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21.发明授权Carbon nanostructure, capacitor, method for processing carbon nanostructure, and method for producing carbon nanostructure 有权碳纳米结构，电容器，碳纳米结构的加工方法和碳纳米结构的制造方法公开(公告)号：US09305711B2
公开(公告)日：2016-04-05
申请号：US14003332
申请日：2012-03-08
CPC分类号： H01G9/048 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C01B32/168 , C01B32/176 , C01B2202/02 , C01B2202/22 , C01B2202/34 , C01B2202/36 , H01G11/36 , Y02E60/13
摘要： A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.
摘要翻译： 可以控制碳纳米结构的几何形状和电气特性。 根据本发明的用于处理碳纳米结构的方法包括以下步骤：制备碳纳米结构（例如碳纳米管）（CNT制备步骤）; 并在使碳纳米管振动的同时将碳纳米管暴露于能量束（例如电子束）（曝光步骤）。 这有助于碳纳米管的长度和电特性的改变。
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22.发明授权Apparatus for manufacturing carbon nanostructure and method for manufacturing carbon nanostructure 有权用于制造碳纳米结构的装置和用于制造碳纳米结构的方法公开(公告)号：US09162891B2
公开(公告)日：2015-10-20
申请号：US13702710
申请日：2012-02-21
申请人： Takeshi Hikata , Soichiro Okubo
发明人： Takeshi Hikata , Soichiro Okubo
IPC分类号： C01B31/02 , B82Y40/00 , B01J19/08 , B01J4/00 , B01J37/34 , B01J23/745 , B01J35/00 , B82Y30/00 , B01J35/06
CPC分类号： C01B31/0206 , B01J4/001 , B01J19/087 , B01J23/745 , B01J35/0033 , B01J35/06 , B01J37/34 , B01J37/348 , B01J2208/00415 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/162 , Y10S977/891
摘要： An apparatus for manufacturing a carbon nanostructure and a method for manufacturing a carbon nanostructure that can achieve an increase in length and shape stabilization of the carbon nanostructure can be obtained. A manufacturing apparatus for a carbon nanostructure includes a catalyst member on which a carbon nanostructure is grown, a source gas supply unit and a source gas supply pipe, a coil, and a heater. The source gas supply unit and the source gas supply pipe supply the catalyst member with carbon for forming the carbon nanotube. The coil applies a gradient magnetic field (e.g., a cusped magnetic field indicated by magnetic flux line whose magnetic field strength gradually increases from one surface of the catalyst member to the other surface opposite to the one surface. The heater heats the catalyst member.
摘要翻译： 可以获得碳纳米结构体的制造装置和碳纳米结构体的制造方法，能够实现碳纳米结构的长度和形状的稳定化。 碳纳米结构体的制造装置包括生长碳纳米结构的催化剂构件，源气体供给单元和源气体供给管，线圈和加热器。 源气体供给单元和源气体供给管为催化剂构件供给形成碳纳米管的碳。 线圈施加梯度磁场（例如，磁场强度从催化剂部件的一个表面逐渐增加到与该一个表面相反的另一个表面的磁通线所表示的切割磁场，加热器加热催化剂部件。
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23.发明授权公开(公告)号：US08592338B2
公开(公告)日：2013-11-26
申请号：US10590011
申请日：2004-12-27
申请人： Takeshi Hikata
发明人： Takeshi Hikata
CPC分类号： B82Y40/00 , B01J23/75 , B01J23/8906 , B01J23/8913 , B01J35/06 , B01J37/00 , B01J37/06 , B82Y30/00 , C01B32/162
摘要： A catalyst structure that allows a carbon nanotube having a desired shape and with larger length to be obtained in a stable manner and in high purity as well as a method of manufacturing a carbon nanotube using the same are provided. The present invention relates to a catalyst structure for use in manufacturing a carbon nanotube by means of vapor deposition of crystalline carbon, having a catalytic material that forms a ring or a whirl on its crystal growth surface, and further relates to a method of manufacturing a carbon nanotube using the same. Preferably, the catalyst structure is a columnar body with its upper surface serving as the crystal growth surface, where at least part of the side of the columnar body has a non-catalytic material that has substantially no catalytic activity with respect to the growth of the crystalline carbon.
摘要翻译： 提供能够以稳定且高纯度获得具有所需形状和长度的碳纳米管的催化剂结构以及使用其制造碳纳米管的方法。 本发明涉及一种用于通过气相沉积结晶碳制造碳纳米管的催化剂结构，其具有在其晶体生长表面上形成环或旋转的催化材料，还涉及一种制造方法 碳纳米管。 优选地，催化剂结构是其上表面用作晶体生长表面的柱状体，其中柱状体的至少一部分侧面具有非催化材料，其相对于 结晶碳。
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24.发明申请APPARATUS FOR MANUFACTURING CARBON NANOSTRUCTURE AND METHOD FOR MANUFACTURING CARBON NANOSTRUCTURE 有权用于制造碳纳米结构的装置和制造碳纳米结构的方法公开(公告)号：US20130078177A1
公开(公告)日：2013-03-28
申请号：US13702710
申请日：2012-02-21
申请人： Takeshi Hikata , Soichiro Okubo
发明人： Takeshi Hikata , Soichiro Okubo
IPC分类号： C01B31/02
CPC分类号： C01B31/0206 , B01J4/001 , B01J19/087 , B01J23/745 , B01J35/0033 , B01J35/06 , B01J37/34 , B01J37/348 , B01J2208/00415 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/162 , Y10S977/891
摘要： An apparatus for manufacturing a carbon nanostructure and a method for manufacturing a carbon nanostructure that can achieve an increase in length and shape stabilization of the carbon nanostructure can be obtained. A manufacturing apparatus for a carbon nanostructure includes a catalyst member on which a carbon nanostructure is grown, a source gas supply unit and a source gas supply pipe, a coil, and a heater. The source gas supply unit and the source gas supply pipe supply the catalyst member with carbon for forming the carbon nanotube. The coil applies a gradient magnetic field (e.g., a cusped magnetic field indicated by magnetic flux line whose magnetic field strength gradually increases from one surface of the catalyst member to the other surface opposite to the one surface. The heater heats the catalyst member.
摘要翻译： 可以获得碳纳米结构体的制造装置和碳纳米结构体的制造方法，能够实现碳纳米结构的长度和形状的稳定化。 碳纳米结构体的制造装置包括生长碳纳米结构的催化剂构件，源气体供给单元和源气体供给管，线圈和加热器。 源气体供给单元和源气体供给管为催化剂构件供给形成碳纳米管的碳。 线圈施加梯度磁场（例如，磁场强度从催化剂部件的一个表面逐渐增加到与该一个表面相反的另一个表面的磁通线所表示的切割磁场，加热器加热催化剂部件。
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公开(公告)号：US07785558B2
公开(公告)日：2010-08-31
申请号：US11587212
申请日：2005-01-28
申请人： Takeshi Hikata
发明人： Takeshi Hikata
CPC分类号： C30B29/02 , B01J23/8906 , B01J23/8913 , B01J23/8993 , B01J35/06 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , Y10S977/742
摘要： The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
摘要翻译： 本发明涉及一种制造碳纳米结构的方法，所述碳纳米结构用于通过气相沉积从包括催化材料的催化剂基底的晶体生长表面生长结晶碳，特别涉及一种制造碳纳米结构的方法，其中至少两种气体 包括原料气体同时与催化底物接触。 优选地，至少两种气体由至少一种原料气体和至少一种载气构成。 优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。 优选地，原料气体含有离子，进一步优选含有碳离子。
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公开(公告)号：US20070224107A1
公开(公告)日：2007-09-27
申请号：US11587212
申请日：2005-01-28
申请人： Takeshi Hikata
发明人： Takeshi Hikata
CPC分类号： C30B29/02 , B01J23/8906 , B01J23/8913 , B01J23/8993 , B01J35/06 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , Y10S977/742
摘要： A method of manufacturing carbon nanostructures that allows carbon nanostructures having more uniform shape to be produced in high purity and in a stable manner is provided. The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by means of vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
摘要翻译： 提供一种制造碳纳米结构的方法，其允许以高纯度和稳定的方式制备具有更均匀形状的碳纳米结构。 本发明涉及一种通过从包括催化材料的催化底物的晶体生长表面进行气相沉积来生长结晶碳的碳纳米结构体的制造方法，特别涉及一种制造碳纳米结构的方法，其中至少 包括原料气体的两种气体同时与催化底物接触。 优选地，至少两种气体由至少一种原料气体和至少一种载气构成。 优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。 优选地，原料气体含有离子，进一步优选含有碳离子。
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公开(公告)号：US20060228548A1
公开(公告)日：2006-10-12
申请号：US11449939
申请日：2006-06-09
申请人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
发明人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
CPC分类号： H01R4/68 , H01F6/06 , H01L39/02 , Y10T428/2922 , Y10T428/2924 , Y10T428/2929 , Y10T428/2931 , Y10T428/2933 , Y10T428/2973 , Y10T428/2991
摘要： A method of manufacturing an oxide superconducting wire which can manufacture the longest possible wire by connecting relatively short wires with each other and is capable of suppressing reduction of a critical current resulting from influence by strain when the wires connected with each other are bent, an oxide superconducting wire, a superconducting coil and a superconducting apparatus are provided. According to the method of manufacturing an oxide superconducting wire by superposing end portions of two oxide superconducting wires with each other thereby bonding the end portions and connecting the oxide superconducting wires with each other, a junction formed by superposing the end portions with each other is so worked as to reduce the quantity of strain on an end of the junction when the two oxide superconducting wires and connected with each other are bent. Each of the oxide superconducting wire, the superconducting coil and the superconducting apparatus has the aforementioned junction, and the quantity of strain on the end of the junction is reduced in the aforementioned manner.
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公开(公告)号：US07132162B2
公开(公告)日：2006-11-07
申请号：US11003374
申请日：2004-12-06
申请人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
发明人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
IPC分类号： D02G3/40
CPC分类号： H01R4/68 , H01F6/06 , H01L39/02 , Y10T428/2922 , Y10T428/2924 , Y10T428/2929 , Y10T428/2931 , Y10T428/2933 , Y10T428/2973 , Y10T428/2991
摘要： A method of manufacturing an oxide superconducting wire which can manufacture the longest possible wire by connecting relatively short wires with each other and is capable of suppressing reduction of a critical current resulting from influence by strain when the wires connected with each other are bent, an oxide superconducting wire, a superconducting coil and a superconducting apparatus are provided. According to the method of manufacturing an oxide superconducting wire by superposing end portions of two oxide superconducting wires with each other thereby bonding the end portions and connecting the oxide superconducting wires with each other, a junction formed by superposing the end portions with each other is so worked as to reduce the quantity of strain on an end of the junction when the two oxide superconducting wires and connected with each other are bent. Each of the oxide superconducting wire, the superconducting coil and the superconducting apparatus has the aforementioned junction, and the quantity of strain on the end of the junction is reduced in the aforementioned manner.
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29.发明授权公开(公告)号：US06844064B1
公开(公告)日：2005-01-18
申请号：US09869701
申请日：2000-11-01
申请人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
发明人： Naoki Ayai , Ryosuke Hata , Hiromi Takei , Kazuhiko Hayashi , Takeshi Hikata
CPC分类号： H01R4/68 , H01F6/06 , H01L39/02 , Y10T428/2922 , Y10T428/2924 , Y10T428/2929 , Y10T428/2931 , Y10T428/2933 , Y10T428/2973 , Y10T428/2991
摘要： A method of manufacturing an oxide superconducting wire which can manufacture the longest possible wire by connecting relatively short wires with each other and is capable of suppressing reduction of a critical current resulting from influence by strain when the wires connected with each other are bent, an oxide superconducting wire, a superconducting coil and a superconducting apparatus are provided. According to the method of manufacturing an oxide superconducting wire by superposing end portions of two oxide superconducting wires (1, 2) with each other thereby bonding the end portions and connecting the oxide superconducting wires with each other, a junction (L) formed by superposing the end portions with each other is so worked as to reduce the quantity of strain on an end of the junction (L) when the two oxide superconducting wires (1) and (2) connected with each other are bent. Each of the oxide superconducting wire, the superconducting coil and the superconducting apparatus has the aforementioned junction (L), and the quantity of strain on the end of the junction (L) is reduced in the aforementioned manner.
摘要翻译： 一种制造氧化物超导线的方法，其可以通过相对短的线彼此连接来制造最长的线，并且当彼此连接的线弯曲时能够抑制由应变的影响引起的临界电流的减小，氧化物 超导线，超导线圈和超导装置。 根据通过将两个氧化物超导线（1,2）的端部彼此叠置从而结合端部并将氧化物超导线彼此连接来制造氧化物超导线的方法，通过叠加形成结（L） 当两个彼此连接的氧化物超导线（1）和（2）弯曲时，彼此的端部被加工成减小接合部（L）的端部上的应变量。 氧化物超导线，超导线圈和超导装置中的每一个具有上述结（L），并且以上述方式减小了结（L）端部上的应变量。
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公开(公告)号：US06641647B2
公开(公告)日：2003-11-04
申请号：US10182516
申请日：2002-07-30
IPC分类号： B01D5322
CPC分类号： B01D67/0072 , B01D71/02 , B01D71/022 , B01D2325/04 , C01B3/505 , Y10S55/05
摘要： A hydrogen permeable structure includes a base material (1) including porous ceramic, and a hydrogen permeable film (2) formed on the base material (1), including palladium (Pd) and at least one element other than palladium and having an amount of hydrogen dissolution at a prescribed temperature smaller than that of palladium alone. The hydrogen permeable film (2) is formed on the surface of the porous ceramic base by a physical vapor deposition technique after any pin holes in the surface of the base have been filled with a porous oxide material.
摘要翻译： 氢可渗透结构包括包括多孔陶瓷的基材（1）和形成在基材（1）上的氢可渗透膜（2），包括钯（Pd）和除钯以外的至少一种元素， 在比单独的钯小的规定温度下氢溶解。 在基底表面的任何针孔填充有多孔氧化物材料之后，通过物理气相沉积技术在多孔陶瓷基底的表面上形成氢可渗透膜（2）。
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