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公开(公告)号：US07619896B2
公开(公告)日：2009-11-17
申请号：US11658565
申请日：2005-07-26
IPC分类号： H05K7/20
摘要： The present invention improves heat dissipation of an electrical junction box. An electrical junction box includes a housing which houses a control circuit board disposed perpendicular to a power distribution board. The control circuit board includes a control circuit constructed on one side of an insulating substrate, electrical components mounted on the control circuit, and a heat dissipating means mounted on the other side. The power distribution board includes a plurality of bus bars laminated via a plurality of insulating layers. Consequently, heat generated by the electrical components can be dissipated efficiently by the heat dissipating means, thereby improving heat dissipation of the electrical junction box.
摘要翻译： 本发明改善了电接线盒的散热。 电接线盒包括容纳垂直于配电板设置的控制电路板的壳体。 该控制电路板包括一个控制电路，该控制电路构造在绝缘基板的一侧，安装在该控制电路上的电气元件和一个安装在另一侧的散热装置。 配电板包括通过多个绝缘层层叠的多个汇流条。 因此，可以通过散热装置有效地消散由电气部件产生的热量，从而改善电接线盒的散热。
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公开(公告)号：US20090212387A1
公开(公告)日：2009-08-27
申请号：US12359635
申请日：2009-01-26
申请人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
发明人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76224 , H01L21/823481 , H01L29/78
摘要： A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.
摘要翻译： 在半导体衬底上形成有在半导体衬底上形成图案的第一绝缘膜作为掩模的沟槽; 将第二绝缘膜嵌入沟槽并平坦化; 选择性地去除第一绝缘膜的上部，暴露第二绝缘膜的侧面的一部分; 第二绝缘膜的一部分被各向同性地去除; 选择性地去除剩余的第一绝缘膜的下部; 然后将剩余的第二绝缘膜的一部分进一步各向同性地去除，使得第二绝缘膜的上表面距离半导体衬底的表面处于预定高度，具有最小锥角为90°或更大的锥形为 形成在第二绝缘膜的侧面上，并且形成STI。
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公开(公告)号：US20060042756A1
公开(公告)日：2006-03-02
申请号：US11211748
申请日：2005-08-26
IPC分类号： C23F1/00
摘要： A semiconductor manufacturing apparatus for cleaning a semiconductor substrate comprises a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical regarded as a waste chemical an auxiliary fluid, and thereby heats the waste chemical, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical by heat exchange, and a pipe in which the new chemical having the temperature raised in the heat exchanger is supplied to the chemical bath.
摘要翻译： 用于清洗半导体衬底的半导体制造装置包括高温循环型化学池，其填充有用于半导体衬底的清洁的化学品，并且其中化学品被循环和重复使用;排水机构，其排出化学品 辅助流体供给机构，将排出后的化学物质作为废弃化学品添加辅助流体，从而对废弃化学品进行加热，临时储存加热的废弃化学品的热交换器和新的化学物质 允许流动，并且通过热交换来冷却废化学物质并提高新化学品的温度，并且将在热交换器中升温的新化学品供应到化学浴中的管道。
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公开(公告)号：US06645876B2
公开(公告)日：2003-11-11
申请号：US10014609
申请日：2001-12-14
申请人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
发明人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/3081 , H01L21/31111 , H01L21/67086
摘要： A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.
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公开(公告)号：US5792326A
公开(公告)日：1998-08-11
申请号：US782390
申请日：1997-01-13
申请人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
发明人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C23C16/402 , C23C16/4402 , C23C8/12 , C01B2201/60
摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices. Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10-20 vol % of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
摘要翻译： 臭氧发生器（10），其在施加高压下向臭氧发生电池（11）供应进料气体，并且通过臭氧气体输送路径（由管道（14）和（15）组成）输送臭氧气体） 在臭氧发生电池（11）中产生的臭氧气体输送路径的特征在于，臭氧气体输送路径具有用于除去NOx，HF和SO x中的至少一种的装置（在附图中，用于除去NOx的装置），臭氧气体 从臭氧发生电池（11）通过所述去除装置，由此在所述臭氧气体中的NOx，HF和SO x中的至少一种在被输送到后续阶段之前被去除。 产物臭氧根本不被Cr化合物污染或污染不足，导致制造高度集成的半导体器件的任何实际问题。 或者，臭氧发生器（10）包括具有用于供应进料气体的入口（8）的臭氧发生电池（11），用于排出产生的臭氧的高压施加装置（35）和出口（29），以及臭氧输送路径 （30）和（31）用于输送生成的臭氧的特征在于，使用补充有10〜20体积％的二氧化碳和/或一氧化碳（2）的氧（1）作为原料气。 这样生成的臭氧在Cr化合物的含量上显着地很低，因此可以适当地用于形成金属氧化物，特别是氧化硅。
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公开(公告)号：US5732120A
公开(公告)日：1998-03-24
申请号：US858892
申请日：1997-05-19
IPC分类号： G01N23/223 , G01N23/225
CPC分类号： G01N23/225 , G01N23/223 , G01N2223/076
摘要： A fluorescent X-ray analyzing apparatus includes a source of excitation (2) for irradiating a silicon-based sample (S) with primary X-rays (B2) to excite the silicon-based sample (S), a detector (4) for detecting fluorescent X-rays (B5) emitted from the silicon-based sample (S), and an analyzer (6) for analyzing elements contained in the silicon-based sample (S) based on a result of detection performed by the detector (4). The primary X-rays (B2) emitted from the source of excitation (2) have a wavelength higher than, but in the vicinity of a wavelength at an Si--K absorption edge so that generation of fluorescent X-rays (B5) of Si is suppressed to minimize a noise which would occur during detection of fluorescent X-rays (B5) of Na and Al to thereby accomplish an accurate analysis of a minute quantity of NA and Al contained in the sample (S).
摘要翻译： 一种荧光X射线分析装置，包括用于向硅基样品（S）照射初级X射线（B2）以激发硅基样品（S）的激发源（2），用于 检测从硅基样品（S）发射的荧光X射线（B5）;以及分析器（6），用于基于检测器（4）执行的检测结果来分析包含在硅基样品（S）中的元素 ）。 从激发源（2）发射的初级X射线（B 2）具有比Si-K吸收边缘处的波长高的波长，但是在Si-K吸收边缘的波长附近，因此产生Si的荧光X射线（B5） 被抑制以使在Na和Al的荧光X射线（B5）的检测期间将发生的噪声最小化，从而实现样品（S）中包含的微量的NA和Al的精确分析。
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公开(公告)号：US5497407A
公开(公告)日：1996-03-05
申请号：US158272
申请日：1993-11-29
IPC分类号： G01N23/223
CPC分类号： G01N23/223 , G01N2223/076
摘要： A contaminating-element analyzing method enables precise identification of contaminating elements and precise calculation of concentrations thereof by eliminating a broad peak waveform due to Rayleigh scattering and Compton scattering and a background waveform from a measured waveform of a contaminated sample. A blank sample or samples are irradiated by an X-ray beam under a constant condition to obtain a plurality of measured waveforms of fluorescent X-rays, and the plurality of measured waveforms are averaged to obtain a blank waveform. Then a contaminated sample is irradiated by the X-ray beam under the same condition as that for the blank sample to obtain a measured waveform of fluorescent X-rays. The blank waveform is subtracted from the measured waveform of contaminated sample, and then the contaminating elements are identified and the concentrations thereof are calculated on the basis of the waveform data after the subtraction process.
摘要翻译： 通过消除由于瑞利散射和康普顿散射引起的宽峰波形以及来自受污染样品的测量波形的背景波形，污染元素分析方法能够精确地识别污染元素并精确计算其浓度。 在恒定条件下通过X射线束照射空白样品或样品，以获得多个测量的荧光X射线波形，并且将多个测量波形平均以获得空白波形。 然后在与空白样品相同的条件下用X射线束照射被污染的样品，以获得测量的荧光X射线波形。 从污染样品的测量波形中减去空白波形，然后识别污染元素，并根据减法处理后的波形数据计算其浓度。
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公开(公告)号：US5422925A
公开(公告)日：1995-06-06
申请号：US116750
申请日：1993-09-07
IPC分类号： G01N23/223
CPC分类号： G01N23/223 , G01N2223/076
摘要： A contaminating-element analyzing method and an apparatus of the same are disclosed. Differential smoothing process is performed for a measured waveform of a fluorescent X-ray obtained from an object to be measured so as to detect a peak of the measured waveform, the object containing a contaminating element. A model function with variables which are initial parameters with respect to each peak of the measured waveform is provided so as to constitute a model waveform. A nonlinear optimizing process is performed using the method of least squares of the model waveform and the measured waveform so as to decide initial parameters of each model function and to obtain discriminated waveforms. A contaminating element is identified corresponding to each of the discriminated waveforms and obtaining an integrated intensity of a discrete waveform of each of the identified contaminating elements. A background intensity is obtained corresponding to a measured waveform of a fluorescent X-ray obtained from a non-contaminating object which does not contain any contaminating element. The background intensity is subtracted from an integrated intensity of a discrete waveform of each contaminating element.
摘要翻译： 公开了一种污染元素分析方法及其装置。 对于从被测量物体获得的荧光X射线的测量波形进行微分平滑处理，以便检测测量波形的峰值，该物体含有污染元素。 提供具有相对于测量波形的每个峰值的初始参数的变量的模型函数，以构成模型波形。 使用模型波形和测量波形的最小二乘法进行非线性优化处理，以确定每个模型函数的初始参数并获得鉴别波形。 识别对应于每个识别波形的污染元件，并获得每个识别的污染元件的离散波形的积分强度。 对应于从不含任何污染元素的非污染物体获得的荧光X射线的测量波形获得背景强度。 从每个污染元素的离散波形的积分强度中减去背景强度。
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公开(公告)号：US4929257A
公开(公告)日：1990-05-29
申请号：US330581
申请日：1989-03-30
CPC分类号： B24D3/02 , C09K3/1463 , C23F3/00
摘要： An abrasive composition comprising: an aluminous abrasive, preferably having an average particle size of 0.5-10 .mu.m and a concentration of 1 to 25% by weight; nickel sulfamate and/or sulfate, preferably having a concentration of 0.5 to 10% by weight; magnesium nitrate, preferably having a concentration of 0.1 to 12% by weight and water, the composition preferably having a pH of 4 to 7. This abrasive composition produces a superior effect, particularly a reduction of protrusions and pits and deep scratches when used for polishing an aluminum-based substrate for a magnetic recording disc.
摘要翻译： 一种磨料组合物，其包含：优选具有0.5-10μm平均粒径和1至25重量％浓度的铝磨料; 氨基磺酸镍和/或硫酸盐，优选浓度为0.5至10重量％; 硝酸镁，优选具有0.1至12重量％的浓度和水，该组合物优选具有4至7的pH。该研磨组合物在用于抛光时产生优异的效果，特别是突起和凹坑的减少以及深刻的划痕 用于磁记录盘的铝基基板。
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公开(公告)号：US20120052600A1
公开(公告)日：2012-03-01
申请号：US13217736
申请日：2011-08-25
IPC分类号： H01L21/66 , H01L21/306 , B65D85/86 , B05C11/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32194 , G05B2219/32198 , G05B2219/45031 , Y02P90/22
摘要： A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
摘要翻译： 一种半导体器件的制造方法，包括：在第一处理装置中以第一处理顺序对多个晶片执行第一处理; 在所述第一处理中获得关于所述多个晶片中的每一个的处理量; 通过在第一处理之后的第二处理装置中的第二处理来获得关于多个晶片中的每一个的处理量; 通过所述第一处理，通过所述第一处理和相对于所述多个晶片中的每一个处理的量，通过所述第二处理来确定与所述第一处理顺序不同的第二处理顺序相对于所述多个晶片中的每一个的处理量; 以及在所述第二处理装置中以所述第二处理顺序对所述多个晶片执行所述第二处理。
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