公开(公告)号：US20220314373A1

公开(公告)日：2022-10-06

申请号：US17627700

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hirotoshi MORI ,  Yohei YAMASHITA ,  Hayato TANOUE

IPC: B23K26/53 ,  B23K26/06

Abstract: A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers; and a controller. The controller controls an operation of forming the internal modification layers such that the internal modification layers are formed in a spiral shape from a diametrically outer side of the processing target object toward a diametrically inner side thereof, and such that an eccentric amount between the holder and the processing target object held by the holder in the forming of the internal modification layers toward the diametrically inner side of the processing target object becomes smaller than the eccentric amount in forming the internal modification layers toward the diametrically outer side of the processing target object.

公开(公告)号：US20220223475A1

公开(公告)日：2022-07-14

申请号：US17595658

申请日：2020-05-11

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/67 ,  H01L21/306

Abstract: A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.

公开(公告)号：US20220184743A1

公开(公告)日：2022-06-16

申请号：US17598339

申请日：2020-03-02

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE

IPC: B23K26/36 ,  B23K26/03 ,  B23K26/08 ,  B23K26/073 ,  B23K26/082 ,  B23K26/06 ,  B23K26/16

Abstract: A substrate processing system includes a laser processing apparatus including a holder and a radiation unit, the holder being configured to hold a substrate including a base substrate, an irregularity pattern formed on a main surface of the base substrate, and an irregularity layer formed along the irregularity pattern, the radiation unit being configured to radiate a laser beam to a protrusion of the irregularity layer to flatten the irregularity layer by removing the protrusion in a state that the substrate is held by the holder; a controller configured to control a position of an irradiation point of the laser beam; and a polishing apparatus configured to polish the irregularity layer in which the protrusion is removed with the laser beam to be flattened.

公开(公告)号：US20220181157A1

公开(公告)日：2022-06-09

申请号：US17594456

申请日：2020-04-07

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Hirotoshi MORI

IPC: H01L21/268 ,  H01L21/324

Abstract: A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form, in the forming of the modification layers, a first modification layer formation region in which cracks that develop from neighboring modification layers along the plane direction are not connected, and also controls the modifying device to form, in the forming of the modification layers, a second modification layer formation region in which cracks that develop from neighboring modification layers along the plane direction are connected.

公开(公告)号：US20250095995A1

公开(公告)日：2025-03-20

申请号：US18961960

申请日：2024-11-27

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  B23K26/53 ,  B23K103/00 ,  B24B7/22 ,  H01L21/304

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

公开(公告)号：US20240355669A1

公开(公告)日：2024-10-24

申请号：US18689484

申请日：2022-08-26

Applicant: Tokyo Electron Limited

Inventor： Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/76243 ,  H01L21/30625 ,  H01L21/67092 ,  H01L21/76254

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A device layer including multiple devices is formed on a front surface side of the first substrate. The substrate processing method includes forming a light leakage prevention layer by radiating first laser light to an oxygen-containing film formed between the device layer and a position where a modification layer serving as a starting point for separation of the first substrate is formed; forming the modification layer by radiating second laser light to an inside of the first substrate after the forming of the light leakage prevention layer; and separating the first substrate starting from the modification layer to thin the first substrate.

公开(公告)号：US20240312804A1

公开(公告)日：2024-09-19

申请号：US18261507

申请日：2022-01-04

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/268 ,  H01L21/76254

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light in a pulse shape to a laser absorbing layer formed between the first substrate and the second substrate; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller sets an interval of the laser light radiated to the laser absorbing layer based on a thickness of the laser absorbing layer.

公开(公告)号：US20240153822A1

公开(公告)日：2024-05-09

申请号：US18549610

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/67092 ,  H01L21/6836

Abstract: A semiconductor chip manufacturing method includes (A) to (E) described below. (A) preparing a stacked substrate including a first semiconductor substrate, a device layer, a separation layer, and a third semiconductor substrate in this order. (B) dicing the first semiconductor substrate, the device layer, and the separation layer. (C) attaching the diced stacked substrate to a tape from an opposite side to the third semiconductor substrate, and mounting the diced stacked substrate to a frame with the tape therebetween. (D) radiating, after mounting the stacked substrate to the frame, a laser beam penetrating the third semiconductor substrate to the separation layer to form a modification layer at an interface between the third semiconductor substrate and the separation layer, or at an inside of the separation layer. (E) separating the third semiconductor substrate and the separation layer starting from the modification layer.

公开(公告)号：US20240079403A1

公开(公告)日：2024-03-07

申请号：US18261898

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Yoshihisa MATSUBARA ,  Yoshihiro TSUTSUMI ,  Yohei YAMASHITA

IPC: H01L25/00 ,  H01L21/304 ,  H01L21/67 ,  H01L21/683 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6835 ,  H01L25/0652 ,  H01L2221/68309 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: A method of manufacturing a substrate with chips includes the following (A) and (B):



(A) preparing a stacked substrate, the stacked substrate including: a plurality of chips; a first substrate to which the plurality of chips are temporarily bonded; and a second substrate bonded to the first substrate via the plurality of chips; and
(B) separating the plurality of chips bonded to the first substrate and the second substrate, from the first substrate, in order to bond the plurality of chips to one surface of a third substrate including a device layer.




In this method, the first substrate, from which the plurality of chips are separated, includes alignment marks that are used to ensure alignment when the first substrate and the plurality of chips are bonded together, or that are used to measure misalignment after the first substrate and the plurality of chips are bonded together.

公开(公告)号：US20240071765A1

公开(公告)日：2024-02-29

申请号：US18261518

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: H01L21/268

CPC classification number: H01L21/268

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate, an interface layer including at least a laser absorbing film, and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; an interface laser radiating unit configured to radiate laser light to the laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the interface laser radiating unit relative to each other; and a controller. The controller performs a control of acquiring information of the interface layer formed in the combined substrate, and a control of setting, based on the acquired information of the interface layer, a bonding interface having a weakest adhesive strength among bonding interfaces in the interface layer as a separation interface between the first substrate and the second substrate.