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1.发明申请PULSED-PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES 有权具有脉冲反应气体的脉冲等离子体系统用于蚀刻半导体结构公开(公告)号：US20080206901A1
公开(公告)日：2008-08-28
申请号：US11678047
申请日：2007-02-22
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/31116
摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.
摘要翻译： 描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。 在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。 脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。 等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。 在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。 然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。
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公开(公告)号：US20080206900A1
公开(公告)日：2008-08-28
申请号：US11678041
申请日：2007-02-22
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译： 描述了用于蚀刻半导体结构的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 占空比的导通状态具有足够短的持续时间，从而基本上抑制了与样品相邻的反应区域中的微负荷，同时占空比的关闭状态持续足够长，从而基本上能够去除一组 蚀刻来自反应区域的副产物。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。
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3.发明授权Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures 有权具有脉冲反应气体的脉冲等离子体系统补充用于蚀刻半导体结构公开(公告)号：US07771606B2
公开(公告)日：2010-08-10
申请号：US11678047
申请日：2007-02-22
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/31116
摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.
摘要翻译： 描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。 在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。 脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。 等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。 在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。 然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。
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公开(公告)号：US07737042B2
公开(公告)日：2010-06-15
申请号：US11678041
申请日：2007-02-22
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译： 描述了用于蚀刻半导体结构的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 占空比的导通状态具有足够短的持续时间，从而基本上抑制了与样品相邻的反应区域中的微负荷，同时占空比的关闭状态持续足够长，从而基本上能够去除一组 蚀刻来自反应区域的副产物。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。
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5.发明授权Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates 有权具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统公开(公告)号：US07718538B2
公开(公告)日：2010-05-18
申请号：US11677472
申请日：2007-02-21
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32009 , H01L21/3065 , H01L21/32137
摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。
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6.发明申请PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES 有权具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统公开(公告)号：US20080197110A1
公开(公告)日：2008-08-21
申请号：US11677472
申请日：2007-02-21
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32009 , H01L21/3065 , H01L21/32137
摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。
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公开(公告)号：US20090061544A1
公开(公告)日：2009-03-05
申请号：US11948030
申请日：2007-11-30
申请人： JOHN P. HOLLAND , John M. Yamartino , Thorsen B. Lill , Meihua Shen , Alexander Paterson , Valentin N. Todorow
发明人： JOHN P. HOLLAND , John M. Yamartino , Thorsen B. Lill , Meihua Shen , Alexander Paterson , Valentin N. Todorow
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01L22/26
摘要： A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories.
摘要翻译： 根据控制等离子体处理的参数的启动和停止值的轨迹控制等离子体处理的方法，例如供应的气体流量和功率以产生等离子体。 轨迹可以基于包括至少时间作为变量的方程式。 在处理期间的设定时间，根据预定的轨迹更新参数的值。 与室相关联的传感器还可以调整轨迹，向等式提供变量，和/或定义轨迹。
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8.发明授权Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density 有权使用可变频电容耦合源的双等离子体源处理来控制等离子体离子密度公开(公告)号：US07727413B2
公开(公告)日：2010-06-01
申请号：US11410717
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
IPC分类号： G01L21/30
CPC分类号： H01J37/321 , H01J37/32091 , H01J37/32165
摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.
摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。
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9.发明授权Plasma reactor apparatus with independent capacitive and toroidal plasma sources 失效具有独立电容和环形等离子体源的等离子体反应器装置公开(公告)号：US07264688B1
公开(公告)日：2007-09-04
申请号：US11411163
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
CPC分类号： H01J37/32935 , H01J37/321
摘要： A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.
摘要翻译： 等离子体反应器包括具有RF功率施加器的环形等离子体源，RF发生器耦合到RF功率施加器。 反应器还包括在天花板或工件支撑件处的电容耦合的等离子体源功率施加器或电极，耦合到电容耦合的源功率施加器的VHF发电机，工件支架中的等离子体偏置功率施加器或电极，以及RF偏置 发电机耦合到等离子体偏置功率施加器。 控制器调节通过环形等离子体源和电容耦合的等离子体源功率施加器同时耦合到腔室和管道中的等离子体的功率的相对量。
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10.发明授权Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency 有权具有可变频率的VHF电容耦合等离子体源的等离子体反应器装置公开(公告)号：US07645357B2
公开(公告)日：2010-01-12
申请号：US11410697
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.
摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。
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