公开(公告)号：US06649942B2

公开(公告)日：2003-11-18

申请号：US10150930

申请日：2002-05-21

申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/14 ,  H01L33/38

摘要： A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.

公开(公告)号：US20110211609A1

公开(公告)日：2011-09-01

申请号：US13100720

申请日：2011-05-04

申请人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/00 ,  H01L33/62

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US20090046755A1

公开(公告)日：2009-02-19

申请号：US12256854

申请日：2008-10-23

申请人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/026

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹陷部分的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US20080067541A1

公开(公告)日：2008-03-20

申请号：US11928185

申请日：2007-10-30

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US20060222036A1

公开(公告)日：2006-10-05

申请号：US11393891

申请日：2006-03-31

申请人： Tsutomu Yamaguchi ,  Masayuki Hata ,  Takashi Kano ,  Masayuki Shono ,  Hiroki Ohbo ,  Yasuhiko Nomura ,  Hiroaki Izu

发明人： Tsutomu Yamaguchi ,  Masayuki Hata ,  Takashi Kano ,  Masayuki Shono ,  Hiroki Ohbo ,  Yasuhiko Nomura ,  Hiroaki Izu

IPC分类号： H01S5/00 ,  H01S3/06 ,  H01S3/07

CPC分类号： H01S5/30 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/00

摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

公开(公告)号：US06890779B2

公开(公告)日：2005-05-10

申请号：US10936499

申请日：2004-09-09

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/285 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US20050029539A1

公开(公告)日：2005-02-10

申请号：US10936499

申请日：2004-09-09

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/285 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/343

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US06791120B2

公开(公告)日：2004-09-14

申请号：US10394260

申请日：2003-03-24

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L2924

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US07629623B2

公开(公告)日：2009-12-08

申请号：US12139807

申请日：2008-06-16

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L27/15 ,  H01L29/40

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US07512167B2

公开(公告)日：2009-03-31

申请号：US11219875

申请日：2005-09-07

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。