公开(公告)号：US06805808B2

公开(公告)日：2004-10-19

申请号：US10129925

申请日：2002-05-13

申请人： Satoshi Fujii ,  Noboru Gotou ,  Tomoki Uemura ,  Toshiaki Saka ,  Katsuhiro Itakura

发明人： Satoshi Fujii ,  Noboru Gotou ,  Tomoki Uemura ,  Toshiaki Saka ,  Katsuhiro Itakura

IPC分类号： H01L21301

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/30 ,  B23K2103/50

摘要： A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.

公开(公告)号：US06525235B2

公开(公告)日：2003-02-25

申请号：US09965822

申请日：2001-10-01

申请人： Shingo Yoshida ,  Masahiro Motoyuki ,  Tomoki Uemura ,  Koji Yamamoto

发明人： Shingo Yoshida ,  Masahiro Motoyuki ,  Tomoki Uemura ,  Koji Yamamoto

IPC分类号： C07C714

CPC分类号： C07C7/14 ,  C07C15/24

摘要： The present invention provides a method for manufacturing a highly pure 2,6-dimethylnaphthalene having a purity of 99% or more even when a mixture of dimethylnaphthalene isomers containing 5 wt % or more of 2,7-dimethylnaphthalate is used as a feedstock. The method for manufacturing 2,6-dimethylnaphthalene comprises a step of performing crystallization and solid-liquid separation of a liquid primarily containing dimethylnaphthalene isomers so that the liquid is separated into a cake containing the dimethylnaphthalene isomers and a mother liquor, and a step of performing separation/purification of the cake. In the method described above, the crystallization and the solid-liquid separation are performed under the condition in which the ratio of the content of 2,6-dimethylnaphthalene in the mother liquor to that of 2,7-dimethylnaphthalene therein is not less than 1 so that the content of 2,6-dimethylnaphthalene in the cake is 60% or more and that the content of 2,7-dimethylnaphthalene therein is 6.5% or less. As a result, a highly pure 2,6-dimethylnaphthalene is obtained by performing the separation/purification of the cake.

公开(公告)号：US20130153368A1

公开(公告)日：2013-06-20

申请号：US13820263

申请日：2011-08-31

申请人： Osamu Tsuge ,  Tomoki Uemura

发明人： Osamu Tsuge ,  Tomoki Uemura

IPC分类号： B65G27/00

CPC分类号： B65G27/00 ,  C21B13/0053 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D2003/0004

摘要： Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.

摘要翻译： 不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。 用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成 材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部， 设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

公开(公告)号：US20100322841A1

公开(公告)日：2010-12-23

申请号：US12864874

申请日：2008-12-24

申请人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

发明人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC分类号： C30B23/02 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

摘要翻译： 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US20090127664A1

公开(公告)日：2009-05-21

申请号：US12273179

申请日：2008-11-18

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L31/20 ,  H01L29/20

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上 成长。 第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。

公开(公告)号：US20090127663A1

公开(公告)日：2009-05-21

申请号：US12273137

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20 ,  H01L21/322

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：通过使用四氟化硅气体作为掺杂气体，通过气相生长在底层衬底上生长掺杂有硅的III族氮化物半导体晶体。

公开(公告)号：US20090127662A1

公开(公告)日：2009-05-21

申请号：US12273101

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·m and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体衬底的电阻率至少为1×10 -4Ω·cm且不大于0.1Ω·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US08915352B2

公开(公告)日：2014-12-23

申请号：US13820263

申请日：2011-08-31

申请人： Osamu Tsuge ,  Tomoki Uemura

发明人： Osamu Tsuge ,  Tomoki Uemura

IPC分类号： B65G27/00 ,  C21B13/00 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D3/00

CPC分类号： B65G27/00 ,  C21B13/0053 ,  C21B13/10 ,  F27B9/16 ,  F27B9/38 ,  F27D2003/0004

摘要： Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.

摘要翻译： 不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。 用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成 材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部， 设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

公开(公告)号：US08698282B2

公开(公告)日：2014-04-15

申请号：US12273101

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US20100164070A1

公开(公告)日：2010-07-01

申请号：US12719719

申请日：2010-03-08

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。