公开(公告)号：US08829517B2

公开(公告)日：2014-09-09

申请号：US13810944

申请日：2011-07-14

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66

CPC分类号： H01L29/78693 ,  G02F1/13458 ,  G02F1/136227 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/66969

摘要： A TFT substrate (20a) includes: an insulating substrate (10a); a plurality of source terminals (15) located on the insulating substrate (10a); and a first terminal cover (24) covering part of each of the source terminals (15) and made of an oxide semiconductor. The first terminal cover (24) is removed in a region R between adjacent ones of the source terminals (15).

摘要翻译： TFT基板（20a）包括：绝缘基板（10a）; 位于绝缘基板（10a）上的多个源极端子（15）; 以及覆盖每个源极端子（15）的一部分并由氧化物半导体制成的第一端子盖（24）。 在相邻的源极端子（15）之间的区域R中去除第一端子盖（24）。

公开(公告)号：US20130302929A1

公开(公告)日：2013-11-14

申请号：US13979302

申请日：2012-01-25

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/08

CPC分类号： H01L33/08 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/1345 ,  G02F2001/136231 ,  G02F2201/501

摘要： In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film.

摘要翻译： 在有源矩阵基板的显示区域中，设置由感光性有机绝缘膜构成的层间绝缘膜，与层间绝缘膜不同的绝缘膜，以及形成在层间绝缘膜的表面上的多个像素电极。 在有源矩阵基板的非显示区域中，形成从显示区域延伸的引线。 在密封构件的形成区域中，除去层间绝缘膜，设置绝缘膜以覆盖引线的一部分，并且密封构件直接形成在绝缘膜的表面上。

公开(公告)号：US20120307173A1

公开(公告)日：2012-12-06

申请号：US13578371

申请日：2011-02-16

申请人： Tetsuo Fujita ,  Yoshihito Hara ,  Yukinobu Nakata

发明人： Tetsuo Fujita ,  Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/36 ,  G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/136286 ,  H01L27/1288

摘要： A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.

摘要翻译： 一种显示装置的制造方法，其特征在于，具有以下步骤：依次层叠第一导电膜和第二导电膜的多层结构，除去第二导电膜的一部分，形成第一导电膜 不与第二导电膜重叠，由此从多层结构形成电极部分，在其上形成有电极部分的基板上形成由感光材料制成的平坦化膜以覆盖电极部分，从而形成接触孔 在平坦化膜的表面上形成像素电极，以覆盖位于接触孔内部的第一导电膜的一部分，并从平坦化膜露出。

公开(公告)号：US20120298988A1

公开(公告)日：2012-11-29

申请号：US13522778

申请日：2010-10-25

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention provides a highly reliable circuit board that includes TFTs a semiconductor layer of which is formed from an oxide semiconductor; and low-resistance aluminum wirings. The circuit board of the present invention includes an oxide semiconductor layer; source wirings; and drain wirings, wherein each of the source wirings and the drain wirings includes a portion in contact with the semiconductor layer, portions of the source wirings in contact with the semiconductor layer and respective portions of the drain wirings in contact with the semiconductor layer spacedly facing each other, and the source wirings and the drain wirings are formed by stacking a layer formed from a metal other than aluminum and a layer containing aluminum.

摘要翻译： 本发明提供一种高度可靠的电路板，其包括其半导体层由氧化物半导体形成的TFT; 和低电阻铝布线。 本发明的电路板包括氧化物半导体层; 源线; 和漏极布线，其中源极布线和漏极布线中的每一个包括与半导体层接触的部分，源极布线的与半导体层接触的部分以及与半导体层间隔开的接触的漏极布线的相应部分 并且源极布线和漏极布线通过层叠由铝以外的金属和含有铝的层形成的层而形成。

公开(公告)号：US20120044446A1

公开(公告)日：2012-02-23

申请号：US13265924

申请日：2010-01-20

申请人： Yoshihito Hara ,  Yukinobu Nakata ,  Keizoh Watanabe

发明人： Yoshihito Hara ,  Yukinobu Nakata ,  Keizoh Watanabe

IPC分类号： G02F1/1343 ,  H01J9/24

CPC分类号： G02F1/134309 ,  G02F1/133707 ,  G02F1/1393

摘要： The present invention provides: a vertical alignment liquid crystal display device using comb electrodes for voltage application to liquid crystals, the device being capable of reducing alignment defects of liquid crystals occurring at tips of electrodes, having a high contrast and white brightness, and being excellent in display properties; and a method for producing the same. The present invention is a method for producing a liquid crystal display device comprising a pair of substrates, a liquid crystal layer between the substrates, and an electrode for voltage application in the liquid crystal layer, the method comprising the steps of: resist pattern formation in which a resist film formed on a conductive film is exposed through a photomask; and an electrode pattern formation in which the conductive film is etched through the resist pattern, the photomask having a light-shielding or light-transmitting pattern including a core portion and a plurality of branch portions extending from the core portion, the branch portions each having a wide part at the tip.

摘要翻译： 本发明提供一种使用梳状电极对液晶施加电压的垂直取向液晶显示装置，该装置能够减少电极前端发生的液晶的取向缺陷，具有高对比度和白色亮度，并且优异 在显示属性; 及其制造方法。 本发明是一种液晶显示装置的制造方法，其特征在于，包括一对基板，基板之间的液晶层和液晶层中的电压施加用电极，该方法包括以下步骤： 在导电膜上形成的抗蚀剂膜通过光掩模曝光; 以及通过抗蚀剂图案蚀刻导电膜的电极图案形成，所述光掩模具有包含芯部的光屏蔽或透光图案，以及从所述芯部延伸的多个分支部，所述分支部具有 很大一部分在提示。

公开(公告)号：US06744070B2

公开(公告)日：2004-06-01

申请号：US10198275

申请日：2002-07-17

申请人： Yoshinori Shimada ,  Masao Kawaguchi ,  Hiroshi Ishibashi ,  Yukinobu Nakata ,  Keiichi Akamatsu

发明人： Yoshinori Shimada ,  Masao Kawaguchi ,  Hiroshi Ishibashi ,  Yukinobu Nakata ,  Keiichi Akamatsu

IPC分类号： H01L2976

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458 ,  H01L29/4908

摘要： In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

摘要翻译： 在用于有源矩阵液晶显示装置的薄膜晶体管中，栅极信号线，源极信号线和漏极引出电极都具有三层结构。 具体地，这些构件中的每一个由由钛膜制成的下层，由铝膜制成的中间层和由含氮的钛膜制成的上层构成。 由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成，因此它们对氮化硅膜具有优异的粘附性。 因此，可以抑制制造过程中的膜剥离等。 此外，在铝膜下方提供钛膜有助于降低铝膜的电阻。

公开(公告)号：US09030619B2

公开(公告)日：2015-05-12

申请号：US13992440

申请日：2011-11-29

申请人： Atsuhito Murai ,  Yukinobu Nakata ,  Shingo Kawashima ,  Jun Nishimura

发明人： Atsuhito Murai ,  Yukinobu Nakata ,  Shingo Kawashima ,  Jun Nishimura

IPC分类号： G02F1/1362 ,  G02F1/1335 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1337 ,  G02F1/1333 ,  H01L27/32

CPC分类号： G02F1/136209 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133707 ,  G02F2001/136222 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/3272 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.

摘要翻译： 根据本发明的半导体器件（100A）包括：薄膜晶体管（10）; 形成在薄膜晶体管（10）上的第一绝缘层（9）; 形成在第一绝缘层（9）上并具有孔（21a）的第二绝缘层（11）; 以及当沿着基板（1）的法线观察时，被布置成与氧化物半导体层（5）重叠的不透明层（12a）。 不透明层（12a）已经形成在孔（21a）中。 不透明层（12a）具有凸起且弯曲的上表面，并且第二绝缘层（11）的上表面比不透明层（12a）的上表面更靠近基板（1）。

公开(公告)号：US08753921B2

公开(公告)日：2014-06-17

申请号：US13823247

申请日：2011-09-09

申请人： Tetsuo Fujita ,  Yukinobu Nakata ,  Tohru Daitoh

发明人： Tetsuo Fujita ,  Yukinobu Nakata ,  Tohru Daitoh

IPC分类号： H01L21/00 ,  H01L21/16 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： H01L29/66969 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

摘要： A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.

摘要翻译： 根据本发明的半导体器件的制造方法包括溅射靶（100A）的步骤。 目标（100A）包括位于同时具有间隙的多个目标瓦片（11A） 用于支撑所述多个目标瓦片（11A）的背板（15A）; 以及设置在背板（15A）和多个目标瓦片（11A）之间的接合构件（17A）。 多个目标瓦片（11A）各自包含In，Ga和Zn。 当从多个目标瓦片（11A）所在的一侧沿着与其正交的方向看目标（100A）时，多个目标瓦片（11A）均小于绝缘基板（1），并且 接合部件（17A）不能通过间隙看到。

公开(公告)号：US20140014951A1

公开(公告)日：2014-01-16

申请号：US13979478

申请日：2012-01-05

申请人： Shingo Kawashima ,  Yukinobu Nakata ,  Atsuhito Murai ,  Shinya Tanaka

发明人： Shingo Kawashima ,  Yukinobu Nakata ,  Atsuhito Murai ,  Shinya Tanaka

IPC分类号： H01L29/786

CPC分类号： H01L29/78693 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4).

摘要翻译： 根据本发明的半导体器件（100A）包括：具有第一接触区域（4a）和第二接触区域（4b）的氧化物半导体层（4）和位于第一接触区域之间的沟道区域（4c） 4a）和第二接触区域（4b）; 形成在所述氧化物半导体层（4）上以与所述第一接触区域（4a）接触的源电极（5）; 以及形成在所述氧化物半导体层（4）上以与所述第二接触区域（4b）接触的漏电极（6）。 氧化物半导体层（4）的所有侧面都位于栅电极（2）的上方。 源电极（5）的宽度大于氧化物半导体层（4）的宽度; 并且所述漏电极（6）的宽度大于所述氧化物半导体层（4）的宽度。

公开(公告)号：US20140009713A1

公开(公告)日：2014-01-09

申请号：US13992440

申请日：2011-11-29

申请人： Atsuhito Murai ,  Yukinobu Nakata ,  Shingo Kawashima ,  Jun Nishimura

发明人： Atsuhito Murai ,  Yukinobu Nakata ,  Shingo Kawashima ,  Jun Nishimura

IPC分类号： G02F1/1335 ,  H01L29/66 ,  H01L29/786

CPC分类号： G02F1/136209 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133707 ,  G02F2001/136222 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/3272 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.

摘要翻译： 根据本发明的半导体器件（100A）包括：薄膜晶体管（10）; 形成在薄膜晶体管（10）上的第一绝缘层（9）; 形成在第一绝缘层（9）上并具有孔（21a）的第二绝缘层（11）; 以及当沿着基板（1）的法线观察时，被布置成与氧化物半导体层（5）重叠的不透明层（12a）。 不透明层（12a）已经形成在孔（21a）中。 不透明层（12a）具有凸起且弯曲的上表面，并且第二绝缘层（11）的上表面比不透明层（12a）的上表面更靠近基板（1）。