公开(公告)号：US06909130B2

公开(公告)日：2005-06-21

申请号：US10704552

申请日：2003-11-12

申请人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.

摘要翻译： MTJ元件的记录层通过使用高结晶磁性各向异性材料构成。 用于将数据写入MTJ元件的写入线被磁性层覆盖，并且写入布线和磁性层彼此交换耦合。 在与MTJ元件和记录层的记录层相对的部分处的磁性层的磁体积的总和设定为小于任何其它部分的磁性层的磁性体积。

公开(公告)号：US06879515B2

公开(公告)日：2005-04-12

申请号：US10926047

申请日：2004-08-26

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US20050024930A1

公开(公告)日：2005-02-03

申请号：US10926047

申请日：2004-08-26

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US06797536B2

公开(公告)日：2004-09-28

申请号：US10767997

申请日：2004-02-02

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： H01L2100

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US06960815B2

公开(公告)日：2005-11-01

申请号：US10379656

申请日：2003-03-06

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US08872738B2

公开(公告)日：2014-10-28

申请号：US13238339

申请日：2011-09-21

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

IPC分类号： G09G3/30 ,  H01L27/12 ,  G09G3/32

CPC分类号： H01L27/1225 ,  G09G3/3233 ,  G09G2300/0408 ,  G09G2300/08

摘要： According to one embodiment, a display device includes an insulating layer, a display unit, and an organic EL layer. The display unit is provided on a major surface of the insulating layer and includes a plurality of gate lines, a plurality of signal lines, a plurality of power source lines and a plurality of pixel units arranged in a matrix configuration. The EL layer is provided on the display unit. Each pixel unit includes a drive transistor and a resistor. The drive transistor includes a drive gate electrode, a drive source electrode, and a drive drain electrode. The drive source electrode or the drive drain electrode is connected to one of the power source lines. An end of the resistor is connected to the drive gate electrode. An other end of the resistor is connected to one of the gate line, the signal line, and the power source line.

摘要翻译： 根据一个实施例，显示装置包括绝缘层，显示单元和有机EL层。 显示单元设置在绝缘层的主表面上，并且包括多个栅极线，多个信号线，多个电源线和以矩阵构造布置的多个像素单元。 EL层设置在显示单元上。 每个像素单元包括驱动晶体管和电阻器。 驱动晶体管包括驱动栅电极，驱动源电极和驱动漏电极。 驱动源极或驱动漏极连接到电源线之一。 电阻器的一端连接到驱动栅电极。 电阻器的另一端连接到栅极线，信号线和电源线之一。

公开(公告)号：US20120132909A1

公开(公告)日：2012-05-31

申请号：US13365730

申请日：2012-02-03

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L33/08

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US20120075260A1

公开(公告)日：2012-03-29

申请号：US13051201

申请日：2011-03-18

申请人： Nobuyoshi SAITO ,  Yujiro Hara ,  Tomomasa Ueda ,  Shintaro Nakano ,  Kentaro Miura

发明人： Nobuyoshi SAITO ,  Yujiro Hara ,  Tomomasa Ueda ,  Shintaro Nakano ,  Kentaro Miura

IPC分类号： G09G5/00

CPC分类号： G09G3/3225 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045

摘要： According to one embodiment, an active-matrix organic EL display device includes a display region and a peripheral region. The display region includes a plurality of pixels disposed in a matrix configuration. The peripheral region includes a drive circuit. The pixel includes a bottom gate-type first transistor, a cathode electrode, an anode electrode, and an organic EL layer provided between the cathode electrode and the anode electrode. The drive circuit includes a bottom gate-type second transistor and a back gate electrode provided on the second transistor. A gate potential of the first transistor is lower than a potential of the cathode electrode when the pixel displays a minimum luminance.

摘要翻译： 根据一个实施例，有源矩阵有机EL显示装置包括显示区域和周边区域。 显示区域包括以矩阵构造布置的多个像素。 外围区域包括驱动电路。 像素包括底栅型第一晶体管，阴极电极，阳极电极和设置在阴极电极和阳极电极之间的有机EL层。 驱动电路包括底栅型第二晶体管和设置在第二晶体管上的背栅电极。 当像素显示最小亮度时，第一晶体管的栅极电位低于阴极电位。

公开(公告)号：US20090079725A1

公开(公告)日：2009-03-26

申请号：US12210516

申请日：2008-09-15

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Yujiro Hara

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Yujiro Hara

IPC分类号： G06F3/038

CPC分类号： G09G3/3233 ,  G09G2300/0852 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2320/043

摘要： A display device includes: a drive circuit supplying a first signal voltage and a first reverse bias in a first frame time period, and supplying a second signal voltage and a second reverse bias in a second frame time period subsequent to the first frame time period; a first drive TFT receiving the first signal voltage to supply a first drive current based on the first signal voltage in the first frame time period, and receiving the second reverse bias in the second frame time period; a second drive TFT receiving the first reverse bias in the first frame time period, and receiving the second signal voltage to supply a second drive current based on the second signal voltage in the second frame time period; and a display element emitting light based on the first drive current in the first frame time period and emitting light based on the second drive current in the second frame time period.

摘要翻译： 显示装置包括：驱动电路，在第一帧时间段内提供第一信号电压和第一反向偏置，并且在第一帧时间段之后的第二帧时间段内提供第二信号电压和第二反向偏置; 第一驱动TFT接收第一信号电压，以在第一帧时间段内基于第一信号电压提供第一驱动电流，以及在第二帧时间段中接收第二反向偏置; 在第一帧时间段中接收第一反向偏置的第二驱动TFT，并且在第二帧时间段中基于第二信号电压接收第二信号电压以提供第二驱动电流; 以及显示元件，其基于第一帧时间段中的第一驱动电流发光，并且在第二帧时间段中基于第二驱动电流发光。

公开(公告)号：US06717845B2

公开(公告)日：2004-04-06

申请号：US10345253

申请日：2003-01-16

申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

IPC分类号： G11C1115

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。