VACUUM WAFER CHUCK FOR MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20250112081A1

    公开(公告)日:2025-04-03

    申请号:US18981155

    申请日:2024-12-13

    Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

    VACUUM WAFER CHUCK FOR MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20220059393A1

    公开(公告)日:2022-02-24

    申请号:US16998461

    申请日:2020-08-20

    Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

    WAFER TRANSFER METHOD AND SYSTEM
    27.
    发明申请
    WAFER TRANSFER METHOD AND SYSTEM 有权
    转移方法和系统

    公开(公告)号:US20160111311A1

    公开(公告)日:2016-04-21

    申请号:US14518373

    申请日:2014-10-20

    CPC classification number: H01L21/67259 H01L21/67265 H01L21/67778 H01L21/68

    Abstract: A wafer transfer method includes the following steps. An initial position of a first wafer in a wafer cassette is detected. A picking entry position in the wafer cassette is determined based on the initial position of the first wafer, in which the picking entry position is spaced apart from the initial position of the first wafer. A wafer transfer blade is moved to the picking entry position.

    Abstract translation: 晶片转印方法包括以下步骤。 检测晶片盒中的第一晶片的初始位置。 基于第一晶片的初始位置来确定晶片盒中的拾取进入位置,其中拾取进入位置与第一晶片的初始位置间隔开。 晶片转印刀片移动到拾取进入位置。

    PLASMA PROCESSING APPARATUS AND PLASMA-UNIFORMITY CONTROL METHOD
    28.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA-UNIFORMITY CONTROL METHOD 审中-公开
    等离子体处理装置和等离子体均匀控制方法

    公开(公告)号:US20150197852A1

    公开(公告)日:2015-07-16

    申请号:US14153430

    申请日:2014-01-13

    CPC classification number: C23C16/509 C23C16/4586 C23C16/503 H01L21/6831

    Abstract: Embodiments of a plasma density distribution control method and a plasma processing apparatus are provided. The plasma processing apparatus includes an electrostatic chuck positioned in a processing chamber thereof The electrostatic chuck includes a number of power electrodes for controlling the plasma in the processing chamber, and the power electrodes are separated from and movable relative to each other. Since the distances between the plasma and each of the power electrodes are adjustable, the plasma density in the processing chamber can thus be tunable by zone. Therefore, the uniformity of the plasma density in the processing chamber can be improved. Further, the power electrodes can be driven by a single electrical signal. Therefore, the cost and system complexity of the plasma processing apparatus can be reduced.

    Abstract translation: 提供等离子体密度分布控制方法和等离子体处理装置的实施例。 等离子体处理装置包括位于处理室中的静电卡盘。静电卡盘包括用于控制处理室中的等离子体的多个功率电极,并且功率电极相对于彼此分离和移动。 由于等离子体和每个功率电极之间的距离是可调节的,因此处理室中的等离子体密度可以由区域调节。 因此,可以提高处理室中的等离子体密度的均匀性。 此外,功率电极可以由单个电信号驱动。 因此,可以降低等离子体处理装置的成本和系统复杂性。

Patent Agency Ranking