公开(公告)号：US4143107A

公开(公告)日：1979-03-06

申请号：US661540

申请日：1976-02-26

申请人： Takashi Ishii ,  Katsutoshi Nishida ,  Michiyasu Komatsu ,  Akihiko Tsuge

发明人： Takashi Ishii ,  Katsutoshi Nishida ,  Michiyasu Komatsu ,  Akihiko Tsuge

IPC分类号： C04B35/584 ,  C04B35/593 ,  F01D25/00 ,  C04B35/64 ,  C04B33/32 ,  C04B35/50 ,  C04B35/58

CPC分类号： C04B35/584 ,  C04B35/593 ,  F01D25/005 ,  Y02T50/671

摘要： Disclosed is a silicon nitride-based sintered material having high heat resistance and containing crystal compounds prepared from the silicon nitride and at least one oxide of a rare earth element.

公开(公告)号：US4046580A

公开(公告)日：1977-09-06

申请号：US590073

申请日：1975-06-25

申请人： Takashi Ishii ,  Katsutoshi Nishida ,  Michiyasu Komatsu ,  Akihiko Tsuge

发明人： Takashi Ishii ,  Katsutoshi Nishida ,  Michiyasu Komatsu ,  Akihiko Tsuge

IPC分类号： C04B35/584 ,  C04B35/593 ,  F01D25/00 ,  C04B35/50 ,  C04B35/58

CPC分类号： C04B35/584 ,  C04B35/593 ,  F01D25/005 ,  Y02T50/671

摘要： Disclosed is a silicon nitride-based sintered material having high heat resistance and containing crystal compounds prepared from the silicon nitride and at least one of oxides of the elements belonging to the III A group in the periodic table.

公开(公告)号：US3956037A

公开(公告)日：1976-05-11

申请号：US460052

申请日：1974-04-11

申请人： Takashi Ishii ,  Kazuhisa Takahashi ,  Akihiro Kondo

发明人： Takashi Ishii ,  Kazuhisa Takahashi ,  Akihiro Kondo

IPC分类号： C23C16/44 ,  C30B25/02 ,  C30B31/18 ,  H01L21/205 ,  H01L7/44

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B31/18 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  Y10S148/003 ,  Y10S148/007 ,  Y10S148/039 ,  Y10S148/04 ,  Y10S438/916

摘要： A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.

摘要翻译： 公开了通过气相生长在第一半导体层上形成第二半导体层的方法。 两个半导体层具有相同的导电类型但具有不同的杂质浓度。 在形成过程中，在开始第二半导体层的气相生长之前提供掺杂气体，从而在气相生长边界中建立陡峭的杂质分布。

公开(公告)号：US07504671B2

公开(公告)日：2009-03-17

申请号：US11929492

申请日：2007-10-30

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.

摘要翻译： 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体装置100配备有基板2，基板2具有底面2b和位于底面2b的相反侧的元件安装面2a，半导体元件1具有安装在元件上的主表面1a 安装面2a。 在L是主表面1的长度方向上的长度，H是底面2b与元件安装面2a的距离的情况下，H / L的比例为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。 此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧，主表面1a设置有凹槽。 凹槽用于防止电极32的连接构件34向外流动。

公开(公告)号：US20090014092A1

公开(公告)日：2009-01-15

申请号：US11628746

申请日：2005-05-09

申请人： Minoru Ueshima ,  Takashi Ishii

发明人： Minoru Ueshima ,  Takashi Ishii

IPC分类号： B23K35/14 ,  B22D19/14 ,  B23K35/00

CPC分类号： B23K35/40 ,  B23K35/0222 ,  B23K35/025 ,  B23K35/22 ,  C22C2001/1052 ,  Y10T428/1216

摘要： [Problems] A conventional process for producing a solder preform in which a predetermined amount of high-melting metal particles are directly put into molten solder and stirred, requires a long time for dispersing the high-melting metal particles by stirring. Therefore, in the conventional method for producing a solder preform, dissolution of the high-melting metal particles into the molten solder occurred during stirring, and their particle diameters became small. If a semiconductor chip and a substrate are soldered with a solder preform containing metal particles having such decreased diameters, the space between portions being soldered becomes narrow, and a sufficient bonding strength is not obtained.[Means for Solving the Problems] In the present invention, a premixed master alloy having a higher proportion of the high-melting metal particles in solder is first prepared, then the premixed master alloy is put into molten solder to disperse the high-melting metal particles. Aa a result, the high-melting metal particles can be uniformly dispersed in solder in a short length of time. Accordingly, a solder preform which is obtained by the process for producing a solder preform according to the present invention can maintain a predetermined clearance between portions being soldered, and a sufficient bonding strength is obtained.

摘要翻译： [问题]将预定量的高熔点金属颗粒直接投入熔融焊料并搅拌的用于生产焊料预制件的常规方法需要长时间以通过搅拌分散高熔点金属颗粒。 因此，在以往的焊料预制体的制造方法中，在熔融焊料中溶解高熔点金属粒子发生搅拌，粒径变小。 如果半导体芯片和基板与含有直径减小的金属粒子的焊料预制体焊接，则被焊接的部分之间的间隔变窄，并且不能获得充分的接合强度。 解决问题的手段在本发明中，首先准备焊料中高熔点金属颗粒比例较高的预混合母合金，然后将预混合的母合金放入熔融焊料中以分散高熔点金属 粒子。 结果，高熔点金属颗粒可以在短时间内均匀地分散在焊料中。 因此，通过本发明的焊料预成型体的制造方法获得的焊料预成型体可以在被焊接的部分之间保持规定的间隙，并且获得充分的接合强度。

公开(公告)号：US20080277207A1

公开(公告)日：2008-11-13

申请号：US11597906

申请日：2004-06-01

申请人： Kan Kawasaki ,  Ikuo Asami ,  Takashi Ishii ,  Shun Fujimura ,  Satoshi Takasawa

发明人： Kan Kawasaki ,  Ikuo Asami ,  Takashi Ishii ,  Shun Fujimura ,  Satoshi Takasawa

IPC分类号： B66B11/08

CPC分类号： B66B11/0045 ,  B66B11/008

摘要： A machineroom-less elevator in which a counterweight is vertically moved behind a cage, with the cage and the counterweight being suspended in a jig back manner through a first and second diverting sheaves. In this machineroom-less elevator, a sufficiently large vertical stroke of the counterweight can be secured, while a durability of a hoist rope is improved. In addition, since no tensile difference is generated in respective parts of the hoist rope, vertical vibrations of the cage are prevented when the cage restarts a vertical movement. A traction sheave is disposed on one of right and left sidewalls of an elevator shaft. A first diverting sheave is disposed below and sufficiently apart from the traction sheave, and a second diverting sheave is disposed on a top of a rear wall of the elevator shaft. The traction sheave is disposed to be inclined relative to the sidewall such that a rotational axis thereof extends from the sidewall of the elevator shaft to the rear wall thereof, when viewed vertically from above.

摘要翻译： 一种无机械式电梯，其中配重在轿厢内垂直移动，其中轿厢和配重通过第一和第二转向滑轮以夹具方式悬挂。 在这种无机械式电梯中，可以确保配重的足够大的垂直行程，同时改善提升绳索的耐久性。 此外，由于在起重绳索的各部分中不产生拉伸差异，因此当轿厢重新开始垂直运动时，能够防止轿厢的垂直振动。 牵引滑轮设置在电梯井的右侧壁和左侧壁之一上。 第一转向滑轮设置在牵引滑轮的下方并且足够远离，并且第二转向滑轮设置在电梯井的后壁的顶部。 牵引滑轮设置成相对于侧壁倾斜，使得当从上方垂直观察时，其旋转轴线从电梯井的侧壁延伸到其后壁。

公开(公告)号：US20080237301A1

公开(公告)日：2008-10-02

申请号：US12073690

申请日：2008-03-07

申请人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

发明人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

IPC分类号： B23K35/14 ,  B22D29/00

CPC分类号： C22C13/00 ,  B21C37/02 ,  B21C37/04 ,  B22F1/0011 ,  B23K35/001 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C22C19/03 ,  H01L24/29

摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。

公开(公告)号：US07413055B2

公开(公告)日：2008-08-19

申请号：US10508550

申请日：2004-02-03

申请人： Kan Kawasaki ,  Ikuo Asami ,  Takashi Ishii ,  Kazuaki Miyakoshi ,  Masahiro Kuramitsu ,  Kazuhiro Izumi ,  Hiroshi Sano ,  Shigeru Takaishi ,  Shun Fujimura ,  Takanori Urata ,  Satoshi Takasawa ,  Masayuki Higashi

发明人： Kan Kawasaki ,  Ikuo Asami ,  Takashi Ishii ,  Kazuaki Miyakoshi ,  Masahiro Kuramitsu ,  Kazuhiro Izumi ,  Hiroshi Sano ,  Shigeru Takaishi ,  Shun Fujimura ,  Takanori Urata ,  Satoshi Takasawa ,  Masayuki Higashi

IPC分类号： B66B7/06 ,  B66B11/00

CPC分类号： B66B11/0015 ,  B66B11/004

摘要： In an elevator, a drive device, a traction sheave, and a weight-side stop portion are arranged above one of a pair of left and right cage-side guide rails, and a cage-side stop portion and speed governor are arranged above the other cage-side guide rail. A wide workspace is realized in the middle of the floor of the machinery chamber, since the control panel is arranged along the middle of the inside wall surface of the front face of the machinery chamber. Furthermore, provision of an additional supporting beam mounted in the building is unnecessary, since the machine beam can extend fully in the forwards/rearwards direction in the interior of the machinery chamber.

摘要翻译： 在电梯中，驱动装置，牵引滑轮和重量侧止动部配置在一对左右的轿厢侧导轨的上方，轿厢侧止动部和调速器配置在 其他笼式导轨。 由于控制面板沿着机械室前面的内壁面的中央配置，所以在机械室的底板的中部实现宽的工作空间。 此外，安装在建筑物中的附加支撑梁的设置是不必要的，因为机器梁可以在机械室的内部中沿前后方向完全延伸。

公开(公告)号：US07335925B2

公开(公告)日：2008-02-26

申请号：US10539926

申请日：2004-03-08

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.

摘要翻译： 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1， 安装在元件安装表面2a上。 在L表示主表面1a的长度方向上的长度a和H是底面2b与元件安装面2a之间的距离时，H / L的比例为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。

公开(公告)号：US20070215337A1

公开(公告)日：2007-09-20

申请号：US11587036

申请日：2005-09-20

申请人： Hideaki Morigami ,  Takashi Ishii

发明人： Hideaki Morigami ,  Takashi Ishii

IPC分类号： H01L23/36 ,  H01S5/022

CPC分类号： H01S5/02469 ,  H01L21/4871 ,  H01L23/36 ,  H01L2924/0002 ,  H01S5/02236 ,  H01S5/02492 ,  H01S5/4031 ,  Y10T29/4935 ,  H01L2924/00

摘要： Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material (10) is provided with the steps of placing the discharge wire (200) on a material (100, 50) to be approximately parallel to the main surface, and carrying out the discharging process on the material (100, 50) using the discharge wire (200) placed as described above.

摘要翻译： 提供一种由合金或复合材料制成的散热材料，其包括两种或更多种类型的元件，所述元件具有可形成至少安装激光元件的边缘部分的端面，其制造方法 以及包括散热材料的半导体激光装置。 散热材料（10）由包括两种或更多种元素的合金或复合材料制成，并且具有相对较大面积的主表面和与主表面相交的相对较小面积的次表面， 并且次表面包括使用放置线（200）在其上进行放电处理的表面，放电线（200）大致平行于主表面。 散热材料（10）的制造方法具有以下步骤：将放电线（200）放置在与主表面大致平行的材料（100,50）上，并对材料进行放电 （100,50），使用如上所述放置的放电线（200）。