公开(公告)号：US20240310459A1

公开(公告)日：2024-09-19

申请号：US18350584

申请日：2023-07-11

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01R33/07 ,  G01R33/00 ,  G01R33/09

CPC classification number: G01R33/075 ,  G01R33/0052 ,  G01R33/093

Abstract: The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

公开(公告)号：US20240144960A1

公开(公告)日：2024-05-02

申请号：US18226625

申请日：2023-07-26

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Rohan Babu NAGABHIRAVA ,  Xiaoyong LIU ,  Brian R. YORK ,  Son T. LE ,  Cherngye HWANG ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/11 ,  G11B5/31

CPC classification number: G11B5/11 ,  G11B5/3116

Abstract: The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.

公开(公告)号：US20240087785A1

公开(公告)日：2024-03-14

申请号：US17944516

申请日：2022-09-14

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  James Mac FREITAG ,  Yuankai ZHENG ,  Brian R. YORK

IPC: H01F10/32 ,  G01R33/09 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01F10/3272 ,  G01R33/093 ,  G01R33/098 ,  H01L27/222 ,  H01L43/10 ,  G11B5/3906

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.

公开(公告)号：US20240032437A1

公开(公告)日：2024-01-25

申请号：US18197495

申请日：2023-05-15

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Susumu OKAMURA ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC: H10N50/10 ,  H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  G01R33/09 ,  G11B5/39

CPC classification number: H10N50/10 ,  H10N50/85 ,  G11C11/161 ,  H10B61/00 ,  G01R33/093 ,  G11B5/3909

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.

公开(公告)号：US20230306993A1

公开(公告)日：2023-09-28

申请号：US17705147

申请日：2022-03-25

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Brian R. YORK ,  Xiaoyong LIU ,  Son T. LE ,  Cherngye HWANG ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Kuok San HO ,  Hisashi TAKANO ,  Julian SASAKI ,  Huy H. HO ,  Khang H. D. NGUYEN ,  Nam Hai PHAM

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B2005/3996 ,  G11B2005/0021

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

公开(公告)号：US20230047223A1

公开(公告)日：2023-02-16

申请号：US17401856

申请日：2021-08-13

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Michael GRIBELYUK ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC: H01F10/32 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11B5/39

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

公开(公告)号：US20220013138A1

公开(公告)日：2022-01-13

申请号：US17395306

申请日：2021-08-05

Applicant: Western Digital Technologies, Inc.

Inventor： Cherngye HWANG ,  Xiaoyong LIU ,  Quang LE ,  Kuok San HO ,  Hisashi TAKANO ,  Brian R. YORK

IPC: G11B5/31 ,  G11B5/11

Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

公开(公告)号：US20250054671A1

公开(公告)日：2025-02-13

申请号：US18933330

申请日：2024-10-31

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC: H01F10/32 ,  C23C8/12 ,  C30B29/52 ,  G11B5/00 ,  G11B5/39 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

公开(公告)号：US20250014618A1

公开(公告)日：2025-01-09

申请号：US18889747

申请日：2024-09-19

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Randy G. SIMMONS ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO ,  Michael A. GRIBELYUK ,  Xiaoyu XU

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.

公开(公告)号：US20250014595A1

公开(公告)日：2025-01-09

申请号：US18893605

申请日：2024-09-23

Applicant: Western Digital Technologies, Inc.

Inventor： Xiaoyong LIU ,  Zhanjie LI ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/39 ,  G11B5/11

Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.