公开(公告)号：US07132184B2

公开(公告)日：2006-11-07

申请号：US11229498

申请日：2005-09-20

申请人： Shigeru Ogino ,  Satoshi Aoyama ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu ,  Satoshi Shiokawa

发明人： Shigeru Ogino ,  Satoshi Aoyama ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu ,  Satoshi Shiokawa

IPC分类号： H03M8/18

CPC分类号： H01M8/0662 ,  H01M8/04014 ,  H01M8/04097 ,  H01M8/0618

摘要： The fuel cell system according to the present invention comprises a reformer 12 for receiving a hydrocarbon fuel supply and generating a hydrogen-containing reformed gas by making use of a reforming reaction; a fuel cell assembly 14 for generating power after causing an anode to receive the reformed gas and causing a cathode to receive an oxygen-containing cathode gas; cathode off-gas supply flow path 20 for supplying a cathode off-gas, which is discharged from the cathode, to the reformer 12; and bypass flow path 24 for bypassing the cathode and directly supplying the cathode gas to the reformer 12 at the time of system warm-up.

摘要翻译： 根据本发明的燃料电池系统包括用于接收烃燃料供应并通过利用重整反应产生含氢重整气体的重整器12; 用于在使阳极接收重整气体并使阴极接收含氧阴极气体之后发电的燃料电池组件14; 用于将从阴极排出的阴极废气供给到重整器12的阴极废气供给流路20; 旁路流路24绕过阴极，在系统预热时将阴极气体直接供给重整器12。

公开(公告)号：US4948678A

公开(公告)日：1990-08-14

申请号：US468296

申请日：1990-01-22

申请人： Yoshio Shindou ,  Takashi Shimazu

发明人： Yoshio Shindou ,  Takashi Shimazu

IPC分类号： B05D7/14 ,  B05D7/00 ,  B05D7/24 ,  B32B15/08 ,  B32B15/092 ,  C08G18/40 ,  C08G18/58 ,  C08G59/40 ,  C09D175/04 ,  C25D13/06

CPC分类号： B05D7/51 ,  C08G18/4045 ,  C08G18/58 ,  C08G59/4028 ,  C09D175/04 ,  C08G2150/90 ,  Y10T428/12549 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12757 ,  Y10T428/12799

摘要： The present invention provides an organic composite plated steel sheet highly susceptible to cationic electrodeposition comprising a steel substrate plated with one selected from the group consisting of zinc, a zinc alloy, a zinc composite alloy, or aluminum, and a first layer of a less soluble chromate film having a water soluble content of 5% or less formed on the substrate in an amount of 10 to 150 mg as the total amount of chromium per square meter, and a second layer as a solid thin coating film of 0.1 to 2 .mu.m formed on the first layer, the second layer being formed with a coating composition containing 10 to 50% by weight of solids comprising:(a) 30% by weight or more of a bisphenol A type epoxy resin having a number average molecular weight of 300 to 100,000 based on the total solids in the coating composition;(b) a weight ratio of at least one curing agent selected from the group consisting of polyisocyanate compounds and block polyisocyanate compounds to the epoxy resin solid of 0.1 to 2.0;(c) 5 to 50% by weight of fumed silica having an average particle size of 0.1 to 100 nm based on the total solids in said coating composition;(d) at least one pigment selected from the group consisting of insoluble azo type, azo lake type, and phthalocyanine type organic pigments having an average size of 0.01 to 2 .mu.m in an amount of 0.1 to 15% by weight based on the total solids in the coating composition and in a weight ratio of the pigment to the fumed silica of 0.01 to 1.0; and(e) 40% or more of a ketone type organic solvent in the coating composition.

公开(公告)号：US08278657B2

公开(公告)日：2012-10-02

申请号：US12699974

申请日：2010-02-04

申请人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

发明人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

公开(公告)号：US08021958B2

公开(公告)日：2011-09-20

申请号：US12410654

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L21/78

CPC分类号： H01L21/76254

摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced is provided. An oxide film containing halogen is formed on each of surfaces of a single crystal semiconductor substrate and of a semiconductor substrate provided with a single crystal semiconductor layer separated from the single crystal semiconductor substrate, whereby impurities that exist on the surfaces of and inside the substrates are decreased. In addition, the single crystal semiconductor layer provided over the semiconductor substrate is irradiated with a laser beam, whereby crystallinity of the single crystal semiconductor layer is improved and planarity is improved.

摘要翻译： 提供了制造其中单晶半导体层的晶体缺陷减小的SOI衬底的方法。 在单晶半导体基板的表面和设置有与单晶半导体基板分离的单晶半导体层的半导体基板的各表面上形成含有卤素的氧化物膜，由此存在于基板的表面和内部的杂质为 减少。 此外，用半导体衬底上的单晶半导体层照射激光束，从而提高单晶半导体层的结晶度，提高平面度。

公开(公告)号：US20090261449A1

公开(公告)日：2009-10-22

申请号：US12410649

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78621

摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.

摘要翻译： 目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。 另一个目的是提供一种使用这种SOI衬底的半导体器件。 通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。 对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。 用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。 单晶半导体层和基底基板与第一氧化膜接合。 通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。 用激光照射留在基底基板上的单晶半导体层。 留在基底基板上的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。 然后，除去第二氧化膜。

公开(公告)号：US20070128484A1

公开(公告)日：2007-06-07

申请号：US10588218

申请日：2005-02-17

申请人： Shigeru Ogino ,  Satoshi Aoyama ,  Yasuhiro Izawa ,  Satoshi Shiokawa ,  Takashi Shimazu ,  Hiroshi Aoki ,  Hiroyuki Mitsui

发明人： Shigeru Ogino ,  Satoshi Aoyama ,  Yasuhiro Izawa ,  Satoshi Shiokawa ,  Takashi Shimazu ,  Hiroshi Aoki ,  Hiroyuki Mitsui

IPC分类号： H01M8/04

CPC分类号： H01M8/04089 ,  H01M4/92 ,  H01M4/94 ,  H01M8/04007 ,  H01M8/0612 ,  H01M8/0662 ,  H01M8/1213

摘要： A technology for preventing degradation of a hydrogen permeable metal layer in a fuel cell 210 is provided. A fuel cell system 200 including a fuel cell 210 with an anode which has the hydrogen permeable metal layer comprises a fuel cell controller 230 for controlling the operation status of the fuel cell system 200, a temperature parameter acquisition section for acquiring a temperature parameter of the hydrogen permeable metal layer, and a hydrogen permeable metal layer degradation prevention section which reduces the hydrogen partial pressure in an anode channel 212 for supplying fuel gas to the anode. If a temperature of the hydrogen permeable metal layer represented by the temperature parameter deviates from a specified temperature range, the fuel cell controller 230 cause the hydrogen permeable metal layer degradation prevention section to operate for preventing degradation of the hydrogen permeable metal layer.

摘要翻译： 提供了用于防止燃料电池210中的氢可渗透金属层的劣化的技术。 包括具有氢可渗透金属层的具有阳极的燃料电池210的燃料电池系统200包括用于控制燃料电池系统200的运行状态的燃料电池控制器230，用于获取燃料电池系统200的温度参数的温度参数获取部 氢可渗透金属层和氢可渗透金属层降解防止部，其降低用于向阳极供给燃料气体的阳极通道212中的氢分压。 如果由温度参数表示的氢可渗透金属层的温度偏离规定的温度范围，则燃料电池控制器230使氢可渗透金属层降解防止部分操作以防止氢可渗透金属层的劣化。

公开(公告)号：US20060257704A1

公开(公告)日：2006-11-16

申请号：US11442243

申请日：2006-05-30

申请人： Shigeru Ogino ,  Satoshi Aoyama ,  Satoshi Shiokawa ,  Takashi Shimazu ,  Hiroshi Aoki ,  Hiroyuki Mitsui

发明人： Shigeru Ogino ,  Satoshi Aoyama ,  Satoshi Shiokawa ,  Takashi Shimazu ,  Hiroshi Aoki ,  Hiroyuki Mitsui

IPC分类号： H01M8/10 ,  H01M8/04

CPC分类号： H01M8/04067 ,  H01M8/0258 ,  H01M8/0267 ,  H01M8/04007 ,  H01M8/0662 ,  H01M8/0687 ,  H01M8/1231 ,  H01M2008/1293 ,  H01M2300/0074

摘要： A fuel cell is made by laminating an anode channel 2 supplied with hydrogen or a hydrogen-containing gas gH, a cathode channel 3 supplied with oxygen or an oxygen-containing gas GO, and an electrolyte 4 arranged between the cathode channel and the anode channel. The electrolyte 4 is made by laminating a hydrogen separating metal layer for making hydrogen supplied to the anode channel 2 or hydrogen in a hydrogen-containing gas GH supplied to the anode channel 2 permeate; and a proton conductor layer made of ceramics, for establishing the hydrogen having permeated the hydrogen separating metal layer in a proton state and making it reach the cathode channel 3. In addition, the fuel cell has a coolant channel 5 for cooling the fuel cell 1. In the coolant channel 5, a low heat conducting section 55 having a heat conductivity smaller than that at a downstream side of a coolant C is formed at an inlet side of the coolant C.

摘要翻译： 燃料电池是通过层压供给氢气或含氢气体的阳极通道2，供给氧气或含氧气体G O 2的阴极通道3， 并且设置在阴极通道和阳极通道之间的电解质4。 电解质4是通过层压氢分离金属层来制造提供给阳极通道2的氢气或供给到阳极通道2渗透物的含氢气体G H 3中的氢; 以及由陶瓷制成的质子导体层，用于建立以质子状态渗透氢分离金属层的氢，使其到达阴极流路3.此外，燃料电池具有用于冷却燃料电池1的冷却剂通道5 在冷却剂通道5中，在冷却剂C的入口侧形成导热率小于冷却剂C的下游侧的导热部55。

公开(公告)号：US20060014064A1

公开(公告)日：2006-01-19

申请号：US11229498

申请日：2005-09-20

申请人： Shigeru Ogino ,  Satoshi Aoyama ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu ,  Satoshi Shiokawa

发明人： Shigeru Ogino ,  Satoshi Aoyama ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu ,  Satoshi Shiokawa

IPC分类号： H01M8/04 ,  H01M2/00

CPC分类号： H01M8/0662 ,  H01M8/04014 ,  H01M8/04097 ,  H01M8/0618

摘要： The fuel cell system according to the present invention comprises a reformer 12 for receiving a hydrocarbon fuel supply and generating a hydrogen-containing reformed gas by making use of a reforming reaction; a fuel cell assembly 14 for generating power after causing an anode to receive the reformed gas and causing a cathode to receive an oxygen-containing cathode gas; cathode off-gas supply flow path 20 for supplying a cathode off-gas, which is discharged from the cathode, to the reformer 12; and bypass flow path 24 for bypassing the cathode and directly supplying the cathode gas to the reformer 12 at the time of system warm-up.

公开(公告)号：US06776809B2

公开(公告)日：2004-08-17

申请号：US09860480

申请日：2001-05-21

申请人： Takashi Shimazu

发明人： Takashi Shimazu

IPC分类号： G01B338

CPC分类号： H01M8/0631 ,  B01B1/005 ,  B01F3/022 ,  B01J19/2485 ,  B01J2219/00117 ,  B01J2219/00128 ,  B01J2219/00159 ,  C01B3/48 ,  C01B3/583 ,  C01B2203/0205 ,  C01B2203/0288 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0844 ,  C01B2203/085 ,  C01B2203/0894 ,  C01B2203/1205 ,  C01B2203/1223 ,  C01B2203/1241 ,  C01B2203/1247 ,  C01B2203/1276 ,  C01B2203/1294 ,  C01B2203/1604 ,  C01B2203/1638 ,  C01B2203/82 ,  H01M8/0612 ,  Y02P20/142

摘要： A heat exchanger 32 comprises a first heat exchanger 40 for allowing heat to be exchanged between water and a reformed gas from a reforming reactor, a second heat exchanger 50 for spraying and vaporizing water in the reformed gas from the first heat exchanger 40, and a third heat exchanger 60 for vaporizing unvaporized or precipitated water. The reformed gas from the reforming reactor is cooled by the heating and vaporizing of water, and is mixed with the vaporized water and fed as mixed gas to a water gas shift reactor. The processes of cooling the reformed gas, heating and vaporizing of the water, and mixing the reformed gas and steam are completed in the heat exchanger 32, making it possible to design a smaller, simpler, and more efficient apparatus.

摘要翻译： 热交换器32包括第一热交换器40，用于允许热量与来自重整反应器的重整气体之间的热交换;第二热交换器50，其用于喷射和蒸发来自第一热交换器40的重整气体中的水， 用于蒸发未蒸发或沉淀的水的第三热交换器60。 来自重整反应器的重整气体通过水的加热和蒸发而被冷却，并与蒸发的水混合并作为混合气体进料至水煤气变换反应器。 在热交换器32中完成冷却重整气体，水的加热和蒸发以及混合重整气体和蒸汽的过程，使得可以设计更小，更简单和更有效的装置。

公开(公告)号：US06338472B1

公开(公告)日：2002-01-15

申请号：US09572428

申请日：2000-05-17

申请人： Takashi Shimazu ,  Hiroshi Aoki

发明人： Takashi Shimazu ,  Hiroshi Aoki

IPC分类号： B01F304

CPC分类号： B01J4/002 ,  B01F3/04049 ,  B01F5/0256 ,  B01F2215/0098 ,  B01J19/26 ,  B01J2219/00164 ,  H01M8/04126

摘要： Mists atomized from siphon type two-fluid nozzles 14a and 14b are made to collide with each other within a secondary gas intake conduit 16 and secondary gas is supplied toward a collision point of the mists. A flow control plate 22 is provided within the secondary gas intake conduit 16 at a point upstream from the collision point to ensure that the secondary gas does not interfere with the collision of the mists and also to promote fine mists generated by the collision of the mists to mix with the secondary gas. Further, a secondary nozzle 24 is provided at the tip of the secondary gas intake conduit 16 to jet the secondary gas including the fine mists from the secondary nozzle 24. In the case of applying this mist atomizer 10 to the fuel cell 30, droplets and liquid water in the process gas is separated and removed at the mounting portion of the mist atomizer 10 in order to selectively supply mist of equal-sized particles only into the fuel cell. The collected water is stored in the supply water tank temporarily and supplied again to the two-fluid nozzle for reuse.

摘要翻译： 从虹吸式双流体喷嘴14a和14b雾化的雾气在二次进气导管16内相互碰撞，向气体的碰撞点供给二次气体。 流量控制板22设置在次级进气管道16内的碰撞点上游的一个点处，以确保二次气体不会干扰雾气的碰撞，并且还促进由雾气碰撞产生的细雾 与二次气体混合。 此外，二次喷嘴24设置在二次气体吸入管16的前端，以从二次喷嘴24喷射包括细雾的二次气体。在将该雾化器10应用于燃料电池30的情况下， 处理气体中的液态水在雾化器10的安装部分处被分离和除去，以便选择性地仅将等量粒子的雾供给到燃料电池中。 收集的水临时储存在供水箱中，并再次供给到双流体喷嘴以供再利用。