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    SEMICONDUCTOR CERAMIC COMPOSITION AND PROCESS FOR PRODUCING THE SAME
    21.
    发明申请
    SEMICONDUCTOR CERAMIC COMPOSITION AND PROCESS FOR PRODUCING THE SAME 有权
    半导体陶瓷组合物及其制造方法

    公开(公告)号：US20100012905A1

    公开(公告)日：2010-01-21

    申请号：US12444895

    申请日：2007-10-26

    申请人： Takeshi Shimada ,  Kazuya Toji

    发明人： Takeshi Shimada ,  Kazuya Toji

    IPC分类号： H01B1/08

    CPC分类号： H01C7/025 ,  C04B35/4682 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6584 ,  H01C17/06533

    摘要： It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same. When a calcined Ba(TiM)O3 powder (M is a semiconductor dopant) and a calcined (BaNa)TiO3 powder are separately prepared and the Ba(TiM)O3 powder is calcined at a relatively high temperature while the (BaNa)TiO3 powder is at a relatively low temperature, both at the most suitable temperatures for them, then the evaporation of Bi may be retarded and the compositional deviation of Bi—Na may be thereby suppressed to inhibit the formation of different phases; and when these calcined powders are mixed, formed and sintered, then a semiconductor ceramic composition which has a low resistivity at room temperature and is capable of restraining the fluctuation of the Curie temperature can be obtained.

    摘要翻译： 旨在提供一种半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na代替，Bi-Na能够抑制在煅烧步骤中Bi的蒸发，因此能够抑制Bi-Na的组成偏差 抑制不同相的形成，能够进一步降低室温下的电阻率，并且能够抑制居里温度的波动; 并提供相同的生产工艺。 当分别制备煅烧的Ba（TiM）O 3粉末（M为半导体掺杂剂）和煅烧（BaNa）TiO 3粉末时，并且在较高温度下煅烧Ba（TiM）O 3粉末，而（BaNa）TiO 3粉末为 在相对较低的温度下，在它们最适合的温度下，则Bi的蒸发可能被延迟，并且可以抑制Bi-Na的组成偏差以抑制不同相的形成; 并且当将这些煅烧粉末混合，形成和烧结时，​​可以获得在室温下具有低电阻率并且能够抑制居里温度波动的半导体陶瓷组合物。

    Sample cell for improved gas flow in a gas analyzer
    25.
    发明授权
    Sample cell for improved gas flow in a gas analyzer 失效
    用于气体分析仪中气体流量改善的样品池

    公开(公告)号：US5374399A

    公开(公告)日：1994-12-20

    申请号：US902016

    申请日：1992-06-18

    申请人： Tokihiro Tsukamoto ,  Takeshi Shimada

    发明人： Tokihiro Tsukamoto ,  Takeshi Shimada

    IPC分类号： G01N21/03 ,  G01N21/05 ,  G01N21/35 ,  G01N21/3504 ,  G01N21/51 ,  G01N21/61 ,  G01N21/85 ,  G01N17/00

    CPC分类号： G01N21/05 ,  G01N2021/8578 ,  G01N2021/8585

    摘要： An improved sample cell for use in a gas analyzer has a sample body with a measuring optical path extending traverse to the cell body. A sample gas inlet port is positioned at one end of the cell body, and a sample gas outlet port is positioned at the other end of the cell body. Porous plates can extend across the cell body, and appropriately-dimensioned apertures in the porous plates can ensure a consistent flow path of gas across the optical path without any stagnated flow patterns.

    摘要翻译： 用于气体分析器的改进的样品池具有样品体，其具有横穿细胞体的测量光路。 样品气体入口位于电池体的一端，样品气体出口位于电池体的另一端。 多孔板可以延伸穿过电池体，并且多孔板中的适当尺寸的孔可以确保气体在光路上的一致的流动路径，而没有任何停滞的流动模式。

    PLASMA PROCESSING METHOD AND APPARATUS
    26.
    发明申请
    PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
    等离子体处理方法和装置

    公开(公告)号：US20100288195A1

    公开(公告)日：2010-11-18

    申请号：US12846403

    申请日：2010-07-29

    申请人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    发明人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

    摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

    摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

    RESIN COMPOSITION, AND PREPREG
    28.
    发明申请
    RESIN COMPOSITION, AND PREPREG 失效
    树脂组合物和PREPREG

    公开(公告)号：US20100183862A1

    公开(公告)日：2010-07-22

    申请号：US12594278

    申请日：2008-04-11

    申请人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

    发明人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

    IPC分类号： B32B27/04 ,  C08K9/10 ,  B32B37/00

    CPC分类号： C08J5/24 ,  C08G59/504 ,  C08J3/241 ,  C08J2363/00 ,  C08K5/41 ,  C08L63/00 ,  C08L2205/14 ,  Y10T156/10 ,  Y10T428/24994 ,  Y10T428/249948 ,  Y10T428/24995 ,  Y10T428/249952 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/2938 ,  Y10T428/31511 ,  Y10T428/31515 ,  C08L2666/02

    摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.

    摘要翻译： 本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份 至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒 直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

    DIELECTRIC PORCELAIN COMPOSITION FOR USE IN ELECTRONIC DEVICES
    30.
    发明申请
    DIELECTRIC PORCELAIN COMPOSITION FOR USE IN ELECTRONIC DEVICES 失效
    用于电子设备的电介质组合物

    公开(公告)号：US20090111680A1

    公开(公告)日：2009-04-30

    申请号：US12063483

    申请日：2005-08-11

    申请人： Takeshi Shimada

    发明人： Takeshi Shimada

    IPC分类号： C04B35/495

    CPC分类号： H01B3/12 ,  C04B35/495 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  H05K1/0306

    摘要： ABSTRACT The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient πf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3-Y(BazSrl-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient πf can be controlled in a negative direction and the πf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

    摘要翻译： 摘要本发明旨在提供一种用于电子器件的电介质瓷组合物，其可以特别在负方向上控制温度系数pif，并且可以在保持高Qf值和高介电常数的同时缩短烧结周期。 根据本发明，在具有由XBa（Mg1 / 3Ta2 / 3）O3-Y（BazSrl-z）（Ga1 / 2Ta1 / 2）O3表示的组成式的常规组合物中，当Mg被Ni取代以形成特定结构时 ，可以将温度系数pif控制在负方向，并且可以将pif控制在0.80〜-4.45ppm /℃的范围内，同时保持高Qf值和高介电常数，并且即使当烧结期间， 基本上50小时已经基本上需要减少到25小时，可以获得类似的Qf值。