公开(公告)号：US20090212426A1

公开(公告)日：2009-08-27

申请号：US12389857

申请日：2009-02-20

申请人： Hiroshi Ishizeki ,  Masafumi Uehara

发明人： Hiroshi Ishizeki ,  Masafumi Uehara

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/76816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/0401 ,  H01L2224/05013 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05553 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05562 ,  H01L2224/05563 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/05687 ,  H01L2224/05688 ,  H01L2224/10125 ,  H01L2224/1146 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13028 ,  H01L2224/13144 ,  H01L2224/81201 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/00

摘要： In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.

摘要翻译： 在半导体器件中，当半导体器件安装时，可以有效地利用具有凸块的焊盘电极下方的区域，并且防止在凸块下方的半导体衬底局部地施加大量的力。 在半导体基板上形成第一层金属布线。 通过层间绝缘膜在第一层金属布线上形成焊盘电极。 焊盘电极通过形成在层间绝缘膜中的通孔与第一层金属布线连接。 在焊盘电极上形成保护膜。 保护膜具有露出焊盘电极的开口和形成在开口中的岛状保护膜。 通过保护膜中的开口与焊盘电极连接的Au凸块形成在焊盘电极上。 通孔形成在岛状保护膜下面，并且不完全填充有焊盘电极的一部分。

公开(公告)号：US06815284B2

公开(公告)日：2004-11-09

申请号：US10305394

申请日：2002-11-27

申请人： Masafumi Uehara ,  Shuichi Kikuchi ,  Masaaki Momen

发明人： Masafumi Uehara ,  Shuichi Kikuchi ,  Masaaki Momen

IPC分类号： H01L218238

CPC分类号： H01L29/66659 ,  H01L21/2652 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/42368 ,  H01L29/7835 ,  H01L29/7838

摘要： A manufacturing method of this invention has an ion-implantation process for threshold voltage adjustment of an MOS transistor, including a process to form a first well of an opposite conductivity type in a substrate of one conductivity type, to form a second well of the opposite conductivity type having higher impurity concentration than that in the first well, under a region where a thin gate insulation film is formed, to form gate insulation films on the first well and the second well, each having a different thickness, to ion-implant first impurities of the one conductivity type into the wells of the opposite conductivity type under the condition that the impurities penetrate the gate insulation films of different thicknesses and to ion-implant second impurities of the one conductivity type into the second well of the opposite conductivity type under the condition that the second impurities penetrate the thin gate insulation film but do not penetrate the thick gate insulation film. Thus the ion-implantation process for the threshold voltage adjustment of a semiconductor device having gate insulation films of different thicknesses can be rationalized with this invention.

摘要翻译： 本发明的制造方法具有用于MOS晶体管的阈值电压调整的离子注入工艺，包括在一种导电类型的衬底中形成相反导电类型的第一阱的工艺，以形成相反的第二阱 在形成薄栅极绝缘膜的区域下，在第一阱和第二阱中具有不同厚度的栅绝缘膜，首先在离子注入 一种导电类型的杂质在杂质穿透不同厚度的栅绝缘膜和将一种导电类型的第二杂质离子注入到相反导电类型的第二阱中的条件下进入相反导电类型的阱中 第二杂质穿透薄栅极绝缘膜但不穿透厚栅极绝缘膜的条件。 因此，通过本发明，可以使具有不同厚度的栅极绝缘膜的半导体器件的阈值电压调整的离子注入工艺合理化。

公开(公告)号：US5122438A

公开(公告)日：1992-06-16

申请号：US601388

申请日：1990-10-23

申请人： Akira Nogami ,  Masafumi Uehara ,  Kazuhiro Shimura

发明人： Akira Nogami ,  Masafumi Uehara ,  Kazuhiro Shimura

IPC分类号： G03F7/075 ,  G03F7/32

CPC分类号： G03F7/322 ,  G03F7/0752

摘要： A method of developing a waterless light-sensitive lithographic printing plate having a support and, provided thereon, a light-sensitive layer comprising a diazo resin and a silicone gum layer with a developer is disclosed. The developer comprises an organic carboxylic acid or salt thereof, water, and at least one of a sulfite and a surfactant.

公开(公告)号：US5089839A

公开(公告)日：1992-02-18

申请号：US561456

申请日：1990-08-01

申请人： Miegi Nakano ,  Minoru Seino ,  Masafumi Uehara ,  Akira Nogami

发明人： Miegi Nakano ,  Minoru Seino ,  Masafumi Uehara ,  Akira Nogami

IPC分类号： G03F7/00 ,  G03F7/30

CPC分类号： G03F7/3042

摘要： An apparatus for processing an imagewise exposed pre-sensitized lithographic printing plate which entails uniformly applying a desired amount of developer, that has not been substantially used to the surface of the printing plate by a developer supply member comprised of two plates and having a slit at the lowermost portion thereof which contacts the surface of the printing plate, and then transferring the plate containing the developer to a developer storage tank, immersing the plate in the developer storage tank, and removing the developer from the plate.

公开(公告)号：US4961859A

公开(公告)日：1990-10-09

申请号：US304805

申请日：1989-01-31

申请人： Masafumi Uehara ,  Akira Nogami ,  Kazuhiro Shimura ,  Keiichi Yumiki ,  Akio Iwaki

发明人： Masafumi Uehara ,  Akira Nogami ,  Kazuhiro Shimura ,  Keiichi Yumiki ,  Akio Iwaki

IPC分类号： C02F1/04 ,  C02F1/36 ,  C02F1/38 ,  C02F1/52 ,  C02F1/56 ,  C02F1/66 ,  C02F9/00

CPC分类号： C02F1/048 ,  C02F9/00 ,  C02F1/36 ,  C02F1/38 ,  C02F1/5236 ,  C02F1/56 ,  C02F1/66 ,  C02F2103/40

摘要： A method and a device of dividing an aqueous processing waste solution of a non-silver halide light-sensitive material into solid and water are disclosed comprising the steps of:(a) introducing said solution into an evaporator,(b) concentrating by heating said solution,(c) removing sludge produced from the evaporator during concentrating by heating said solution,(d) separating the sludge into solid and liquid and(e) cooling and condensing evaporated gas to liquid.

公开(公告)号：US4285727A

公开(公告)日：1981-08-25

申请号：US103609

申请日：1979-12-14

申请人： Masafumi Uehara ,  Mitsuyoshi Itano

发明人： Masafumi Uehara ,  Mitsuyoshi Itano

IPC分类号： C09D11/00

CPC分类号： C09D11/30

摘要： An ink composition for ink jet recording is disclosed which contains a water soluble dye, polyhydric alcohol, and potassium carbonate in an aqueous medium.

摘要翻译： 公开了一种用于喷墨记录的油墨组合物，其在水性介质中含有水溶性染料，多元醇和碳酸钾。