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32 条记录 (耗时 0.033 秒)

    Multilayer device and method of making
    21.
    发明授权
    Multilayer device and method of making 有权
    多层设备及其制作方法

    公开(公告)号：US07595105B2

    公开(公告)日：2009-09-29

    申请号：US11420366

    申请日：2006-05-25

    申请人： Min Yan ,  Anil Raj Duggal ,  Marc Schaepkens ,  Tae Won Kim

    发明人： Min Yan ,  Anil Raj Duggal ,  Marc Schaepkens ,  Tae Won Kim

    IPC分类号： B32B7/00 ,  B32B7/02 ,  B32B15/08 ,  B32B18/00 ,  B32B27/06

    CPC分类号： H01L51/00 ,  G02F1/133305 ,  H01L51/0097 ,  H01L51/5253 ,  H01L2251/5338 ,  Y10S428/918 ,  Y10T428/24942 ,  Y10T428/31507 ,  Y10T428/31678

    摘要： The invention relates to composite articles comprising a substrate and additional layers on the substrate. According to one example, the layers are selected so that the difference in the coefficient of thermal expansion (CTE) between the substrate and a first layer on one side of the substrate is substantially equal to the CTE difference between the substrate and a second layer on the other side of the substrate. The stress caused by the CTE difference and/or shrinkage on one side of the substrate during heating or cooling is balanced by the stress caused by the CTE difference on the other side of the substrate during heating or cooling. Such stress balancing can reduce or minimize curling of the substrate.

    摘要翻译： 本发明涉及包含基底和在基底上的附加层的复合制品。 根据一个示例，选择这些层，使得衬底与衬底的一侧上的第一层之间的热膨胀系数（CTE）的差异基本上等于衬底和第二层之间的CTE差 衬底的另一面。 在加热或冷却期间由基板的一侧的CTE差异和/或收缩引起的应力由加热或冷却期间基板另一侧的CTE差异引起的应力平衡。 这种应力平衡可以减少或最小化衬底的卷曲。

    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES
    23.
    发明申请
    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES 有权
    具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统

    公开(公告)号：US20080197110A1

    公开(公告)日：2008-08-21

    申请号：US11677472

    申请日：2007-02-21

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

    摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

    摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

    Data control system in CDMA mobile communication system
    25.
    发明授权
    Data control system in CDMA mobile communication system 失效
    CDMA移动通信系统中的数据控制系统

    公开(公告)号：US6038224A

    公开(公告)日：2000-03-14

    申请号：US978619

    申请日：1997-11-26

    申请人： Tae Won Kim ,  Byung Keun Lim

    发明人： Tae Won Kim ,  Byung Keun Lim

    IPC分类号： H04W76/02 ,  H04W88/14 ,  H04W92/02 ,  H04W92/24 ,  H04B7/216

    CPC分类号： H04W76/02 ,  H04W88/14 ,  H04W92/02 ,  H04W92/24

    摘要： A data control system in a CDMA mobile communication system can achieve data communication with a public network subscriber, even if a modem is not mounted on a computer of a mobile telephone subscriber, and simultaneously minimize data transmission error rate even in an irregular environment of radio data transmitting/receiving sections between a mobile telephone and a radio base station.

    摘要翻译： CDMA移动通信系统中的数据控制系统即使调制解调器没有安装在移动电话用户的计算机上，也可以实现与公共网络用户的数据通信，并且即使在无线电的不规则环境中也同时使数据传输错误率最小化 在移动电话和无线电基站之间的数据发送/接收部分。

    Foldable emergency road sign
    26.
    发明授权
    Foldable emergency road sign 有权

    公开(公告)号：US09718401B2

    公开(公告)日：2017-08-01

    申请号：US14443610

    申请日：2013-11-28

    申请人： Tae Won Kim

    发明人： Tae Won Kim

    IPC分类号： B60Q7/00

    CPC分类号： B60Q7/00

    摘要： Disclosed herein is a foldable emergency road sign which includes a bar-shaped handle, a hollow shaft connected to the bar-shaped handle, a spring pipe, the spring pipe having a hole through which the hollow shaft is inserted, a plurality of bodies connected to the spring pipe, wherein the plurality of bodies can be folded or unfolded to have a triangular pyramid shape or a quadrangular pyramid shape, and a light emitting unit attached at regular intervals to one side of the plurality of bodies.

    Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
    28.
    发明授权
    Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures 有权
    具有脉冲反应气体的脉冲等离子体系统补充用于蚀刻半导体结构

    公开(公告)号：US07771606B2

    公开(公告)日：2010-08-10

    申请号：US11678047

    申请日：2007-02-22

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorow ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorow ,  Shashank C. Deshmukh

    IPC分类号： B44C1/22 ,  C03C25/68 ,  C03C15/00 ,  C23F1/00

    CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/31116

    摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.

    摘要翻译： 描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。 在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。 脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。 等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。 在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。 然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。

    "> METHODS TO ELIMINATE
    29.
    发明申请
    METHODS TO ELIMINATE "M-SHAPE" ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR 有权
    消除电感耦合等离子体反应器中“M形”蚀刻速率曲线的方法

    公开(公告)号：US20080264904A1

    公开(公告)日：2008-10-30

    申请号：US11739428

    申请日：2007-04-24

    申请人： STEPHEN YUEN ,  Kyeong-Tae Lee ,  Valentin Todorow ,  Tae Won Kim ,  Anisul Khan ,  Shashank Deshmukh

    发明人： STEPHEN YUEN ,  Kyeong-Tae Lee ,  Valentin Todorow ,  Tae Won Kim ,  Anisul Khan ,  Shashank Deshmukh

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/321

    摘要： An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.

    摘要翻译： 电感耦合等离子体处理室具有带天花板的室。 第一和第二天线放置在天花板附近。 第一天线与第二天线同心。 等离子体源电源耦合到第一和第二天线。 等离子体源电源向第一天线产生第一RF功率，并向第二天线产生第二RF功率。 设置在室内的衬底支撑件。 第一天线的尺寸和衬底支撑件之间的距离使得衬底支撑件上的衬底的蚀刻速率基本上是均匀的。