公开(公告)号：US08178893B2

公开(公告)日：2012-05-15

申请号：US12087214

申请日：2006-12-21

申请人： Kouichi Takashima ,  Hideaki Morigami ,  Masashi Narita

发明人： Kouichi Takashima ,  Hideaki Morigami ,  Masashi Narita

IPC分类号： H01L33/64

CPC分类号： H01L24/27 ,  H01L23/14 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01S5/0213 ,  H01S5/02484 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29144 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 μm to 40 μm and a surface-direction diametrical size of 10 μm to 3 mm is 50/cm2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1 μm to 30 μm, an arithmetic mean roughness Ra of a roughness curve showing a surface roughness of Ra≦2 μm, and a maximum height roughness Rz of Rz≦15 μm, and fills and covers the recesses or protrusions, is formed.

摘要翻译： 本发明提供了一种半导体元件安装基板，其通过提高基板与另一构件之间的热传导效率，可以可靠地防止例如半导体激光器等发光元件通过发热引起不良操作 本身，充分利用金刚石复合材料的高导热性。 在半导体元件安装基板中，与发光元件等连接的连接面被完成，使得每单位面积的至少一个深度或高度为10μm〜40μm的凹部或突起的数量 10μm至3mm的面方向直径尺寸为50 / cm 2以下，在连接面上，由焊料或钎焊材料形成的涂层的厚度为1μm〜30μm 形成表示粗糙度曲线的算术平均粗糙度Ra，表示粗糙度Ra＆lt; 1lE;2μm，最大高度粗糙度Rz为Rz＆lt; 1lE;15μm，填充并覆盖凹部或突起。

公开(公告)号：US20090057705A1

公开(公告)日：2009-03-05

申请号：US12087214

申请日：2006-12-21

申请人： Kouichi Takashima ,  Hideaki Morigami ,  Masashi Narita

发明人： Kouichi Takashima ,  Hideaki Morigami ,  Masashi Narita

IPC分类号： H01L23/488 ,  H01L33/00 ,  H01L21/768

CPC分类号： H01L24/27 ,  H01L23/14 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01S5/0213 ,  H01S5/02484 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29144 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 μm to 40 μm and a surface-direction diametrical size of 10 μm to 3 mm is 50/cm2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1 μm to 30 μm, an arithmetic mean roughness Ra of a roughness curve showing a surface roughness of Ra≦2 μm, and a maximum height roughness Rz of Rz≦15 μm, and fills and covers the recesses or protrusions, is formed.

摘要翻译： 本发明提供了一种半导体元件安装基板，其通过提高基板与另一构件之间的热传导效率，可以可靠地防止例如半导体激光器等发光元件通过发热引起不良操作 本身，充分利用金刚石复合材料的高导热性。 在半导体元件安装基板中，与发光元件等连接的连接表面被完成，使得每单位面积的至少一个具有10μm至40μm的深度或高度的凹部或突起的数量 10um〜3mm的表面方向直径尺寸为50 / cm 2以下，在连接面上，由焊料或钎焊材料形成的涂层的厚度为1〜30μm 形成表示粗糙度Ra <=2μm的粗糙度曲线和Rz <=15μm的最大高度粗糙度Rz的算术平均粗糙度Ra，并且填充和覆盖凹部或突起。

公开(公告)号：US20070215337A1

公开(公告)日：2007-09-20

申请号：US11587036

申请日：2005-09-20

申请人： Hideaki Morigami ,  Takashi Ishii

发明人： Hideaki Morigami ,  Takashi Ishii

IPC分类号： H01L23/36 ,  H01S5/022

CPC分类号： H01S5/02469 ,  H01L21/4871 ,  H01L23/36 ,  H01L2924/0002 ,  H01S5/02236 ,  H01S5/02492 ,  H01S5/4031 ,  Y10T29/4935 ,  H01L2924/00

摘要： Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material (10) is provided with the steps of placing the discharge wire (200) on a material (100, 50) to be approximately parallel to the main surface, and carrying out the discharging process on the material (100, 50) using the discharge wire (200) placed as described above.

摘要翻译： 提供一种由合金或复合材料制成的散热材料，其包括两种或更多种类型的元件，所述元件具有可形成至少安装激光元件的边缘部分的端面，其制造方法 以及包括散热材料的半导体激光装置。 散热材料（10）由包括两种或更多种元素的合金或复合材料制成，并且具有相对较大面积的主表面和与主表面相交的相对较小面积的次表面， 并且次表面包括使用放置线（200）在其上进行放电处理的表面，放电线（200）大致平行于主表面。 散热材料（10）的制造方法具有以下步骤：将放电线（200）放置在与主表面大致平行的材料（100,50）上，并对材料进行放电 （100,50），使用如上所述放置的放电线（200）。

公开(公告)号：US20110138627A1

公开(公告)日：2011-06-16

申请号：US13026623

申请日：2011-02-14

申请人： Hideaki MORIGAMI ,  Takashi ISHII

发明人： Hideaki MORIGAMI ,  Takashi ISHII

IPC分类号： B21D53/02

CPC分类号： H01S5/02469 ,  H01L21/4871 ,  H01L23/36 ,  H01L2924/0002 ,  H01S5/02236 ,  H01S5/02492 ,  H01S5/4031 ,  Y10T29/4935 ,  H01L2924/00

摘要： Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material (10) is provided with the steps of placing the discharge wire (200) on a material (100, 50) to be approximately parallel to the main surface, and carrying out the discharging process on the material (100, 50) using the discharge wire (200) placed as described above.

摘要翻译： 提供一种由合金或复合材料制成的散热材料，其包括两种或更多种类型的元件，所述元件具有可形成至少安装激光元件的边缘部分的端面，其制造方法 以及包括散热材料的半导体激光装置。 散热材料（10）由包括两种或更多种元素的合金或复合材料制成，并且具有相对较大面积的主表面和与主表面相交的相对较小面积的次表面， 并且次表面包括使用放置线（200）在其上进行放电处理的表面，放电线（200）大致平行于主表面。 散热材料（10）的制造方法具有以下步骤：将放电线（200）放置在与主表面大致平行的材料（100,50）上，并对材料进行放电 （100,50），使用如上所述放置的放电线（200）。

公开(公告)号：US07528413B2

公开(公告)日：2009-05-05

申请号：US10494947

申请日：2002-10-16

申请人： Katsuhito Yoshida ,  Hideaki Morigami ,  Takahiro Awaji ,  Tetsuo Nakai

发明人： Katsuhito Yoshida ,  Hideaki Morigami ,  Takahiro Awaji ,  Tetsuo Nakai

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： C04B35/645 ,  C04B35/52 ,  C04B35/62842 ,  C04B2235/3817 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/9607 ,  H01L23/3732 ,  H01L2924/0002 ,  H01S5/02476 ,  Y10S438/929 ,  Y10T428/26 ,  Y10T428/2982 ,  Y10T428/30 ,  H01L2924/00

摘要： This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.

摘要翻译： 本发明涉及一种高导热性复合材料，其包括金刚石颗粒和铜基质，其可用作用于电子部件的电子散热器，特别是用于半导体激光器，高性能MPU（微处理单元）等），还涉及用于 相同的生产和散热器使用相同。 根据本发明的高导热性金刚石烧结体，特别地，可以提供具有高导热性以及热膨胀匹配的散热器，最适合于安装大型和高热负荷半导体芯片 ，例如高输出半导体激光器，高性能MPU等。此外，可以自由地控制热导率和热膨胀等性能，因此可以根据元件的特征和设计来选择最合适的散热器 要安装。

公开(公告)号：US5425491A

公开(公告)日：1995-06-20

申请号：US319011

申请日：1994-10-06

申请人： Katsuyuki Tanaka ,  Hideaki Morigami

发明人： Katsuyuki Tanaka ,  Hideaki Morigami

IPC分类号： B23K20/02 ,  H01L21/00 ,  H01L21/603 ,  B24B1/00

CPC分类号： H01L21/67138 ,  B23K20/025

摘要： A bonding tool capable of uniformly pressing all electrodes of a semiconductor element and surely bonding all the electrodes and leads, even if the end pressing surface of a tool end part of a bonding tool is enlarged with the large-sized and long-sized tendency of semiconductor elements, is provided in which an end pressing surface of a tool end part fitted to a shank is composed of a hard material, characterized in that the end pressing surface is gradually curved to form a concave surface from the peripheral part to the central part at an application temperature of the bonding tool and the degree of flatness of the concave end pressing surface is in the range of 1 to 5 .mu.m at the application temperature of the bonding tool.

摘要翻译： 即使焊接工具的工具端部的端部按压面被大尺寸和长尺寸的趋势扩大，也能够均匀地按压半导体元件的所有电极并且可靠地接合所有电极和引线的接合工具 半导体元件，其中工具端部装配到柄部的端部按压表面由硬质材料构成，其特征在于，端部按压表面逐渐弯曲以从周边部分到中心部分形成凹面 在接合工具的施加温度下，凹形端部按压面的平坦度在接合工具的施加温度为1〜5μm的范围内。

公开(公告)号：US5373731A

公开(公告)日：1994-12-20

申请号：US82828

申请日：1993-06-28

申请人： Katsuyuki Tanaka ,  Hideaki Morigami

发明人： Katsuyuki Tanaka ,  Hideaki Morigami

IPC分类号： B23K20/02 ,  H01L21/00 ,  G01B21/20

CPC分类号： H01L21/67138 ,  B23K20/025

摘要： A bonding tool capable of uniformly pressing all electrodes of a semiconductor element and surely bonding all the electrodes and leads, even if the end pressing surface of a tool end part of a bonding tool is enlarged with the large-sized and long-sized tendency of semiconductor elements, is provided in which an end pressing surface of a tool end part fitted to a shank is composed of a hard material, characterized in that the end pressing surface is gradually curved to form a concave surface from the peripheral part to the central part at an application temperature of the bonding tool and the degree of flatness of tile concave end pressing surface is in the range of 1 to 5 .mu.m at the application temperature of the bonding tool.

摘要翻译： 即使焊接工具的工具端部的端部按压面被大尺寸和长尺寸的趋势扩大，也能够均匀地按压半导体元件的所有电极并且可靠地接合所有电极和引线的接合工具 半导体元件，其中工具端部装配到柄部的端部按压表面由硬质材料构成，其特征在于，端部按压表面逐渐弯曲以从周边部分到中心部分形成凹面 在焊接工具的施加温度下，瓦楞凹面压入面的平坦度在焊接工具的施加温度为1〜5μm的范围内。

公开(公告)号：US08664088B2

公开(公告)日：2014-03-04

申请号：US13026623

申请日：2011-02-14

申请人： Hideaki Morigami ,  Takashi Ishii

发明人： Hideaki Morigami ,  Takashi Ishii

IPC分类号： H01L21/00

CPC分类号： H01S5/02469 ,  H01L21/4871 ,  H01L23/36 ,  H01L2924/0002 ,  H01S5/02236 ,  H01S5/02492 ,  H01S5/4031 ,  Y10T29/4935 ,  H01L2924/00

摘要： Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material (10) is provided with the steps of placing the discharge wire (200) on a material (100, 50) to be approximately parallel to the main surface, and carrying out the discharging process on the material (100, 50) using the discharge wire (200) placed as described above.

摘要翻译： 提供一种由合金或复合材料制成的散热材料，其包括两种或更多种类型的元件，所述元件具有可形成至少安装激光元件的边缘部分的端面，其制造方法 以及包括散热材料的半导体激光装置。 散热材料（10）由包括两种或更多种元素的合金或复合材料制成，并且具有相对较大面积的主表面和与主表面相交的相对较小面积的次表面， 并且次表面包括使用放置线（200）在其上进行放电处理的表面，放电线（200）大致平行于主表面。 散热材料（10）的制造方法具有以下步骤：将放电线（200）放置在与主表面大致平行的材料（100,50）上，并对材料进行放电 （100,50），使用如上所述放置的放电线（200）。

公开(公告)号：US20050051891A1

公开(公告)日：2005-03-10

申请号：US10494947

申请日：2002-10-16

申请人： Katsuhito Yoshida ,  Hideaki Morigami ,  Takahiro Awaji ,  Tetsuo Nakai

发明人： Katsuhito Yoshida ,  Hideaki Morigami ,  Takahiro Awaji ,  Tetsuo Nakai

IPC分类号： C04B35/645 ,  H01L23/373 ,  H01L23/34

CPC分类号： C04B35/645 ,  C04B35/52 ,  C04B35/62842 ,  C04B2235/3817 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/9607 ,  H01L23/3732 ,  H01L2924/0002 ,  H01S5/02476 ,  Y10S438/929 ,  Y10T428/26 ,  Y10T428/2982 ,  Y10T428/30 ,  H01L2924/00

摘要： This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.

摘要翻译： 本发明涉及一种高导热性复合材料，其包括金刚石颗粒和铜基质，其可用作用于电子部件的电子散热器，特别是用于半导体激光器，高性能MPU（微处理单元）等），还涉及用于 相同的生产和散热器使用相同。 根据本发明的高导热性金刚石烧结体，特别地，可以提供具有高导热性以及热膨胀匹配的散热器，最适合于安装大型和高热负荷半导体芯片 ，例如高输出半导体激光器，高性能MPU等。此外，可以自由地控制热导率和热膨胀等性能，因此可以根据元件的特征和设计来选择最合适的散热器 要安装。