公开(公告)号：US10186454B2

公开(公告)日：2019-01-22

申请号：US15623481

申请日：2017-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han Lin ,  Han-Sheng Weng ,  Chao-Ching Chang ,  Jian-Shin Tsai ,  Yi-Ming Lin ,  Min-Hui Lin

IPC: H01L21/20 ,  H01L21/469 ,  H01L23/12 ,  H01L21/768 ,  H01L23/535 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

公开(公告)号：US20180047682A1

公开(公告)日：2018-02-15

申请号：US15236526

申请日：2016-08-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chao-Ching Chang ,  Sheng-Chan Li ,  Wen-Jen Tsai ,  Chih-Hui Huang ,  Jian-Shin Tsai ,  Cheng-Yi Wu ,  Yi-Ming Lin ,  Min-Hui Lin

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L21/02107 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/02251 ,  H01L2224/0226 ,  H01L2224/02331 ,  H01L2224/0237 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03011 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/80001 ,  H01L2224/80895 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0504 ,  H01L2924/0544 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate. The top metal layer is disposed in the dielectric structure. The bonding structure is disposed on the dielectric structure and the top metal layer. The bonding structure includes a silicon oxide layer, a silicon oxy-nitride layer, a conductive bonding layer and a barrier layer. The silicon oxide layer is disposed on the dielectric structure. The silicon oxy-nitride layer covers the silicon oxide layer. The conductive bonding layer is disposed in the silicon oxide layer and the silicon oxy-nitride layer. The barrier layer covers a sidewall and a bottom of the conductive bonding layer.