of the power electrodes are adjustable, the plasma density in the processing chamber can thus be tunable by zone. Therefore, the uniformity of the plasma density in the processing chamber can be improved. Further, the power electrodes can be driven by a single electrical signal. Therefore, the cost and system complexity of the plasma processing apparatus can be reduced.