公开(公告)号：US20110068149A1

公开(公告)日：2011-03-24

申请号：US12923319

申请日：2010-09-14

申请人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

发明人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

IPC分类号： B23K35/14

CPC分类号： C22C13/00 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3033 ,  B23K35/36

摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。

公开(公告)号：US10081852B2

公开(公告)日：2018-09-25

申请号：US12923319

申请日：2010-09-14

申请人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

发明人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

IPC分类号： B23K35/00 ,  C22C13/00 ,  B22F1/02 ,  B23K35/02 ,  B23K35/26 ,  B23K35/30 ,  B23K35/36

CPC分类号： C22C13/00 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3033 ,  B23K35/36

摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

公开(公告)号：US07793820B2

公开(公告)日：2010-09-14

申请号：US12073690

申请日：2008-03-07

申请人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

发明人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

IPC分类号： B23K35/22 ,  B23K35/24 ,  B23K35/36

CPC分类号： C22C13/00 ,  B21C37/02 ,  B21C37/04 ,  B22F1/0011 ,  B23K35/001 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C22C19/03 ,  H01L24/29

摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。

公开(公告)号：US07601625B2

公开(公告)日：2009-10-13

申请号：US11108908

申请日：2005-04-19

申请人： Chikage Noritake ,  Yoshitsugu Sakamoto ,  Akira Tanahashi ,  Hideki Okada ,  Tomomasa Yoshida

发明人： Chikage Noritake ,  Yoshitsugu Sakamoto ,  Akira Tanahashi ,  Hideki Okada ,  Tomomasa Yoshida

IPC分类号： H01L21/44

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29298 ,  H01L2224/325 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

摘要翻译： 一种制造具有焊料层的半导体器件的方法包括以下步骤：研磨半导体芯片的安装表面; 蚀刻芯片的安装表面; 在芯片的安装表面上形成电极; 按顺序组装芯片，焊料层和基体; 并且将芯片，焊料层和基底加热至等于或高于焊料层的固相线温度，使得焊料层回流以将芯片焊接在基底上。

公开(公告)号：US5919317A

公开(公告)日：1999-07-06

申请号：US568236

申请日：1995-12-06

申请人： Akira Tanahashi ,  Norihisa Imaizumi ,  Yuzi Otani ,  Takashi Nagasaka

发明人： Akira Tanahashi ,  Norihisa Imaizumi ,  Yuzi Otani ,  Takashi Nagasaka

IPC分类号： B23K35/02 ,  B23K35/36 ,  B23K35/363

CPC分类号： B23K35/3612 ,  B23K35/025 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/19105

摘要： Provided are a soldering flux or paste containing an organic substance which has at least two hydroxyl (--OH) groups in a molecule and of which the temperature at which the mass % becomes approximately 0% is not lower than approximately 170.degree. C. and not lower than the solid phase linear temperature of the solder, as measured by thermal gravimetry in which a flow rate of an air or nitrogen (N.sub.2) gas atmosphere is 200 ml/min and a rate of temperature rise is 10.degree. C./min, and a soldering method using the same. The soldering flux or paste of the present invention gives good wettability to a matrix to be bonded in a normal temperature profile and in a non-reductive atmosphere without leaving any residue.

摘要翻译： 提供了含有分子中具有至少两个羟基（-OH）基团并且质量％变为约0％的温度不低于约170℃的有机物质的焊剂或糊剂，而不是 低于焊料的固相线性温度，通过热重量法测定，其中空气或氮气（N 2）气体气体的流量为200ml / min，升温速率为10℃/ min， 和使用其的焊接方法。 本发明的助焊剂或糊剂对在正常温度曲线和非还原性气氛中键合的基质赋予良好的润湿性，而不留下任何残留物。

公开(公告)号：US07579212B2

公开(公告)日：2009-08-25

申请号：US11707961

申请日：2007-02-20

申请人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

发明人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

IPC分类号： H01L21/00

CPC分类号： H01L24/29 ,  H01L23/4827 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8482 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

摘要翻译： 半导体器件包括：半导体衬底; 基地会员 锡基焊料层; 第一金属层; 和第一合金层。 半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。 第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。 第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。

公开(公告)号：US20080237301A1

公开(公告)日：2008-10-02

申请号：US12073690

申请日：2008-03-07

申请人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

发明人： Naohiko Hirano ,  Akira Tanahashi ,  Yoshitsugu Sakamoto ,  Kaichi Tsuruta ,  Takashi Ishii ,  Satoshi Soga

IPC分类号： B23K35/14 ,  B22D29/00

CPC分类号： C22C13/00 ,  B21C37/02 ,  B21C37/04 ,  B22F1/0011 ,  B23K35/001 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C22C19/03 ,  H01L24/29

摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。

公开(公告)号：US20070176293A1

公开(公告)日：2007-08-02

申请号：US11707961

申请日：2007-02-20

申请人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

发明人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

IPC分类号： H01L23/48

CPC分类号： H01L24/29 ,  H01L23/4827 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8482 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

摘要翻译： 半导体器件包括：半导体衬底; 基地会员 锡基焊料层; 第一金属层; 和第一合金层。 半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。 第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。 第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。

公开(公告)号：US20060049521A1

公开(公告)日：2006-03-09

申请号：US11220979

申请日：2005-09-08

申请人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

发明人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

IPC分类号： H01L23/48

CPC分类号： H01L24/29 ,  H01L23/4827 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8482 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

公开(公告)号：US07361996B2

公开(公告)日：2008-04-22

申请号：US11220979

申请日：2005-09-08

申请人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

发明人： Kimiharu Kayukawa ,  Akira Tanahashi ,  Chikage Noritake ,  Shoji Miura

IPC分类号： H01L23/52 ,  H01L23/40 ,  H01L23/48

CPC分类号： H01L24/29 ,  H01L23/4827 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8482 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

摘要翻译： 半导体器件包括：半导体衬底; 基地会员 锡基焊料层; 第一金属层; 和第一合金层。 半导体基板通过第一金属层，第一合金层和锡基焊料层依次结合到基底构件。 第一合金层由第一金属层中的第一金属和锡基焊料层中的锡制成。 第一金属层由选自钛，铝，铁，钼，铬，钒和铁 - 镍 - 铬合金中的至少一种材料制成。